- 专利标题: Operating a power semiconductor element
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申请号: US17296868申请日: 2019-12-19
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公开(公告)号: US11916545B2公开(公告)日: 2024-02-27
- 发明人: Benno Weis , Fabian Diepold
- 申请人: Siemens Aktiengesellschaft
- 申请人地址: DE Munich
- 专利权人: Siemens Aktiengesellschaft
- 当前专利权人: Siemens Aktiengesellschaft
- 当前专利权人地址: DE Munich
- 代理机构: Henry M. Felereisen LLC
- 优先权: EP 248049 2018.12.27
- 国际申请: PCT/EP2019/086150 2019.12.19
- 国际公布: WO2020/136066A 2020.07.02
- 进入国家日期: 2021-05-25
- 主分类号: H03K17/14
- IPC分类号: H03K17/14 ; G01R19/175 ; H03K17/30 ; H03K17/08 ; G01R19/165
摘要:
A method for operating a normally off or normally on power semiconductor element. A threshold voltage change in a threshold voltage of the power semiconductor element in relation to a reference threshold voltage is determined. A switch-on gate voltage is applied between a gate terminal and a source terminal of the power semiconductor element for the purpose of switching on the power semiconductor element is changed by the threshold voltage change in relation to a reference switch-on gate voltage corresponding to the reference threshold voltage.
公开/授权文献
- US20220021383A1 OPERATING A POWER SEMICONDUCTOR ELEMENT 公开/授权日:2022-01-20
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