Invention Grant
- Patent Title: Method of maintaining the state of semiconductor memory having electrically floating body transistor
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Application No.: US16200997Application Date: 2018-11-27
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Publication No.: US10340276B2Publication Date: 2019-07-02
- Inventor: Yuniarto Widjaja , Zvi Or-Bach
- Applicant: Zeno Semiconductor, Inc.
- Applicant Address: US CA Sunnyvale
- Assignee: Zeno Semiconductor, Inc.
- Current Assignee: Zeno Semiconductor, Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Alan W. Cannon
- Main IPC: G11C14/00
- IPC: G11C14/00 ; H01L27/108 ; H01L29/772 ; H01L29/66 ; H01L29/78 ; G11C11/404 ; H01L29/10 ; G11C11/4096 ; G11C11/4094 ; G11C11/4074 ; G11C7/22 ; H01L29/788 ; H01L23/528 ; G11C11/39 ; G11C11/4099 ; H01L27/102 ; H01L29/08 ; G11C11/402 ; G11C11/04
Abstract:
Methods of maintaining a state of a memory cell without interrupting access to the memory cell are provided, including applying a back bias to the cell to offset charge leakage out of a floating body of the cell, wherein a charge level of the floating body indicates a state of the memory cell; and accessing the cell.
Public/Granted literature
- US20190096889A1 Method of Maintaining the State of Semiconductor Memory Having Electrically Floating Body Transistor Public/Granted day:2019-03-28
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