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发明授权
CN104659050B RRAM器件的顶电极阻挡层 有权

RRAM器件的顶电极阻挡层
摘要：
一种集成电路器件包括：形成在衬底上方的电阻式随机存取存储器(RRAM)单元。RRAM单元包括具有上表面的顶电极。阻挡层覆盖上表面的一部分。通孔延伸在电介质的基质内的顶电极之上。顶电极的上表面包括与阻挡层交界的区域和与通孔交界的区域。与通孔交界的上表面的区域环绕与阻挡层交界的上表面的区域。当以这种方式构建时，在加工期间，阻挡层用以保护RRAM单元不受蚀刻破坏，从而不干扰上面的通孔和顶电极之间的接触。本发明包括RRAM器件的顶电极阻挡层。
摘要（英）：

An integrated circuit device including a resistive random access memory (RRAM) cell formed over a substrate. The RRAM cell includes a top electrode having an upper surface. A blocking layer covers a portion of the upper surface. A via extends above the top electrode within a matrix of dielectric. The upper surface of the top electrode includes an area that interfaces with the blocking layer and an area that interfaces with the via. The area of the upper surface that interfaces with the via surrounds the area of the upper surface that interfaces with the blocking layer. The blocking layer is functional during processing to protect the RRAM cell from etch damage while being structured in such a way as to not interfere with contact between the overlying via and the top electrode.

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