公开(公告)号：US11621385B2

公开(公告)日：2023-04-04

申请号：US16978251

申请日：2019-03-07

Applicant: RGS Development B.V.

Inventor： Axel Georg Schönecker ,  Pierre-Yves Pichon ,  Wilhelmus Gerardus Adrianus van Schaik

IPC: H01L35/08 ,  H01L35/22 ,  H01L35/34

Abstract: A thermoelectric device includes active elements containing thermoelectric materials of silicon, an alloy of silicon, a metal-silicide or silicon composite and an interconnection zone consisting of a metal interconnect and a re-crystallized phase consisting of material from the active thermoelectric elements. The metal interconnect is from a metal that does not form metal silicides in a solid state, has a certain solubility for components of the thermoelectric elements in the liquid phase and a low solubility of these components in the solid phase. The active thermoelectric elements are shaped with a first and a second contact interface. The interconnection between the different thermoelectric elements consists of at least two phases of material, one of which is mainly the metallic interconnection material, the other is formed by the re-crystallized components of the thermoelectric materials.