Invention Grant
- Patent Title: Semiconductor device with a trench electrode
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Application No.: US14957116Application Date: 2015-12-02
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Publication No.: US09837527B2Publication Date: 2017-12-05
- Inventor: Ralf Siemieniec , Wolfgang Bergner , Romain Esteve , Dethard Peters
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014117780 20141203
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/16 ; H01L29/04 ; H01L29/10 ; H01L29/417 ; H01L29/423 ; H01L29/66 ; H01L29/739 ; H01L29/08 ; H01L29/06 ; H01L29/872 ; H01L21/265 ; H01L21/3115 ; H01L29/36 ; H01L29/861
Abstract:
A semiconductor device includes a semiconductor body and a device cell in the semiconductor body. The device cell includes: drift, source, body and diode regions; a pn junction between the diode and drift regions; a trench with first and second opposing sidewalls and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the trench bottom; a gate electrode in the trench and dielectrically insulated from the source, body, diode and drift regions by a gate dielectric; a further trench extending from a first surface of the semiconductor body into the semiconductor body; a source electrode arranged in the further trench adjoining the source and diode regions. The diode region includes a lower diode region arranged below the trench bottom. The lower diode region has a maximum of a doping concentration distant to the trench bottom.
Public/Granted literature
- US20160163852A1 Semiconductor Device with a Trench Electrode Public/Granted day:2016-06-09
Information query
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