公开(公告)号：US12237648B2

公开(公告)日：2025-02-25

申请号：US18399844

申请日：2023-12-29

Applicant: Lumentum Operations LLC

Inventor： Benjamin Kesler

IPC: H01S5/00 ,  H01S5/183 ,  H01S5/20 ,  H01S5/30 ,  H01S5/34 ,  H01S5/42

Abstract: In some implementations, a vertical cavity surface emitting laser (VCSEL) device includes a substrate layer and a first set of epitaxial layers for a bottom-emitting VCSEL disposed on the substrate layer. The first set of epitaxial layers may include a first set of mirrors and at least one first active layer. The VCSEL device may include a second set of epitaxial layers for a top-emitting VCSEL disposed on the first set of epitaxial layers for the bottom-emitting VCSEL. The second set of epitaxial layers may include a second set of mirrors and at least one second active layer. The top-emitting VCSEL and the bottom-emitting VCSEL may be configured to emit light in opposite light emission directions.

公开(公告)号：US12199408B2

公开(公告)日：2025-01-14

申请号：US17494815

申请日：2021-10-05

Applicant: SEIKO EPSON CORPORATION ,  SOPHIA SCHOOL CORPORATION

Inventor： Hiroki Nishioka ,  Katsumi Kishino

IPC: H01S5/343 ,  H01S5/11 ,  H01S5/30 ,  H01S5/34 ,  G03B21/20 ,  H01S5/125

Abstract: A light emitting apparatus includes a laminated structure including a plurality of columnar section assemblies each formed of p columnar sections. The p columnar sections each include a light emitting layer. When viewed in the lamination direction of the laminated structure, the ratio of the maximum width to the minimum width of the light emitting layer in each of q first columnar sections out of the p columnar sections is greater than the ratio of the light emitting layer in each of r second columnar sections out of the p columnar sections. The light emitting layer in each of the p columnar sections does not have a rotationally symmetrical shape. The parameter p is an integer greater than or equal to 2. The parameter q is an integer greater than or equal to 1 but smaller than p. The parameter r is an integer that satisfies r=p−q.

公开(公告)号：US12191634B2

公开(公告)日：2025-01-07

申请号：US17487405

申请日：2021-09-28

Applicant: Nuvoton Technology Corporation Japan

Inventor： Kazuya Yamada ,  Tougo Nakatani ,  Hiroki Nagai ,  Masayuki Hata

IPC: H01S5/16 ,  H01S5/32 ,  H01S5/20 ,  H01S5/34

Abstract: A semiconductor laser element includes: a first conductivity-type cladding layer; a first guide layer disposed above the first conductivity-type cladding layer; an active layer disposed above the first guide layer; and a second conductivity-type cladding layer disposed above the active layer. A window region is formed in a region of the active layer including part of at least one of the front-side end face or the rear-side end face, the first conductivity-type cladding layer consists of (AlxGa1-x)0.5In0.5P, the first guide layer consists of (AlyGa1-y)0.5In0.5P, and the second conductivity-type cladding layer consists of (AlzGa1-z)0.5In0.5P, where x, y, and z each denote an Al composition ratio, 0 0.03 is satisfied, where L denotes a length of the resonator and D denotes a length of the window region in the first direction.

公开(公告)号：US20240413615A1

公开(公告)日：2024-12-12

申请号：US18700637

申请日：2022-01-24

Applicant: Mitsubishi Electric Corporation

Inventor： Kimio SHIGIHARA

IPC: H01S5/34 ,  H01S5/343

Abstract: The present disclosure is a method for manufacturing a quantum cascade laser device comprising the steps of: virtually injecting electrons having an energy value from zero to an energy value of a conduction band edge of the well layer into a starting barrier layer; calculating energy dependence of transmissivity of the electrons transmitted from the terminal barrier layer; calculating energy values of local maximum values and the number of the local maximum values; calculating eigenvalues and eigenfunctions by solving a Schrödinger equation for each local maximum value by using each energy value of the local maximum values as an initial value; and setting a laser oscillation wavelength on the basis of the eigenvalues calculated for each of the local maximum values.

公开(公告)号：US20240380178A1

公开(公告)日：2024-11-14

申请号：US18780279

申请日：2024-07-22

Applicant: II-VI Delaware, Inc.

Inventor： Jean Axel Edmond TEISSIER ,  Wilfried MAINEULT ,  Ludovic Maurice Emile MARIGO

IPC: H01S5/183 ,  H01S5/34

Abstract: A vertical cavity surface emitting laser (VCSEL) may include an active region (e.g., one or more quantum wells) and a chirped pattern reflector. The active region may be configured to be electrically pumped such that the active region generates light having a fundamental mode and a higher order mode. The chirped pattern reflector may include a first portion presenting to the active region as a first portion of an effective mirror having a concave shape and a second portion presenting to the active region as a second portion of the effective mirror having a convex shape.

公开(公告)号：US20240372035A1

公开(公告)日：2024-11-07

申请号：US18761059

申请日：2024-07-01

Applicant: Silanna UV Technologies Pte Ltd

Inventor： Petar Atanackovic

IPC: H01L33/26 ,  H01L21/02 ,  H01L23/66 ,  H01L27/15 ,  H01L29/15 ,  H01L29/20 ,  H01L29/24 ,  H01L29/267 ,  H01L29/51 ,  H01L29/66 ,  H01L29/778 ,  H01L29/786 ,  H01L33/00 ,  H01L33/06 ,  H01L33/16 ,  H01L33/18 ,  H01L33/62 ,  H01S5/34

Abstract: The techniques described herein relate to semiconductor structures, in some cases including epitaxial oxide heterostructures. An epitaxial oxide heterostructure can include a substrate, a first epitaxial oxide layer, and a second epitaxial oxide layer. The first epitaxial oxide layer can include a first epitaxial oxide material, where the first epitaxial oxide material includes: at least one of magnesium, nickel, and zinc; at least one of aluminum and gallium; and oxygen. The second epitaxial oxide layer can include a second epitaxial oxide material, where the second epitaxial oxide material includes: at least one of magnesium, nickel, and zinc; at least one of aluminum and gallium; and oxygen. The first epitaxial oxide material can have a first composition that is different from a second composition of the second epitaxial oxide material.

公开(公告)号：US12119613B2

公开(公告)日：2024-10-15

申请号：US16985916

申请日：2020-08-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi Sugiyama ,  Akio Ito ,  Tadataka Edamura

IPC: H01S5/028 ,  G02B1/113 ,  H01S5/16 ,  H01S5/34 ,  H01S5/12 ,  H01S5/22

CPC classification number: H01S5/0287 ,  G02B1/113 ,  H01S5/166 ,  H01S5/3402 ,  H01S5/12 ,  H01S5/22

Abstract: A sintered body of the present invention includes cerium oxide and cerium fluoride or yttrium fluoride.

公开(公告)号：US20240332910A1

公开(公告)日：2024-10-03

申请号：US18572689

申请日：2023-05-29

Applicant: SUZHOU EVERBRIGHT PHOTONICS CO., LTD. ,  EVERBRIGHT INSTITUTE OF SEMICONDUCTOR PHOTONICS CO., LTD.

Inventor： Jun WANG ,  Shaoyang TAN ,  Li ZHOU ,  Yang CHENG ,  Xiao XIAO ,  Yintao GUO ,  Hao YU ,  Quanling LI ,  Xinsheng LIAO ,  Dayong MIN

IPC: H01S5/34 ,  H01S5/343

CPC classification number: H01S5/3403 ,  H01S5/3407 ,  H01S5/3434 ,  H01S5/34353 ,  H01S5/3436

Abstract: A high-efficiency active layer includes a strained quantum well layer and, at one side thereof, a first strained barrier layer configured to transport electrons. The first strained barrier layer and the strained quantum well layers are configured to form strain compensation. A second barrier layer is positioned on the other side of the strained quantum well layer and is configured to transport holes. A band offset between conduction bands of the first strained barrier layer and of the strained quantum well layer is less than a band offset between valence bands of the strained quantum well layer and of the first strained barrier layer. A band offset between valence bands of the strained quantum well layer and of the second barrier layer is less than a band offset between conduction bands of the second barrier layer and of the strained quantum well layer. Light-emitting efficiency and reliability are improved.

公开(公告)号：US20240313509A1

公开(公告)日：2024-09-19

申请号：US18575153

申请日：2022-06-30

Applicant: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE ,  UNIVERSITE DE MONTPELLIER

Inventor： Jean Baptiste RODRIGUEZ ,  Alexei BARANOV ,  Laurent CERUTTI ,  Eric TOURNIE

IPC: H01S5/343 ,  H01S5/02 ,  H01S5/34

CPC classification number: H01S5/34346 ,  H01S5/0218 ,  H01S5/3422

Abstract: The invention relates to an optoelectronic component (1) that is insensitive to dislocations, comprising:
a semiconductor heterostructure (2) able to emit laser radiation, said semiconductor heterostructure being formed from first semiconductors comprising a cascade of gain-providing active regions (21) in which the inter-band radiative transition is of type II, and
a carrier structure (30) comprising a non-native substrate (3) different from the first semiconductors, said semiconductor heterostructure (2) being formed by epitaxial growth on the carrier structure (30),
wherein the active regions have a dislocation density higher than 107 .cm−2.

公开(公告)号：US12076080B2

公开(公告)日：2024-09-03

申请号：US17338395

申请日：2021-06-03

Applicant: UNIVERSITY OF IOWA RESEARCH FOUNDATION

Inventor： Fatima Toor

IPC: A61B18/20 ,  A61B18/22 ,  A61B90/00 ,  H01S5/34 ,  A61B18/00

CPC classification number: A61B18/22 ,  A61B90/36 ,  H01S5/3401 ,  A61B2018/00577 ,  A61B2018/2015 ,  A61B2018/2035 ,  A61B2018/2233

Abstract: An apparatus and method of treatment of an animal using the apparatus are disclosed. The apparatus includes a scalpel, a laser included in the scalpel, and a visible light source included in the scalpel. The visible light source provides a visible targeting beam. The method of treatment includes activating a visible targeting beam in a laser scalpel. The visible targeting beam has an illumination intensity. The method further includes illuminating a tumor that includes cancerous cells and non-cancerous cells with the visible targeting beam, activating an invisible mid-infrared laser included in the scalpel to produce a laser spot at the tumor, and ablating the cancerous cells while leaving the non-cancerous cells substantially undamaged.