公开(公告)号：US06872329B2

公开(公告)日：2005-03-29

申请号：US09842476

申请日：2001-04-25

Applicant: Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker ,  Shijian Li

IPC: B24B37/04 ,  C09G1/02 ,  H01L21/321 ,  C09K13/00 ,  C09K13/04 ,  C09K13/06 ,  H01L21/302

CPC classification number: H01L21/3212 ,  B24B37/044 ,  C09G1/02

Abstract: A method and composition for planarizing a substrate surface is provided. The polishing composition includes an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal and a stabilizer such as a stannate salt. The composition may further include abrasive particles and/or inhibitors. The composition may be used in a multi-step polishing process including polishing a substrate surface to selectively remove a metal layer with respect to a barrier layer and dielectric layer and polishing a substrate surface using the composition to non-selectively remove the metal layer, a barrier layer, and a dielectric layer from the substrate surface.

Abstract translation: 提供了用于平坦化基板表面的方法和组合物。 抛光组合物包括能够氧化经历平坦化的金属并产生与氧化金属络合的络合剂和稳定剂如锡酸盐的氧化剂。 组合物还可以包括研磨颗粒和/或抑制剂。 组合物可以用于多步抛光工艺中，包括抛光衬底表面以相对于阻挡层和电介质层选择性去除金属层，并使用该组合物抛光衬底表面以非选择性地去除金属层， 阻挡层和介电层。

公开(公告)号：US06960521B2

公开(公告)日：2005-11-01

申请号：US10939750

申请日：2004-09-13

Applicant: Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

Inventor： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

IPC: B24B1/00 ,  B24B5/00 ,  B24B29/00 ,  B24B37/04 ,  C23F1/00 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768

CPC classification number: H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Abstract translation: 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光设备中，其中所述载体头包括保持环和 用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电 材料。

公开(公告)号：US06537144B1

公开(公告)日：2003-03-25

申请号：US09505899

申请日：2000-02-17

Applicant: Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24D1100

CPC classification number: B24B37/26 ,  B24B53/017 ,  H01L21/3212

Abstract: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06520840B1

公开(公告)日：2003-02-18

申请号：US09692723

申请日：2000-10-19

Applicant: Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: C09K3/1463 ,  C09G1/02

Abstract: A CMP slurry is formulated with an oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. The slurry may further include abrasive particles, inhibitors, pH adjusting agents, and combinations thereof.

Abstract translation: 用能够氧化经历平坦化的金属的氧化剂配制CMP浆料，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 浆料还可包括磨料颗粒，抑制剂，pH调节剂及其组合。

公开(公告)号：US06783432B2

公开(公告)日：2004-08-31

申请号：US09874177

申请日：2001-06-04

Applicant: Jui-Lung Li ,  Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Jui-Lung Li ,  Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: B24B37/0056 ,  B24B37/044 ,  C09G1/02

Abstract: A method and composition for planarizing a substrate. The composition includes a pressure sensitive solution and one or more chemical agents for complexing with a metal or oxidized metal. The method for removal of a copper containing layer from a substrate surface, comprising applying a composition to a polishing media, the composition comprising a pressure sensitive solution, and one or more chemical agents for complexing with a metal or oxidized metal, and polishing the substrate surface with the polishing media.

Abstract translation: 一种用于平坦化衬底的方法和组合物。 组合物包括压敏溶液和用于与金属或氧化金属络合的一种或多种化学试剂。 一种从基材表面除去含铜层的方法，包括将组合物施用于抛光介质，所述组合物包含压敏溶液，以及一种或多种与金属或氧化金属络合的化学试剂，以及研磨该基材 表面与抛光介质。

公开(公告)号：US06638143B2

公开(公告)日：2003-10-28

申请号：US09737414

申请日：2000-12-14

Applicant: Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Yuchun Wang ,  Stan D. Tsai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: B08B1/04 ,  B08B3/08 ,  B24B37/042 ,  B24B37/24 ,  B24B53/017 ,  B24D3/346 ,  H01L21/67046

Abstract: Ion exchange materials are employed in CMP methodologies to polish or thin a semiconductor substrate or a layer thereon. Embodiments include a polishing pad having an ion exchange material thereon and polishing a semiconductor substrate or a layer thereon with the polishing pad or a CMP composition including an ion exchange material therein and polishing the substrate or a layer thereon with the CMP composition or both.

公开(公告)号：US06569349B1

公开(公告)日：2003-05-27

申请号：US09694866

申请日：2000-10-23

Applicant: Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: C09K1300

CPC classification number: C09G1/04 ,  H01L21/3212

Abstract: A method and composition for planarizing a substrate. The composition includes one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, a polar solvent, and deionized water. The composition may further comprise one or more surfactants, one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including a polar solvent.

Abstract translation: 一种用于平坦化衬底的方法和组合物。 组合物包括一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂，极性溶剂和去离子水。 组合物还可以包含一种或多种表面活性剂，一种或多种调节pH和/或研磨颗粒的试剂。 该方法包括使用包含极性溶剂的组合物平面化底物。

公开(公告)号：US06561873B2

公开(公告)日：2003-05-13

申请号：US10093897

申请日：2002-03-08

Applicant: Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Stan D. Tsai ,  Yuchun Wang ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: B24B37/26 ,  B24B53/017 ,  H01L21/3212

Abstract: Dishing in chemical mechanical polishing (CMP) is reduced by introducing a material that balances electrochemical forces. In a first embodiment of the invention, a polishing pad having copper material in grooves on the polishing pad surface is used in the polishing process to reduce dishing. In a second embodiment of the invention, the polishing pad has perforations with copper fillings. In a third embodiment of the invention, a copper retaining ring on the polishing head introduces copper material to the CMP process to reduce dishing. In a fourth embodiment of the invention, a conditioning plate of copper is used in the polishing apparatus. In a fifth embodiment of the invention, additional copper features are placed on the substrate to be polished. The polishing of the additional features introduces copper steadily through the polishing process. In a sixth embodiment of the invention, copper compounds are added to the polish slurry.

公开(公告)号：US06435944B1

公开(公告)日：2002-08-20

申请号：US09428304

申请日：1999-10-27

Applicant: Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

Inventor： Yuchun Wang ,  Rajeev Bajaj ,  Fred C. Redeker

IPC: B24B100

CPC classification number: C09K3/1463 ,  C09G1/02

Abstract: A CMP slurry is formulated with a single component oxidizer capable of oxidizing a metal undergoing planarization and yielding a complexing agent which complexes with the oxidized metal thereby minimizing overetching. Embodiments include CMP Cu with a fixed abrasive pad or an abrasive containing slurry, employing a peroxy acid, e.g., peroxy benzoic acid, or a polyethylene glycol peroxy acid. In another embodiment, a single component is employed which dissociates in the slurry into an oxidizer and complexing agent, such as an amine-peroxy acid, e.g., urea peroxy acid.

Abstract translation: CMP浆料与能够氧化经历平坦化的金属的单一成分氧化剂一起配制，并产生与氧化金属络合的络合剂，从而使过蚀刻最小化。 实施方案包括具有固定磨料垫的CMP Cu或含磨料的浆料，使用过氧酸，例如过氧苯甲酸或聚乙二醇过氧酸。 在另一个实施方案中，使用单一组分，其在浆料中解离成氧化剂和络合剂，例如胺 - 过氧酸，例如尿素过氧酸。

公开(公告)号：US06790768B2

公开(公告)日：2004-09-14

申请号：US10025144

申请日：2001-12-18

Applicant: Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

Inventor： Yongsik Moon ,  David Mai ,  Kapila Wijekoon ,  Rajeev Bajaj ,  Rahul Surana ,  Yongqi Hu ,  Tony S. Kaushal ,  Shijian Li ,  Jui-Lung Li ,  Shi-Ping Wang ,  Gary Lam ,  Fred C. Redeker

IPC: B24B100

CPC classification number: H01L21/3212 ,  B24B37/042 ,  B24B37/30 ,  H01L21/7684

Abstract: Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Abstract translation: 提供了用于抛光衬底的方法和装置，其包括具有降低或最小衬底表面损伤和分层的导电和低k电介质材料。 在一个方面，提供了一种用于处理衬底的方法，包括将具有形成在其上的导电材料的衬底定位在具有一个或多个旋转载体头和一个或多个可旋转压板的抛光装置中，其中所述载体头包括保持环和 用于固定基板的薄膜和压板具有设置在其上的抛光制品，其以约0.4psi或更大于膜压力的保持环接触压力将基板表面和抛光制品彼此接触，并抛光基板以去除导电 材料。