- 专利标题： Semiconductor device and method for reduced bias threshold instability
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申请号： US16433809申请日： 2019-06-06
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公开(公告)号： US11417759B2公开(公告)日： 2022-08-16
- 发明人: Stephen Daley Arthur , Joseph Darryl Michael , Tammy Lynn Johnson , David Alan Lilienfeld , Kevin Sean Matocha , Jody Alan Fronheiser , William Gregg Hawkins
- 申请人： General Electric Company
- 申请人地址： US NY Schenectady
- 专利权人： General Electric Company
- 当前专利权人： General Electric Company
- 当前专利权人地址： US NY Schenectady
- 代理机构： Fitch, Even, Tabin & Flannery LLP
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/04 ; H01L29/45 ; H01L29/16 ; H01L29/49 ; H01L29/739 ; H01L29/745 ; H01L23/04 ; H01L21/50
摘要：
According to one embodiment, a semiconductor device, having a semiconductor substrate comprising silicon carbide with a gate electrode disposed on a portion of the substrate on a first surface with, a drain electrode disposed on a second surface of the substrate. There is a dielectric layer disposed on the gate electrode and a remedial layer disposed about the dielectric layer, wherein the remedial layer is configured to mitigate negative bias temperature instability maintaining a change in threshold voltage of less than about 1 volt. A source electrode is disposed on the remedial layer, wherein the source electrode is electrically coupled to a contact region of the semiconductor substrate.
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