- 专利标题: Method of manufacturing a silicon wafer
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申请号: US15189067申请日: 2016-06-22
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公开(公告)号: US10910475B2公开(公告)日: 2021-02-02
- 发明人: Nico Caspary , Hans-Joachim Schulze
- 申请人: Infineon Technologies AG
- 申请人地址: DE Neubiberg
- 专利权人: Infineon Technologies AG
- 当前专利权人: Infineon Technologies AG
- 当前专利权人地址: DE Neubiberg
- 代理机构: Murphy, Bilak & Homiller, PLLC
- 优先权: DE102014107590 20140528
- 主分类号: H01L29/36
- IPC分类号: H01L29/36 ; C30B15/00 ; C30B29/06 ; H01L29/16 ; H01L29/167 ; H01L29/739 ; H01L29/66 ; H01L29/861 ; H01L29/78 ; H01L29/08 ; C30B15/04 ; C30B15/20 ; C30B33/00
摘要:
A method of manufacturing a silicon wafer includes extracting an n-type silicon ingot over an extraction time period from a silicon melt comprising n-type dopants, adding p-type dopants to the silicon melt over at least part of the extraction time period, so as to compensate an n-type doping in the n-type silicon ingot by 20% to 80%, and slicing the silicon ingot.
公开/授权文献
- US20160305040A1 Method of Manufacturing a Silicon Wafer 公开/授权日:2016-10-20
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