A semiconductor device includes: a drift region formed in a semiconductor substrate; a body region above the drift region; an active gate trench extending from a first main surface and into the body region and including a first electrode coupled to a gate potential; a source region formed in the body region adjacent to the gate trench and coupled to a source potential; a first body trench extending from the first main surface and into the body region and including a second electrode coupled to the source potential; and an inactive gate trench extending from the first main surface and into the body region and including a third electrode coupled to the gate potential. A conductive channel is present along the active gate trench when the gate potential is at an on-voltage, whereas no conductive channel is present along the inactive gate trench for the same gate potential condition.