公开(公告)号：US20250118524A1

公开(公告)日：2025-04-10

申请号：US18905177

申请日：2024-10-03

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil J. Bassom ,  Joshua Abeshaus

IPC: H01J37/08 ,  H01J37/317

Abstract: An arc chamber for an ion source defines a chamber volume, and a target material is disposed within the chamber volume. The target material comprises a dopant species and can be contained in a target member. An indirectly heated cathode is positioned within the chamber volume and ionizes a source gas within the chamber volume, defining a plasma having a plasma thermal emission. A target heater selectively heats the target material independently from the plasma thermal emission associated with the plasma. The target heater can be a resistive heating element, inductive heating element, halogen heating element, or a laser configured to selectively heat at least a portion of the target member. The target member can consist of a solid dopant material or can contain a liquid dopant material.

公开(公告)号：US20250087451A1

公开(公告)日：2025-03-13

申请号：US18820813

申请日：2024-08-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil J. Bassom ,  Joshua Abeshaus ,  David Sporleder

IPC: H01J37/30 ,  H01J37/317

Abstract: An ion source having a thermionically-emitting cathode coupled to a plasma chamber and is exposed to a plasma chamber environment. A first power supply is coupled to a first filament associated with the thermionically-emitting cathode and is configured to selectively supply a first power to the first filament to heat the first filament to a first temperature and induce a thermionic emission from the thermionically-emitting cathode. A non-thermionically emitting cathode is coupled to the plasma chamber and exposed to the plasma chamber environment. A second power supply supplies a second power to a second filament associated with the non-thermionically emitting cathode and heats the second filament and the non-thermionically emitting cathode to a second temperature while not inducing thermionic emission from the non-thermionically emitting cathode, where condensation within the plasma chamber environment is minimized. A controller can control the first and second power supplies to provide constant power or emission.

公开(公告)号：US12051561B2

公开(公告)日：2024-07-30

申请号：US18345618

申请日：2023-06-30

Applicant: Axcelis Technologies, Inc.

Inventor： Neil K. Colvin ,  Neil Bassom ,  Edward Moore

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/006 ,  H01J2237/05

Abstract: An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.

公开(公告)号：US20240038490A1

公开(公告)日：2024-02-01

申请号：US17876812

申请日：2022-07-29

Applicant: Axcelis Technologies, Inc.

Inventor： Steven T. Drummond ,  Joshua Max Abeshaus

IPC: H01J37/317 ,  H01J37/075

CPC classification number: H01J37/3171 ,  H01J37/075

Abstract: A cathode apparatus for an ion source has a cathode with a positioning feature and a blind hole. A cathode holder has an aperture defined by a thru-hole and a locating feature defined along an aperture axis. The thru-hole receives the cathode along the aperture axis in first and second alignment positions based on a rotational orientation of the positioning feature with respect to the locating feature. The first alignment position locates the cathode at a first axial position along the aperture axis. The second alignment position locates the cathode at a second axial position along the axial axis. A filament device has a filament clamp, a filament rod defining a filament axis, and a filament coupled to the filament rod. The filament clamp is in selective engagement with the filament rod to selectively position the filament along the filament axis within the blind hole.

公开(公告)号：US11798775B2

公开(公告)日：2023-10-24

申请号：US17491084

申请日：2021-09-30

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom ,  Jonathan David

IPC: H01J27/00 ,  H01J37/08 ,  H01J37/075 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/075 ,  H01J37/3171

Abstract: An ion source has an arc chamber with a first end and a second end. A first cathode at the first end of the arc chamber has a first cathode body and a first filament disposed within the first cathode body. A second cathode at the second end of the arc chamber has a second cathode body and a second filament disposed within the second cathode body. A filament switch selectively electrically couples a filament power supply to each of the first filament and the second filament, respectively, based on a position of the filament switch. A controller controls the position of the filament switch to alternate the electrical coupling of the filament power supply between the first filament and the second filament for a plurality of switching cycles based on predetermined criteria. The predetermined criteria can be a duration of operation of the first filament and second filament.

公开(公告)号：US20230307210A1

公开(公告)日：2023-09-28

申请号：US17705503

申请日：2022-03-28

Applicant: Axcelis Technologies, Inc.

Inventor： Wilhelm Platow ,  Neil Bassom

IPC: H01J37/317 ,  H01L21/04 ,  G21K5/04 ,  H01J37/147

CPC classification number: H01J37/3171 ,  H01L21/0415 ,  G21K5/04 ,  H01J37/1475

Abstract: An ion implantation system has a mass analyzing magnet having interior and exterior region and defining a first entrance, second entrance, and an exit. A first ion source defines a first ion beam directed toward the first entrance along a first beam path. A second ion source defines a second ion beam directed toward the second entrance along a second beam path. A magnet current source supplies a magnet current to the mass analyzing magnet. Magnet control circuitry controls a polarity of the magnet current based on a formation of the first or second ion beam. The mass analyzing magnet mass analyzes the respective first or second ion beam to define defining a mass analyzed ion beam along a mass analyzed beam path. At least one shield in the interior or exterior region prevents line-of-sight between the first and second ion sources. Beamline components modify the mass analyzed ion beam.

公开(公告)号：US11756772B2

公开(公告)日：2023-09-12

申请号：US16887571

申请日：2020-05-29

Applicant: Axcelis Technologies, Inc.

Inventor： David Sporleder ,  Neil Bassom ,  Neil K. Colvin ,  Mike Ameen ,  Xiao Xu

IPC: H01J37/32 ,  H01J37/08 ,  H01J37/317

CPC classification number: H01J37/32504 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/3244 ,  H01J2237/006

Abstract: An ion source assembly and method has a source gas supply to provide a molecular carbon source gas to an ion source chamber. A source gas flow controller controls flow of the molecular carbon source gas to the ion source chamber. An excitation source excites the molecular carbon source gas to form carbon ions and radicals. An extraction electrode extracts the carbon ions from the ion source chamber, forming an ion beam. An oxidizing co-gas supply provides oxidizing co-gas to chamber. An oxidizing co-gas flow controller controls flow of the oxidizing co-gas to the chamber. The oxidizing co-gas decomposes and reacts with carbonaceous residues and atomic carbon forming carbon monoxide and carbon dioxide within the ion source chamber. A vacuum pump system removes the carbon monoxide and carbon dioxide, where deposition of atomic carbon within the ion source chamber is reduced and a lifetime of the ion source is increased.

公开(公告)号：US11728187B2

公开(公告)日：2023-08-15

申请号：US16229572

申请日：2018-12-21

Applicant: Axcelis Technologies, Inc.

Inventor： John Baggett ,  Joseph Ferrara

IPC: H01L21/67 ,  C23C16/458 ,  C23C16/52 ,  H01L21/683 ,  H01J37/32 ,  H01L21/265 ,  H01J37/317 ,  C23C16/44

CPC classification number: H01L21/67098 ,  C23C16/4412 ,  C23C16/4586 ,  C23C16/52 ,  H01J37/3171 ,  H01J37/32724 ,  H01L21/265 ,  H01L21/67248 ,  H01L21/6833

Abstract: A system, method, and apparatus for heating and cooling a component in chamber enclosing a chamber volume. Vacuum and purge gas ports are in fluid communication with the chamber volume. A heater apparatus selectively heats the heated apparatus to a process temperature. A vacuum valve provides selective fluid communication between a vacuum source and the vacuum port. A purge gas valve provides selective fluid communication between a purge gas source for a purge gas and the purge gas port. A controller controls the heater apparatus, vacuum and purge gas valves and to selectively flow the purge gas to the chamber volume when an equipment-safe temperature is reached. When an operator-safe temperature is reached, access to the chamber volume through an access port by an operator is permitted.

公开(公告)号：US20230245859A1

公开(公告)日：2023-08-03

申请号：US17588999

申请日：2022-01-31

Applicant: Axcelis Technologies, Inc.

Inventor： Neil J. Bassom ,  Joshua Abeshaus ,  David Sporleder ,  Neil Colvin ,  Joseph Valinski ,  Michael Cristoforo ,  Vladimir Romanov ,  Pradeepa Kowrikan Subrahmnya

IPC: H01J37/32 ,  H01J37/08

CPC classification number: H01J37/32412 ,  H01J37/08

Abstract: An ion source has an arc chamber defining an arc chamber volume. A reservoir is coupled to the arc chamber, defining a reservoir volume. The reservoir receives a source species to define a liquid within the reservoir volume. A conduit fluidly couples the reservoir volume to the arc chamber volume. First and second openings of the conduit are open to the respective reservoir and arc chamber volume. A heat source selectively heats the reservoir to melt the source species at a predetermined temperature. A liquid control apparatus controls a first volume of the liquid within the reservoir volume to define a predetermined supply of the liquid to the arc chamber volume. The liquid control apparatus is a pressurized gas source fluidly coupled to the reservoir to supply a gas to the reservoir and provide a predetermined amount of liquid to the arc chamber.

公开(公告)号：US11670483B2

公开(公告)日：2023-06-06

申请号：US16860386

申请日：2020-04-28

Applicant: Axcelis Technologies, Inc.

Inventor： Joseph Ferrara

IPC: H01J37/31 ,  H01J37/317 ,  H01J37/32 ,  H01L21/683 ,  H01J27/02 ,  C23C16/48 ,  C23C14/48

CPC classification number: H01J37/3171 ,  H01J27/02 ,  H01J37/3244 ,  H01L21/6833 ,  C23C14/48 ,  C23C16/486 ,  H01J37/32412 ,  H01J2237/049 ,  H01J2237/2001 ,  H01J2237/31749

Abstract: A gas generation system for an ion implantation system has a hydrogen generator configured to generate hydrogen gas within an enclosure. A chuck, such as an electrostatic chuck, supports a workpiece in an end station of the ion implantation system, and a delivery system provides the hydrogen gas to the chuck. The hydrogen gas can be provided through the chuck to a backside of the workpiece. Sensors can detect a presence of the hydrogen gas within the enclosure. A controller can control the hydrogen generator. An exhaust system can pass air through the enclosure to prevent a build-up of the hydrogen gas within the enclosure. A purge gas system provides a dilutant gas to the enclosure. An interlock system can control the hydrogen generator, delivery system, purge gas system, and exhaust system to mitigate hydrogen release based on a signal from the one or more sensors.