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1.发明授权Wafer-level light emitting diode structure, light emitting diode chip, and method for forming the same 有权晶圆级发光二极管结构，发光二极管芯片及其形成方法公开(公告)号：US09178107B2
公开(公告)日：2015-11-03
申请号：US13197677
申请日：2011-08-03
Applicant: Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chih Liu , Hung-Lieh Hu , Chien-Jen Sun
Inventor： Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chih Liu , Hung-Lieh Hu , Chien-Jen Sun
CPC classification number: H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0016
Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.
Abstract translation: 提供了一种制造晶片级发光二极管结构的方法。 该方法包括：提供衬底，其中第一半导体层，发光层和第二半导体层依次设置在衬底上; 通过图案化工艺对第一半导体层，发光层和第二半导体层进行处理，以形成设置在第二凹部上的第一凹部，第二凹部，层叠结构，以及设置在第二凹部 凹陷部分，其中所述堆叠结构包括图案化的第二半导体层，图案化发光层和图案化的第一半导体层; 在第一凹部的残留的第一半导体层上形成第一电极; 以及形成相应地设置在所述第二凹陷部分的图案化的第二半导体层上的第二电极。
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公开(公告)号：US08692274B2
公开(公告)日：2014-04-08
申请号：US13448413
申请日：2012-04-17
Applicant: Chao-Wei Li , Chen-Peng Hsu , Yao-Jun Tsai , Hung-Lieh Hu
Inventor： Chao-Wei Li , Chen-Peng Hsu , Yao-Jun Tsai , Hung-Lieh Hu
IPC: H01L33/00
CPC classification number: H01L33/648 , H01L33/642 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: A light-emitting diode (LED) package structure including a carrier substrate, at least one LED chip, an optical element and a thermal-conductive transparent liquid is provided. The LED chip is disposed on the carrier substrate and has an active layer. The optical element is disposed on the substrate and forms a sealed space with the carrier substrate, and the LED chip is disposed in the sealed space. The thermal-conductive transparent liquid fills up the sealed space.
Abstract translation: 提供了包括载体基板，至少一个LED芯片，光学元件和导热透明液体的发光二极管（LED）封装结构。 LED芯片设置在载体基板上并具有有源层。 光学元件设置在基板上并与载体基板形成密封空间，并且LED芯片设置在密封空间中。 导热透明液体填充密封空间。
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3.发明授权Light emitting diode structure having a conductive thin film for connecting a light emitting stack to an electrode and LED packaging structure using the same 有权具有用于将发光堆叠连接到电极的导电薄膜的发光二极管结构和使用其的LED封装结构公开(公告)号：US08193541B2
公开(公告)日：2012-06-05
申请号：US12980593
申请日：2010-12-29
Applicant: Yao-Jun Tsai , Chen-Peng Hsu , Hung-Lieh Hu , Ji-Feng Chen
Inventor： Yao-Jun Tsai , Chen-Peng Hsu , Hung-Lieh Hu , Ji-Feng Chen
CPC classification number: H01L25/167 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting diode (LED) structure and a LED packaging structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.
Abstract translation: 公开了一种发光二极管（LED）结构和LED封装结构。 LED结构包括子安装座，堆叠结构，电极，隔离层和导电薄膜层。 子安装座具有与第一表面相对的第一表面和第二表面。 叠层结构具有层压在第一表面上的第一半导体层，有源层和第二半导体层。 电极与第一表面上的堆叠结构隔开。 隔离层设置在第一表面上以包围堆叠结构以及覆盖有源层的侧面。 导电薄膜层将电极连接到堆叠结构并覆盖堆叠结构。
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4.发明申请LIGHT EMITTING DIODE CHIP, LIGHT EMITTING DIODE PACKAGE STRUCTURE, AND METHOD FOR FORMING THE SAME 有权发光二极管芯片，发光二极管封装结构及其形成方法公开(公告)号：US20130087823A1
公开(公告)日：2013-04-11
申请号：US13806703
申请日：2011-08-03
Applicant: Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chin Liu , Ji-Feng Chen , Hung-Lieh Hu , Chien-Jen Sun
Inventor： Yao-Jun Tsai , Chen-Peng Hsu , Kuo-Feng Lin , Hsun-Chin Liu , Ji-Feng Chen , Hung-Lieh Hu , Chien-Jen Sun
CPC classification number: H01L33/62 , H01L33/0079 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/38 , H01L33/48 , H01L2224/06102 , H01L2224/14 , H01L2224/16225 , H01L2224/24 , H01L2224/48091 , H01L2224/48227 , H01L2224/48463 , H01L2224/73267 , H01L2224/82 , H01L2224/8592 , H01L2224/92244 , H01L2924/12032 , H01L2924/00 , H01L2924/00014
Abstract: A light emitting diode chip, a light emitting diode package structure and a method for forming the same are provided. The light emitting diode chip includes a bonding layer, which has a plurality of voids, or a minimum horizontal distance between a surrounding boundary of the light emitting diode chip and the bonding layer is larger than 0. The light emitting diode chip, the light emitting diode package structure and the method may improve the product yields and enhance the light emitting efficiency.
Abstract translation: 提供一种发光二极管芯片，发光二极管封装结构及其形成方法。 发光二极管芯片包括具有多个空隙的接合层，或者发光二极管芯片的周围边界与接合层之间的最小水平距离大于0.发光二极管芯片，发光 二极管封装结构和方法可以提高产品产量并提高发光效率。
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5.发明申请WAFER-LEVEL LIGHT EMITTING DIODE STRUCTURE, LIGHT EMITTING DIODE CHIP, AND METHOD FOR FORMING THE SAME 有权水平发光二极管结构，发光二极管芯片及其形成方法公开(公告)号：US20120034714A1
公开(公告)日：2012-02-09
申请号：US13197677
申请日：2011-08-03
Applicant: Yao-Jun TSAI , Chen-Peng HSU , Kuo-Feng LIN , Hsun-Chih LIU , Hung-Lieh HU , Chien-Jen SUN
Inventor： Yao-Jun TSAI , Chen-Peng HSU , Kuo-Feng LIN , Hsun-Chih LIU , Hung-Lieh HU , Chien-Jen SUN
CPC classification number: H01L33/0095 , H01L33/20 , H01L33/44 , H01L2933/0016
Abstract: A method for fabricating a wafer-level light emitting diode structure is provided. The method includes: providing a substrate, wherein a first semiconductor layer, a light emitting layer, and a second semiconductor layer are sequentially disposed on the substrate; subjecting the first semiconductor layer, the light emitting layer, and the second semiconductor layer with a patterning process to form a first depressed portion, a second depressed portion, a stacked structure disposed on the second depressed portion and a remained first semiconductor layer disposed on the depressed portion, wherein the stacked structure comprises a patterned second semiconductor layer, a patterned emitting layer, and a patterned first semiconductor layer; forming a first electrode on the remained first semiconductor layer of the first depressed portion; and forming a second electrode correspondingly disposed on the patterned second semiconductor layer of the second depressed portion.
Abstract translation: 提供了一种制造晶片级发光二极管结构的方法。 该方法包括：提供衬底，其中第一半导体层，发光层和第二半导体层依次设置在衬底上; 通过图案化工艺对第一半导体层，发光层和第二半导体层进行处理，以形成设置在第二凹部上的第一凹部，第二凹部，层叠结构，以及设置在第二凹部 凹陷部分，其中所述堆叠结构包括图案化的第二半导体层，图案化发光层和图案化的第一半导体层; 在第一凹部的残留的第一半导体层上形成第一电极; 以及形成相应地设置在所述第二凹陷部分的图案化的第二半导体层上的第二电极。
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Patent Agency Ranking
6.发明申请Light Emitting Diode Structure, LED Packaging Structure Using the Same and Method of Forming the Same 有权发光二极管结构，使用其的LED封装结构及其形成方法公开(公告)号：US20110133229A1
公开(公告)日：2011-06-09
申请号：US12980593
申请日：2010-12-29
Applicant: Yao-Jun Tsai , Chen-Peng Hsu , Hung-Lieh Hu , Ji-Feng Chen
Inventor： Yao-Jun Tsai , Chen-Peng Hsu , Hung-Lieh Hu , Ji-Feng Chen
CPC classification number: H01L25/167 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting diode (LED) structure and a LED packaging structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.
Abstract translation: 公开了一种发光二极管（LED）结构和LED封装结构。 LED结构包括子安装座，堆叠结构，电极，隔离层和导电薄膜层。 子安装座具有与第一表面相对的第一表面和第二表面。 叠层结构具有层压在第一表面上的第一半导体层，有源层和第二半导体层。 电极与第一表面上的堆叠结构隔开。 隔离层设置在第一表面上以包围堆叠结构以及覆盖有源层的侧面。 导电薄膜层将电极连接到堆叠结构并覆盖堆叠结构。
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公开(公告)号：US20110092002A1
公开(公告)日：2011-04-21
申请号：US12976977
申请日：2010-12-22
Applicant: Yao-Jun Tsai , Chen-Peng Hsu , Chao-Wei Li , Hung-Lieh Hu
Inventor： Yao-Jun Tsai , Chen-Peng Hsu , Chao-Wei Li , Hung-Lieh Hu
CPC classification number: H01L33/486 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.
Abstract translation: 本发明公开了一种制造发光二极管（LED）封装结构的方法。 该方法包括以下步骤：提供具有基板和第一突起的载体，其中第一突起设置在基板上并具有凹部。 粘合层和LED芯片设置在凹部的底部，其中粘合层结合在载体和LED芯片之间，并且凹部的宽度与LED芯片的宽度之间的比率大于1 并且小于或等于1.5，使得在LED芯片的侧壁和凹部的内侧壁之间存在间隙。
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8.发明申请LIGHT EMITTING DIODE STRUCTURE, LED PACKAGING STRUCTURE USING THE SAME AND METHOD OF FORMING THE SAME 有权发光二极管结构，使用其的LED封装结构及其形成方法公开(公告)号：US20100193809A1
公开(公告)日：2010-08-05
申请号：US12364536
申请日：2009-02-03
Applicant: Yao-Jun Tsai , Chen-Peng Hsu , Hung-Lieh Hu , Ji-Feng Chen
Inventor： Yao-Jun Tsai , Chen-Peng Hsu , Hung-Lieh Hu , Ji-Feng Chen
CPC classification number: H01L25/167 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting diode (LED) structure, a LED packaging structure, and a method of forming LED structure are disclosed. The LED structure includes a sub-mount, a stacked structure, an electrode, an isolation layer and a conductive thin film layer. The sub-mount has a first surface and a second surface opposite the first surface. The stacked structure has a first semiconductor layer, an active layer and a second semiconductor layer that are laminated on the first surface. The electrode is disposed apart from the stacked structure on the first surface. The isolation layer is disposed on the first surface to surround the stacked structure as well as cover the lateral sides of the active layer. The conductive thin film layer connects the electrode to the stacked structure and covers the stacked structure.
Abstract translation: 公开了一种发光二极管（LED）结构，LED封装结构以及LED结构的形成方法。 LED结构包括子安装座，堆叠结构，电极，隔离层和导电薄膜层。 子安装座具有与第一表面相对的第一表面和第二表面。 叠层结构具有层压在第一表面上的第一半导体层，有源层和第二半导体层。 电极与第一表面上的堆叠结构隔开。 隔离层设置在第一表面上以包围堆叠结构以及覆盖有源层的侧面。 导电薄膜层将电极连接到堆叠结构并覆盖堆叠结构。
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9.发明申请公开(公告)号：US20100072487A1
公开(公告)日：2010-03-25
申请号：US12419299
申请日：2009-04-07
Applicant: Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
Inventor： Yao-Jun Tsai , Jinn-Kong Sheu , Hsi-Hsuan Yen , Hung-Lieh Hu
CPC classification number: H01L33/14 , H01L33/38 , H01L33/382
Abstract: A light emitting diode (LED), a fabricating method thereof, and a package structure thereof are provided. The LED includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on the first semiconductor layer, a second semiconductor layer disposed on the active layer, a current distribution modifying pattern, a first electrode and a second electrode. The active layer and the second semiconductor layer form a mesa structure and expose a part of the first semiconductor layer. The current distribution modifying pattern is disposed on the second semiconductor layer. The first electrode is disposed on and electrically connected to the first semiconductor layer exposed by the mesa structure. The second electrode is disposed on the current distribution modifying pattern and is electrically connected to the second semiconductor layer. The LED has superior light emitting efficiency.
Abstract translation: 提供一种发光二极管（LED）及其制造方法及其封装结构。 LED包括基板，设置在基板上的第一半导体层，设置在第一半导体层上的有源层，设置在有源层上的第二半导体层，电流分布修改图案，第一电极和第二电极。 有源层和第二半导体层形成台面结构并暴露第一半导体层的一部分。 电流分布修改图案设置在第二半导体层上。 第一电极设置在由台面结构暴露的第一半导体层上并与其电连接。 第二电极设置在电流分布修改图案上并且电连接到第二半导体层。 LED具有出色的发光效率。
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公开(公告)号：US08349627B2
公开(公告)日：2013-01-08
申请号：US12976977
申请日：2010-12-22
Applicant: Yao-Jun Tsai , Chen-Peng Hsu , Chao-Wei Li , Hung-Lieh Hu
Inventor： Yao-Jun Tsai , Chen-Peng Hsu , Chao-Wei Li , Hung-Lieh Hu
IPC: H01L33/48
CPC classification number: H01L33/486 , H01L33/60 , H01L33/62 , H01L33/641 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2224/8592 , H01L2924/181 , H01L2924/3025 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: The present invention discloses a method for fabricating a light emitting diode (LED) package structure. The method comprises the following steps: a carrier having a substrate and a first protrusion is provided, wherein the first protrusion is disposed on the substrate and has a recess. An adhesion layer and a LED chip are disposed on a bottom of the recess, wherein the adhesion layer is bonded between the carrier and the LED chip, and a ratio between a width of the recess and a width of the LED chip is larger than 1 and smaller than or equal to 1.5 such that a gap existing between a sidewall of the LED chip and an inner sidewall of the recess.
Abstract translation: 本发明公开了一种制造发光二极管（LED）封装结构的方法。 该方法包括以下步骤：提供具有基板和第一突起的载体，其中第一突起设置在基板上并具有凹部。 粘合层和LED芯片设置在凹部的底部，其中粘合层结合在载体和LED芯片之间，并且凹部的宽度与LED芯片的宽度之间的比率大于1 并且小于或等于1.5，使得在LED芯片的侧壁和凹部的内侧壁之间存在间隙。
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