- 专利标题： Memory device having common source lines coupled to memory blocks respectively and operating method thereof
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申请号： US15850357申请日： 2017-12-21
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公开(公告)号： US10535405B2公开(公告)日： 2020-01-14
- 发明人: Nam Jae Lee
- 申请人： SK hynix Inc.
- 申请人地址： KR Icheon-si, Gyeonggi-do
- 专利权人： SK hynix Inc.
- 当前专利权人： SK hynix Inc.
- 当前专利权人地址： KR Icheon-si, Gyeonggi-do
- 代理机构： William Park & Associates Ltd.
- 优先权： KR10-2017-0089602 20170714
- 主分类号： G11C16/08
- IPC分类号： G11C16/08 ; G11C16/04 ; G11C16/10 ; G11C16/26 ; G11C16/30 ; H01L27/1157 ; G11C16/16 ; H01L27/11575 ; H01L27/11565 ; H01L27/11582 ; H01L27/11524 ; H01L27/11556
摘要：
A memory device and an operating method thereof are provided. A memory device may include a plurality of source lines coupled to a memory block. The memory device may include a plurality of strings coupled to each of the source lines. The memory device may include a row decoder configured to selectively transmit voltages to local lines corresponding to a selected source line among the source lines.
公开/授权文献
- US20190019558A1 MEMORY DEVICE AND OPERATING METHOD THEREOF 公开/授权日：2019-01-17
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