Patent search ap:("英飞凌科技股份有限公司") AND inv:"S.施密德" Page 1

1.

发明公开
芯片封装及形成芯片封装的方法有权

公开(公告)号：CN103377957A

公开(公告)日：2013-10-30

申请号：CN201310145102.8

申请日：2013-04-24

Applicant: 英飞凌科技股份有限公司

Inventor： 吴顺禄 , 李瑞家 , M.门格尔 , S.施密德 , H.托尔维斯滕

IPC: H01L21/60 , H01L21/56 , H01L23/31 , H01L23/29

CPC classification number: H01L23/3121 , H01L23/296 , H01L23/3142 , H01L23/492 , H01L23/49513 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29139 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48609 , H01L2224/48611 , H01L2224/48639 , H01L2224/48709 , H01L2224/48711 , H01L2224/48739 , H01L2224/48809 , H01L2224/48811 , H01L2224/48839 , H01L2224/73265 , H01L2224/83191 , H01L2224/83193 , H01L2224/83411 , H01L2224/83439 , H01L2224/83805 , H01L2224/85205 , H01L2224/85207 , H01L2224/85214 , H01L2224/85409 , H01L2224/85411 , H01L2224/85439 , H01L2224/85805 , H01L2224/8592 , H01L2224/85939 , H01L2924/00011 , H01L2924/01047 , H01L2924/01322 , H01L2924/12032 , H01L2924/12042 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01028 , H01L2924/01082 , H01L2924/01029 , H01L2924/01046 , H01L2924/0105 , H01L2224/83205

Abstract: 本发明涉及芯片封装及形成芯片封装的方法。实施例提供了一种形成芯片封装的方法。方法可以包括：在载体上附着至少一个芯片，该芯片包括与载体相对的芯片表面上的多个芯片焊盘；在载体和芯片的芯片焊盘上沉积第一粘合层，第一粘合层包括锡或铟；在第一粘合层上沉积第二粘合层，第二粘合层包括硅烷有机材料；以及在第二粘合层和芯片上沉积层压层或密封层。

2.

发明授权
芯片封装及形成芯片封装的方法有权

公开(公告)号：CN103377957B

公开(公告)日：2017-06-13

申请号：CN201310145102.8

申请日：2013-04-24

Applicant: 英飞凌科技股份有限公司

Inventor： 吴顺禄 , 李瑞家 , M.门格尔 , S.施密德 , H.托尔维斯滕

IPC: H01L21/60 , H01L21/56 , H01L23/31 , H01L23/29

CPC classification number: H01L23/3121 , H01L23/296 , H01L23/3142 , H01L23/492 , H01L23/49513 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29139 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48609 , H01L2224/48611 , H01L2224/48639 , H01L2224/48709 , H01L2224/48711 , H01L2224/48739 , H01L2224/48809 , H01L2224/48811 , H01L2224/48839 , H01L2224/73265 , H01L2224/83191 , H01L2224/83193 , H01L2224/83411 , H01L2224/83439 , H01L2224/83805 , H01L2224/85205 , H01L2224/85207 , H01L2224/85214 , H01L2224/85409 , H01L2224/85411 , H01L2224/85439 , H01L2224/85805 , H01L2224/8592 , H01L2224/85939 , H01L2924/00011 , H01L2924/01047 , H01L2924/01322 , H01L2924/12032 , H01L2924/12042 , H01L2924/1301 , H01L2924/13034 , H01L2924/1305 , H01L2924/13091 , H01L2924/15747 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012 , H01L2924/01028 , H01L2924/01082 , H01L2924/01029 , H01L2924/01046 , H01L2924/0105 , H01L2224/83205

Abstract: 本发明涉及芯片封装及形成芯片封装的方法。实施例提供了一种形成芯片封装的方法。方法可以包括：在载体上附着至少一个芯片，该芯片包括与载体相对的芯片表面上的多个芯片焊盘；在载体和芯片的芯片焊盘上沉积第一粘合层，第一粘合层包括锡或铟；在第一粘合层上沉积第二粘合层，第二粘合层包括硅烷有机材料；以及在第二粘合层和芯片上沉积层压层或密封层。

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