公开(公告)号：US20140123900A1

公开(公告)日：2014-05-08

申请号：US13935935

申请日：2013-07-05

申请人： Ching-Chiun WANG ,  Chih-Yung Huang ,  Kung-Liang Lin ,  Jung-Chen Chien ,  Chen-Der Tsai ,  Chien-Chih Chen

发明人： Ching-Chiun WANG ,  Chih-Yung Huang ,  Kung-Liang Lin ,  Jung-Chen Chien ,  Chen-Der Tsai ,  Chien-Chih Chen

IPC分类号： C23C16/455 ,  B05B1/00

CPC分类号： C23C16/45565 ,  C23C16/45519 ,  C23C16/45572 ,  C23C16/45593

摘要： A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.

摘要翻译： 具有气幕的气体淋浴装置包括：用于喷射反应气体的第一气体喷淋单元，从而形成反应气体区域;以及第二气体淋浴单元。 布置在第一气体淋浴器单元周围的第二气体淋浴单元包括用于提供缓冲气体的缓冲气体室和窗帘分配板。 帘幕分配板还包括用于喷射缓冲气体的多个通孔，从而在反应气体区域的周围形成气幕。 在另一个实施例中，通过利用具有气幕的气体淋浴装置，提供一种用于沉积膜的装置，其中气幕防止反应气体区域中的反应气体直接受到真空压力的影响，使得反应气体的停留时间 可延长反应气体的利用率和成膜效率。

公开(公告)号：US10458019B2

公开(公告)日：2019-10-29

申请号：US13935935

申请日：2013-07-05

申请人： Ching-Chiun Wang ,  Chih-Yung Huang ,  Kung-Liang Lin ,  Jung-Chen Chien ,  Chen-Der Tsai ,  Chien-Chih Chen

发明人： Ching-Chiun Wang ,  Chih-Yung Huang ,  Kung-Liang Lin ,  Jung-Chen Chien ,  Chen-Der Tsai ,  Chien-Chih Chen

IPC分类号： C23C16/00 ,  C23C16/455

摘要： A gas shower device having gas curtain comprises a first gas shower unit for injecting a reaction gas, thereby forming a reaction gas region, and a second gas shower unit. The second gas shower unit arranged around a periphery of the first gas shower unit comprises a buffer gas chamber for providing a buffer gas, and a curtain distribution plate. The curtain distribution plate further comprises a plurality through holes for injecting the buffer gas, thereby forming a gas curtain around a periphery of the reaction gas region. In another embodiment, an apparatus for depositing film is provided by utilizing the gas shower device having gas curtain, wherein the gas curtain prevents the reaction gas in the reaction gas region from being affected directly by a vacuum pressure so that a residence time of reaction gas can be extended thereby increasing the utilization of reaction gas and film-forming efficiency.