- 专利标题: 3D semiconductor device and system
-
申请号: US15488514申请日: 2017-04-16
-
公开(公告)号: US09953870B2公开(公告)日: 2018-04-24
- 发明人: Zvi Or-Bach , Deepak C. Sekar , Brian Cronquist , Zeev Wurman
- 申请人: Monolithic 3D Inc.
- 申请人地址: US CA San Jose
- 专利权人: MONOLITHIC 3D INC.
- 当前专利权人: MONOLITHIC 3D INC.
- 当前专利权人地址: US CA San Jose
- 代理机构: Tran & Associates
- 主分类号: H01L21/77
- IPC分类号: H01L21/77 ; H01L29/66 ; H01L27/10 ; H01L23/40 ; H01L23/00 ; H01L23/31 ; H01L27/02 ; B82Y10/00 ; H01L21/84 ; H01L23/528 ; H01L21/683 ; H01L21/762 ; H01L27/06 ; H01L29/78 ; H01L27/092 ; H01L27/105 ; H01L27/108 ; H01L29/786 ; H01L29/788 ; H01L29/792 ; H01L27/11 ; H01L27/11524 ; H01L27/11526 ; H01L27/11529 ; H01L27/11551 ; H01L27/1157 ; H01L27/11573 ; H01L27/11578 ; H01L27/118 ; H01L27/12 ; H01L29/10 ; G11C16/04 ; H01L23/36 ; H01L23/367 ; H01L27/088
摘要:
A 3D integrated circuit device, including: a first transistor; a second transistor; and a third transistor, where the third transistor is overlaying the second transistor and the third transistor is controlled by a third control line, where the second transistor is overlaying the first transistor and the second transistor is controlled by a second control line, where the first transistor is part of a control circuit controlling the second control line and the third control line, and where the second transistor and the third transistor are self-aligned.
公开/授权文献
- US20170221761A1 3D SEMICONDUCTOR DEVICE AND SYSTEM 公开/授权日:2017-08-03
信息查询
IPC分类: