Abstract:
A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.
Abstract:
A showerhead integrating intake and exhaust is provided for showering a gas. The showerhead at least includes a showerhead body that has a gas-active surface and a plurality of intake bores thereon. The showerhead body further includes a central exhaust vent disposed on the gas-active surface. The central exhaust vent may exhaust standing gas and further pre-exhaust byproduct from reaction process.
Abstract:
A casing is used for being rotatably disposed in a plasma jet system. The casing is rotated around a central axis. The casing comprises a main body and a plasma nozzle. The main body has a first cavity. The plasma nozzle is disposed under the main body and has a second cavity and a straight channel. The second cavity is connected to the first cavity. The straight channel is located at a side of the plasma nozzle opposite to the main body and connected to the second cavity. The straight channel has an extension axis which is substantially parallel with the central axis and separated from the central axis by an interval. Plasma generated by the plasma jet system jets out through the straight channel.
Abstract:
A plasma system for generating a plasma is generated. The plasma system includes a tube, a positive electrode and a negative electrode. The tube has a plasma jet opening, a first end surface and a second end surface. The plasma jet opening penetrates the wall of the tube. The plasma passes through the plasma jet opening and is emitted to the outside of the tube. The positive electrode has a side surface facing and adjacent to the tube. The negative electrode is separated from the positive electrode by a first predetermined distance. The negative electrode has a negative electrode side surface facing and adjacent to the tube. The first positive electrode and the first negative electrode are disposed between the first end surface and the second end surface, and a portion of the plasma jet opening is disposed between the positive electrode and the negative electrode.
Abstract:
A machine for sealing a cryotube with a thermoplastic film, which is heated and shrunk, is disclosed. The cryotube has a cap with threads, a tube body and a tubular thermoplastic film, wherein the cap is threadably connected to an open end of the tube body and the thermoplastic film is received by the cap and the tube body at the connection thereof. The machine includes a holder for holding the cryotube, a rotation mechanism for rotating the cryotube around a longitudinal axis of the cryotube, and a heating mechanism for heating the thermoplastic film of the cryotube hold in the holder, so that the thermoplastic film shrinks.
Abstract:
A film removal method and apparatus for removing a film from a substrate are disclosed. The method comprises the steps of disposing a plasma generator and a sucking apparatus over the substrate, projecting a plasma beam from the plasma generator onto the film obliquely, disposing the sucking apparatus on a reflection path of plasma projected by the plasma generator, and sucking a by-product of an incomplete plasma reaction occurring to the film so as to keep a surface of the substrate clean, with a view to overcoming the drawbacks of deposition of the by-product which results from using the plasma as a surface cleansing means under atmospheric conditions.
Abstract:
The diaphragm valve uses a metal dish-type diaphragm set to control the inflow and outflow of fluid. The metal dish-type diaphragm set is above an air flow channel to control the stem above the metal dish-type diaphragm set, and the air will be blocked by pressing the metal dish-type diaphragm to make it fit the metal valve base in the air flow channel; this non-metal valve base is fixed in the air flow channel by a fixed shrunk ring with a taper cross section, and the in-between metal diaphragm in the metal dish-type diaphragm set is annular in the center to reduce the metallic friction between metal diaphragms, to increase application times and to lower the leakage rate of the diaphragm valve.
Abstract:
A wide area atmospheric pressure plasma jet apparatus including a transmission mechanism, a plasma housing and two plasma-generating devices is provided. The transmission mechanism includes a rotation output end that has a center axis. The plasma housing has an opening. The plasma housing further has a air-attracting hole near the rotation output end and extended from an outer wall of the plasma housing to the interior of the plasma housing, so that the heat of the plasma housing can be dissipated due to the generated gas circulation. The plasma-generating devices are disposed within the plasma housing and connected with the rotation output end. Each of the plasma-generating devices has a plasma nozzle located at the opening and tilts from the center axis. When the rotation output end drives the plasma-generating devices to rotate, two plasma beams are obliquely ejected from the plasma nozzle and the plasma processing area is increased.
Abstract:
A method for deposition of a selenium thin-film includes the following steps. First, a plasma head is provided. Then, a substrate is supported in an atmospheric pressure. Next, a solid-state selenium source is dissociated by the plasma head to deposit the selenium thin-film on the substrate. The plasma head includes a chamber, a housing and the solid-state selenium source. Plasma is produced in the chamber. The chamber is surrounded by the housing. The solid-state selenium source is supported by the housing.
Abstract:
A casing is used for being rotatably disposed in a plasma jet system. The casing is rotated around a central axis. The casing comprises a main body and a plasma nozzle. The main body has a first cavity. The plasma nozzle is disposed under the main body and has a second cavity and a straight channel. The second cavity is connected to the first cavity. The straight channel is located at a side of the plasma nozzle opposite to the main body and connected to the second cavity. The straight channel has an extension axis which is substantially parallel with the central axis and separated from the central axis by an interval. Plasma generated by the plasma jet system jets out through the straight channel.