THERMOELECTRIC COATING AND THE METHOD OF ITS APPLICATION, ESPECIALLY ON THE ELEMENTS OF THE HEAT EXCHANGER

    公开(公告)号:US20230111527A1

    公开(公告)日:2023-04-13

    申请号:US17497629

    申请日:2021-10-08

    Abstract: A thermoelectric coating containing “p” and “n” semiconductor elements in the form of non-contacting layers, which are arranged alternately with each other, so that between the “p” layers there is a “n” layer, with the “p” and “n” layers “n” are connected to each other in series with conductive elements with connection terminals for the output of the generated electrical energy, and containing an electrical insulator layer, is characterized in that a layer (2a) of an electrical insulator with a thickness of at least 200 nm is applied to the substrate (1), with layers of conductive elements (3a) with a thickness of 200 nm to 5 µm, on which semiconductor layers “p” and “n” with a thickness of 50 nm to 5 µm and a width of 0.1 mm to 5 mm are applied.

    Thermoelectric conversion device and method for manufacturing the same

    公开(公告)号:US11621385B2

    公开(公告)日:2023-04-04

    申请号:US16978251

    申请日:2019-03-07

    Abstract: A thermoelectric device includes active elements containing thermoelectric materials of silicon, an alloy of silicon, a metal-silicide or silicon composite and an interconnection zone consisting of a metal interconnect and a re-crystallized phase consisting of material from the active thermoelectric elements. The metal interconnect is from a metal that does not form metal silicides in a solid state, has a certain solubility for components of the thermoelectric elements in the liquid phase and a low solubility of these components in the solid phase. The active thermoelectric elements are shaped with a first and a second contact interface. The interconnection between the different thermoelectric elements consists of at least two phases of material, one of which is mainly the metallic interconnection material, the other is formed by the re-crystallized components of the thermoelectric materials.

    INTEGRATED THERMAL SENSOR AND MANUFACTURING PROCESS THEREOF

    公开(公告)号:US20230087516A1

    公开(公告)日:2023-03-23

    申请号:US17931482

    申请日:2022-09-12

    Abstract: Integrated thermal sensor having a housing delimiting an internal space. A support region extends through the internal space; a plurality of thermocouple elements are carried by the support region and are electrically coupled to each other. Each thermocouple element is formed by a first and a second thermoelectrically active region of a first and, respectively, a second thermoelectrically active material, the first thermoelectrically active material having a first Seeback coefficient, the second thermoelectrically active material having a second Seeback coefficient, other than the first Seeback coefficient. At least one of the first and second thermoelectrically active regions is a silicon-based material. The first and second thermoelectrically active regions of each thermocouple element are formed by respective elongated regions extending at a mutual distance into the internal space of the housing, from and transversely to the support region.

    Thermoelectric device and manufacturing method therefor

    公开(公告)号:US11611028B2

    公开(公告)日:2023-03-21

    申请号:US16078459

    申请日:2017-03-03

    Inventor: Tae Hee Kim

    Abstract: A thermoelectric device and a manufacturing method thereof according to one embodiment of the present invention are disclosed. The thermoelectric device includes a plurality of upper electrodes and a plurality of lower electrodes, and an N-type thermoelectric material and a P-type thermoelectric material which are electrically connected, alternately arranged between the upper electrodes and the lower electrodes, and obliquely disposed on the lower electrode.

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