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公开(公告)号：US20240313756A1
公开(公告)日：2024-09-19
申请号：US18022633
申请日：2022-09-08
发明人： Ziqi ZHANG , Ni SUN , Song HUANG
CPC分类号： H03K17/063 , H02J7/007182 , H03K2017/0806 , H03K2217/0036
摘要： A switch circuit and an electronic device are provided. The switch circuit includes an external node, an internal node, an enhancement-mode gallium-nitride high-electron-mobility transistor, and a driver module. The enhancement-mode gallium-nitride high-electron-mobility transistor includes a first gate electrode, a first electrode, and a second electrode. The driver module includes a control terminal. The first gate electrode is coupled to the control terminal, the first electrode is coupled to the external node, and the internal node is coupled to the second electrode. The external node receives a charging voltage, and the driver module controls on or off of the enhancement-mode gallium-nitride high-electron-mobility transistor. When the enhancement-mode gallium-nitride high-electron-mobility transistor is turned on, the charging voltage is transmitted to the internal node. Alternatively, the internal node receives a charging voltage, and the driver module controls on or off of the enhancement-mode gallium-nitride high-electron-mobility transistor.
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公开(公告)号：US20240272012A1
公开(公告)日：2024-08-15
申请号：US18569327
申请日：2022-07-01
申请人： Robert Bosch Gmbh
发明人： Jonathan WINKLER , Manuel Riefer
IPC分类号： G01K7/01 , H03K17/08 , H03K17/0812
CPC分类号： G01K7/01 , H03K17/08122 , G01K2217/00 , H03K2017/0806
摘要： A circuit arrangement, an electrical system, and a method for determining barrier layer temperatures of gate-controlled semiconductor components. First and second semiconductor components of the circuit arrangement are connected in parallel and activated using a gate control circuit which, in an active forward mode of the two semiconductor components, varies a first gate voltage of the first semiconductor component using a first signal, and to varies a second gate voltage of the second semiconductor component using a second signal that is opposite the first signal. An evaluation unit of the circuit arrangement is configured to use first and second current measuring devices to measure first and second gate currents of the first and second semiconductor components, respectively, and to determine in each case, based on the particular varied gate voltages and the respective corresponding gate currents, respective barrier layer temperatures of the two semiconductor component.
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公开(公告)号：US12046993B2
公开(公告)日：2024-07-23
申请号：US18089802
申请日：2022-12-28
发明人： Kei Minagawa
IPC分类号： H02M1/32 , H03K17/082 , H03K17/08
CPC分类号： H02M1/327 , H03K17/0822 , H03K17/0828 , H03K2017/0806
摘要： A semiconductor device having a load. The semiconductor device including: an output element configure to connect to the load, the output element being switchable to operate the load; a drive circuit which outputs a drive signal for driving the output element to switch; a detection circuit which compares a state signal, indicative of an operating state of the output element, with a detection threshold, to thereby detect an abnormal level of the operating state; an abnormal level notification circuit which informs an outside of the detected abnormal level; an external terminal configured to receive an external signal for adjusting the detection threshold; and a detection threshold adjustment circuit which adjusts the detection threshold on a basis of the received external signal.
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公开(公告)号：US11916545B2
公开(公告)日：2024-02-27
申请号：US17296868
申请日：2019-12-19
发明人： Benno Weis , Fabian Diepold
IPC分类号： H03K17/14 , G01R19/175 , H03K17/30 , H03K17/08 , G01R19/165
CPC分类号： H03K17/145 , G01R19/16538 , G01R19/175 , H03K17/302 , H03K2017/0806
摘要： A method for operating a normally off or normally on power semiconductor element. A threshold voltage change in a threshold voltage of the power semiconductor element in relation to a reference threshold voltage is determined. A switch-on gate voltage is applied between a gate terminal and a source terminal of the power semiconductor element for the purpose of switching on the power semiconductor element is changed by the threshold voltage change in relation to a reference switch-on gate voltage corresponding to the reference threshold voltage.
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5.发明授权公开(公告)号：US11888466B2
公开(公告)日：2024-01-30
申请号：US17653582
申请日：2022-03-04
发明人： Koutaro Miyazaki
CPC分类号： H03K17/08 , H02H1/0007 , H03K5/24 , G05F1/562 , G05F1/573 , H03K2005/00013
摘要： According to one embodiment, electronic circuitry includes: a detection circuit including a diode, a cathode side of the diode being connected to one end of a semiconductor switching element and an anode side of the diode being connected to a first node; a comparator circuit configured to compare a voltage of the first node and a threshold voltage and generate a first signal; a first filter connected between the first node and another end of the semiconductor switching element and configured to suppress the voltage of the first node in a first period based on a control signal indicating turn-on of the semiconductor switching element; and a control circuit configured to determine at least one of the threshold voltage and the first period based on the first signal.
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公开(公告)号：US11855613B2
公开(公告)日：2023-12-26
申请号：US17828581
申请日：2022-05-31
发明人： Chin-Hua Wen
IPC分类号： H03K19/0175 , H03K17/08 , H03F3/45 , H03K19/0185 , H03K5/24
CPC分类号： H03K17/08 , H03F3/45269 , H03K19/017545 , H03K19/018557 , H03K5/24
摘要： A post-driver with low voltage operation and electrostatic discharge protection. In one embodiment, a post-driver structure includes a drive unit including a pull-up driver and a pull-down driver, a pad connected to an external resistance, and an output node connected between the pull-up driver and the pull-down driver, the output node configured to connect to a comparator for impedance calibration of the drive unit. The post-driver structure also includes an operational amplifier connected to a first transistor and the pad in a closed loop configuration, the operational amplifier further connected to a second transistor to form a current mirror circuit between the operational amplifier and the drive unit, wherein the current mirror circuit replicates a voltage at the pad with a voltage at the output node for the impedance calibration.
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公开(公告)号：US11831307B2
公开(公告)日：2023-11-28
申请号：US17659854
申请日：2022-04-20
发明人： Zhong Ye , Danyang Zhu
IPC分类号： H03K3/00 , H03K17/08 , H03K19/00 , H03K17/567 , H03K17/0812
CPC分类号： H03K17/567 , H03K17/08122
摘要： An apparatus includes a capacitor coupled to a gate of a power switch, and a negative voltage adjustment device connected to a common node of the capacitor and the gate of the power switch, wherein the negative voltage adjustment device is configured such that after a turn-off signal is applied to the gate of the power switch, a voltage across the capacitor is maintained at a predetermined voltage level through a negative current provided by the negative voltage adjustment device.
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公开(公告)号：US20230353136A1
公开(公告)日：2023-11-02
申请号：US17731911
申请日：2022-04-28
摘要： A system in a vehicle includes a first fuse connected between a power source and a load. The first fuse is an electronic fuse (eFuse) to disconnect the load from the power source via the first fuse based on opening a first fuse switch. The system also includes a second fuse connected between the power source and the load via a second fuse switch. The first fuse and the second fuse are part of a cluster of fuses. A controller opens the first fuse switch and keeps the second fuse switch closed based on the vehicle entering a key-off mode in which the vehicle is turned off.
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9.发明公开公开(公告)号：US20230283273A1
公开(公告)日：2023-09-07
申请号：US17683804
申请日：2022-03-01
CPC分类号： H03K17/08 , H02H1/0007 , H02H9/02
摘要： A method for driving a power transistor includes comparing a measurement signal that is representative of a load current to a comparator threshold that corresponds to an overcurrent threshold; generating a first fault signal when the measurement signal exceeds the comparator threshold for a first time interval; generating a second fault signal when the measurement signal exceeds the comparator threshold for a second time interval that is greater than the first time interval; regulating a control voltage provided to the control terminal of the transistor to turn off the transistor in response to the second fault signal; and in response to the first fault signal, adjusting the control voltage to an adjusted voltage level in order to limit the load current to a reduced current level that is preconfigured to be greater than the overcurrent threshold. The adjusted voltage level is sufficient to maintain the power transistor in an on-state.
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公开(公告)号：US20230266403A1
公开(公告)日：2023-08-24
申请号：US17678953
申请日：2022-02-23
发明人： Gaudenzia BAGNATI
摘要： A device includes a driver circuit and diagnostic circuitry coupled to the driver circuit. The diagnostic circuitry includes an on-state diagnostic circuit and an off-state diagnostic circuit. The diagnostic circuitry, in operation: generates a configuration signal associated with an operative condition of the driver circuit based on a comparator output of the off-state diagnostic circuit; diagnoses conditions associated with the driver circuit; and controls operation of the on-state diagnostic circuit based on the configuration signal.
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