A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.