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    WAFER-LEVEL LIGHT EMITTING DIODE STRUCTURE, LIGHT EMITTING DIODE CHIP, AND METHOD FOR FORMING THE SAME
    3.
    发明申请
    WAFER-LEVEL LIGHT EMITTING DIODE STRUCTURE, LIGHT EMITTING DIODE CHIP, AND METHOD FOR FORMING THE SAME 有权
    水平发光二极管结构，发光二极管芯片及其形成方法

    公开(公告)号：US20120034714A1

    公开(公告)日：2012-02-09

    申请号：US13197677

    申请日：2011-08-03

    Applicant: Yao-Jun TSAI ,  Chen-Peng HSU ,  Kuo-Feng LIN ,  Hsun-Chih LIU ,  Hung-Lieh HU ,  Chien-Jen SUN

    Inventor： Yao-Jun TSAI ,  Chen-Peng HSU ,  Kuo-Feng LIN ,  Hsun-Chih LIU ,  Hung-Lieh HU ,  Chien-Jen SUN

    IPC: H01L21/66 ,  H01L33/36

    CPC classification number: H01L33/0095 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0016

    Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.

    Abstract translation: 提供了一种制造晶片级发光二极管结构的方法。 该方法包括：提供衬底，其中第一半导体层，发光层和第二半导体层依次设置在衬底上; 通过图案化工艺对第一半导体层，发光层和第二半导体层进行处理，以形成设置在第二凹部上的第一凹部，第二凹部，层叠结构，以及设置在第二凹部 凹陷部分，其中所述堆叠结构包括图案化的第二半导体层，图案化发光层和图案化的第一半导体层; 在第一凹部的残留的第一半导体层上形成第一电极; 以及形成相应地设置在所述第二凹陷部分的图案化的第二半导体层上的第二电极。

    BONDING SYSTEM FOR OPTICAL ALIGNMENT
    4.
    发明申请
    BONDING SYSTEM FOR OPTICAL ALIGNMENT 有权
    用于光学对准的接合系统

    公开(公告)号：US20110280511A1

    公开(公告)日：2011-11-17

    申请号：US12778127

    申请日：2010-05-12

    Applicant: Chih-Tsung Shih ,  Chien-Jen Sun ,  Jerry Chien ,  Chu-Liang Cheng ,  Yi-Jen Chan

    Inventor： Chih-Tsung Shih ,  Chien-Jen Sun ,  Jerry Chien ,  Chu-Liang Cheng ,  Yi-Jen Chan

    IPC: G02B6/12 ,  H01L33/48

    CPC classification number: G02B6/423 ,  G02B6/4238 ,  H01L2224/8114

    Abstract: A bonding system and a bonding method for alignment are provided. An optical semiconductor includes a light source and a plurality of protruded elements on a surface thereof. A semiconductor bench includes a light receiving element and a plurality of recess elements on a surface thereof. A sidewall of the protruded elements or a sidewall of the recess elements is slanted. A first metallized layer is disposed on a bonding surface of each protruded element and a second metallized layer is disposed on a bottom surface of each recess element, wherein the first metallized layer is used for bonding with the second metallized layer.

    Abstract translation: 提供了一种接合系统和用于对准的接合方法。 光学半导体在其表面上包括光源和多个突出元件。 半导体工作台在其表面上包括光接收元件和多个凹陷元件。 突出元件的侧壁或凹部的侧壁是倾斜的。 第一金属化层设置在每个突出元件的接合表面上，并且第二金属化层设置在每个凹陷元件的底表面上，其中第一金属化层用于与第二金属化层结合。

    Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same
    6.
    发明授权
    Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same 有权
    晶圆级发光二极管结构，发光二极管芯片及其形成方法

    公开(公告)号：US09178107B2

    公开(公告)日：2015-11-03

    申请号：US13197677

    申请日：2011-08-03

    Applicant: Yao-Jun Tsai ,  Chen-Peng Hsu ,  Kuo-Feng Lin ,  Hsun-Chih Liu ,  Hung-Lieh Hu ,  Chien-Jen Sun

    Inventor： Yao-Jun Tsai ,  Chen-Peng Hsu ,  Kuo-Feng Lin ,  Hsun-Chih Liu ,  Hung-Lieh Hu ,  Chien-Jen Sun

    IPC: H01L33/00 ,  H01L33/20 ,  H01L33/44

    CPC classification number: H01L33/0095 ,  H01L33/20 ,  H01L33/44 ,  H01L2933/0016

    Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.

    Abstract translation: 提供了一种制造晶片级发光二极管结构的方法。 该方法包括：提供衬底，其中第一半导体层，发光层和第二半导体层依次设置在衬底上; 通过图案化工艺对第一半导体层，发光层和第二半导体层进行处理，以形成设置在第二凹部上的第一凹部，第二凹部，层叠结构，以及设置在第二凹部 凹陷部分，其中所述堆叠结构包括图案化的第二半导体层，图案化发光层和图案化的第一半导体层; 在第一凹部的残留的第一半导体层上形成第一电极; 以及形成相应地设置在所述第二凹陷部分的图案化的第二半导体层上的第二电极。

    LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF
    9.
    发明申请
    LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF 有权
    发光装置及其制造方法

    公开(公告)号：US20090115313A1

    公开(公告)日：2009-05-07

    申请号：US12182218

    申请日：2008-07-30

    Applicant: Chien-Chun LU ,  Chia-Tai Kuo ,  Chen-Peng Hsu ,  Hung-Lieh Hu ,  Chien-Jen Sun

    Inventor： Chien-Chun LU ,  Chia-Tai Kuo ,  Chen-Peng Hsu ,  Hung-Lieh Hu ,  Chien-Jen Sun

    IPC: H01J1/62 ,  H01J9/02

    CPC classification number: H01L33/505 ,  H01L33/508 ,  H01L33/60 ,  H01L2924/0002 ,  H05B33/10 ,  H01L2924/00

    Abstract: A light emitting device and a fabricating method thereof are described. The light emitting device includes a substrate, a light emitting chip, a tubular structure, and a fluorescent conversion layer. The tubular structure is formed on a surface of the substrate. The light emitting chip is disposed on the surface of the substrate and is surrounded by the tubular structure. The fluorescent conversion layer is disposed in the tubular structure and covers the light emitting chip. A ratio of a maximal vertical thickness and a maximal horizontal thickness of the fluorescent conversion layer at the light emitting chip is between 0.1 and 10. A distance for the light ray to pass through the fluorescent conversion layer is controlled by using the tubular structure, so as to solve a problem of the conventional art that fluorescent powder coating package technique results in non-uniform color temperature of the emitted light.

    Abstract translation: 描述了发光器件及其制造方法。 发光器件包括衬底，发光芯片，管状结构和荧光转换层。 管状结构形成在基板的表面上。 发光芯片设置在基板的表面上并被管状结构包围。 荧光转换层设置在管状结构中并覆盖发光芯片。 发光芯片上的荧光转换层的最大垂直厚度与最大水平厚度之比在0.1和10之间。通过使用管状结构来控制光线通过荧光转换层的距离，因此 为了解决现有技术的问题，荧光粉末涂布包装技术导致发出的光的不均匀的色温。

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