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公开(公告)号:US20240023440A1
公开(公告)日:2024-01-18
申请号:US17865610
申请日:2022-07-15
Inventor: Yakubu Sani WUDIL , Mohammed A. GONDAL
CPC classification number: H01L35/34 , C01G19/006 , H01L35/26 , C01P2006/40 , C01P2006/32 , C01P2002/34 , C01P2002/76 , C01P2002/77
Abstract: A method of making a CsSnI3 perovskite thermoelectric (TE) material including mixing a fatty acid, a fatty amine, a C8-C30 hydrocarbon, and CsCO3 in a vessel to form a cesium mixture; heating the cesium mixture to a temperature of 400-450 K to form a heated mixture; dissolving SnI2 in an organophosphine to form a tin solution; mixing the tin solution and the heated mixture to form a reaction mixture; cooling the reaction mixture to form a precipitate comprising a CsSnI3 perovskite; enclosing the CsSnI3 perovskite in a chamber; pressurizing the chamber to a hydrostatic pressure of at least 0.1 GPa; and heating the chamber to a temperature of 300-1,000 K to form the CsSnI3 perovskite TE material having a ZT that is at least 0.1.
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公开(公告)号:US11631795B2
公开(公告)日:2023-04-18
申请号:US16486341
申请日:2018-02-16
Applicant: Wake Forest University
Inventor: David L. Carroll , Chaochao Dun , Corey Hewitt , Robert Summers
Abstract: Composite nanoparticle compositions and associated nanoparticle assemblies are described herein which, in some embodiments, exhibit enhancements to one or more thermoelectric properties including increases in electrical conductivity and/or Seebeck coefficient and/or decreases in thermal conductivity. In one aspect, a composite nanoparticle composition comprises a semiconductor nanoparticle including a front face and a back face and sidewalls extending between the front and back faces. Metallic nanoparticles are bonded to at least one of the sidewalls establishing a metal-semiconductor junction.
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公开(公告)号:US20230111527A1
公开(公告)日:2023-04-13
申请号:US17497629
申请日:2021-10-08
Applicant: AIC Spolka Akcyjna
Inventor: Tomasz SIEMIENCZUK , Wojciech GULBINSKI , Ariel Lewandowski
Abstract: A thermoelectric coating containing “p” and “n” semiconductor elements in the form of non-contacting layers, which are arranged alternately with each other, so that between the “p” layers there is a “n” layer, with the “p” and “n” layers “n” are connected to each other in series with conductive elements with connection terminals for the output of the generated electrical energy, and containing an electrical insulator layer, is characterized in that a layer (2a) of an electrical insulator with a thickness of at least 200 nm is applied to the substrate (1), with layers of conductive elements (3a) with a thickness of 200 nm to 5 µm, on which semiconductor layers “p” and “n” with a thickness of 50 nm to 5 µm and a width of 0.1 mm to 5 mm are applied.
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公开(公告)号:US11621385B2
公开(公告)日:2023-04-04
申请号:US16978251
申请日:2019-03-07
Applicant: RGS Development B.V.
Abstract: A thermoelectric device includes active elements containing thermoelectric materials of silicon, an alloy of silicon, a metal-silicide or silicon composite and an interconnection zone consisting of a metal interconnect and a re-crystallized phase consisting of material from the active thermoelectric elements. The metal interconnect is from a metal that does not form metal silicides in a solid state, has a certain solubility for components of the thermoelectric elements in the liquid phase and a low solubility of these components in the solid phase. The active thermoelectric elements are shaped with a first and a second contact interface. The interconnection between the different thermoelectric elements consists of at least two phases of material, one of which is mainly the metallic interconnection material, the other is formed by the re-crystallized components of the thermoelectric materials.
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公开(公告)号:US20230087516A1
公开(公告)日:2023-03-23
申请号:US17931482
申请日:2022-09-12
Applicant: STMICROELECTRONICS S.R.L.
Inventor: Enri DUQI , Maria Eloisa CASTAGNA
Abstract: Integrated thermal sensor having a housing delimiting an internal space. A support region extends through the internal space; a plurality of thermocouple elements are carried by the support region and are electrically coupled to each other. Each thermocouple element is formed by a first and a second thermoelectrically active region of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions is a silicon-based material. The first and second thermoelectrically active regions of each thermocouple element are formed by respective elongated regions extending at a mutual distance into the internal space of the housing, from and transversely to the support region.
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公开(公告)号:US11611028B2
公开(公告)日:2023-03-21
申请号:US16078459
申请日:2017-03-03
Applicant: LG INNOTEK CO., LTD.
Inventor: Tae Hee Kim
Abstract: A thermoelectric device and a manufacturing method thereof according to one embodiment of the present invention are disclosed. The thermoelectric device includes a plurality of upper electrodes and a plurality of lower electrodes, and an N-type thermoelectric material and a P-type thermoelectric material which are electrically connected, alternately arranged between the upper electrodes and the lower electrodes, and obliquely disposed on the lower electrode.
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公开(公告)号:US20230043333A1
公开(公告)日:2023-02-09
申请号:US17758727
申请日:2021-01-14
Inventor: Guillaume SAVELLI , Charlotte BRYAN , Rene ESCOFFIER , Marc PLISSONNIER
Abstract: An electronic component may include a carrier, and a thermoelectric sensor and a power transistor which are arranged on the carrier. The power transistor may include a base layer containing a transistor material chosen from among gallium nitride, aluminium gallium nitride, gallium arsenide, indium gallium, indium gallium nitride, aluminium nitride, indium aluminium nitride, and mixtures thereof. The electronic component may be configured so that the thermoelectric sensor generates an electric current under the effect of heating from the power transistor.
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公开(公告)号:US20230006122A1
公开(公告)日:2023-01-05
申请号:US17854343
申请日:2022-06-30
Applicant: CRH Nederland B.V.
Inventor: Diego A. SANTAMARIA RAZO , José Amir GONZÁLEZ CALDERÓN
Abstract: The present invention relates to a concrete composite comprising concrete and a thermoelectric material, wherein the thermoelectric material comprises a complex sulphide mineral, wherein the composite comprises at least 20 wt % concrete.
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公开(公告)号:US11538974B2
公开(公告)日:2022-12-27
申请号:US16084057
申请日:2017-03-17
Applicant: MITSUBISHI MATERIALS CORPORATION
Inventor: Yoshinobu Nakada , Koya Arai , Masahito Komasaki
Abstract: A magnesium-based thermoelectric conversion material includes a first layer formed of Mg2Si and a second layer formed of Mg2SixSn1-x (here, x is equal to or greater than 0 and less than 1), in which the first layer and the second layer are directly joined to each other, and within a junction surface with the first layer and in the vicinity of the junction surface, the second layer has a tin concentration transition region in which a tin concentration increases as a distance from the junction surface increases. The junction layer is regarded as a site in which a tin concentration is found to be equal to or lower than a detection limit by the measurement performed using EDX.
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公开(公告)号:US11527694B2
公开(公告)日:2022-12-13
申请号:US16975466
申请日:2019-02-18
Inventor: Hiroshi Goto , Minoru Sakata , Ryutaro Maeda , Jian Lu
Abstract: A thermoelectric element to convert thermal energy into electrical energy includes a first electrode part, a second electrode part having a different work function than the first electrode part and arranged at a distance from the first electrode part, on a same surface of a substrate as the first electrode part, and a middle part provided between the first electrode part and the second electrode part.
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