公开(公告)号：US12074030B2

公开(公告)日：2024-08-27

申请号：US17049496

申请日：2019-04-10

申请人： SONY SEMICONDUCTOR SOLUTIONS CORPORATION

发明人： Akiko Hirata ,  Masanaga Fukasawa

IPC分类号： H01L21/3065 ,  H01L21/30 ,  H01L21/465 ,  H01L29/24

CPC分类号： H01L21/3065 ,  H01L21/30 ,  H01L21/465 ,  H01L29/24

摘要： A first etching method of an oxide semiconductor film according to an embodiment of the present disclosure includes: forming a reduction layer in an oxide semiconductor film with use of a reducing gas; and sputtering the reduction layer with use of a rare gas.

公开(公告)号：US12062582B2

公开(公告)日：2024-08-13

申请号：US17084628

申请日：2020-10-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Li-Chao Yin ,  Hung-Bin Lin ,  Hsin-Hsien Wu ,  Chih-Ming Ke ,  Chyi Shyuan Chern ,  Ming-Hua Lo

IPC分类号： H01L21/66 ,  G03F7/00 ,  H01L21/30 ,  H01L21/322

CPC分类号： H01L22/12 ,  G03F7/70033 ,  G03F7/70616 ,  G03F7/70783 ,  H01L21/30 ,  H01L21/3228 ,  H01L22/20

摘要： In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.

公开(公告)号：US12020976B2

公开(公告)日：2024-06-25

申请号：US17212842

申请日：2021-03-25

申请人： EBARA CORPORATION

发明人： Haiyang Xu ,  Koji Maeda ,  Mitsuhiko Inaba

IPC分类号： H01L21/687 ,  B08B3/08 ,  B24B41/06 ,  H01L21/00 ,  H01L21/30 ,  H01L21/67 ,  H01L21/683

CPC分类号： H01L21/68742 ,  B08B3/08 ,  B24B41/06 ,  H01L21/00 ,  H01L21/30 ,  H01L21/67051 ,  H01L21/6838 ,  H01L21/68735

摘要： To detach a substrate from a table without damaging the substrate. According to Embodiment 1, provided is a substrate processing apparatus including a table to hold a substrate, a plurality of lift pins that are arranged at periphery of the table and configured to arrange or separate the substrate on or from the table and to be movable in a direction perpendicular to a surface of the table, a drive mechanism that includes a motor to move the lift pins in the direction perpendicular to the surface of the table, and a control device that is configured to control the drive mechanism. The control device is configured to be capable of moving the lift pins at a first speed and at a second speed different from the first speed.

公开(公告)号：US11854855B2

公开(公告)日：2023-12-26

申请号：US16919072

申请日：2020-07-01

申请人： X Display Company Technology Limited

发明人： Erich Radauscher ,  Ronald S. Cok ,  Christopher Andrew Bower ,  Matthew Alexander Meitl ,  James O. Thostenson

IPC分类号： H01L21/78 ,  H01L21/30 ,  H01L21/683 ,  H01L21/56 ,  H01L21/306 ,  H01L23/31 ,  H01L23/00 ,  H01L25/00 ,  H01L25/075 ,  G03F7/00 ,  H05K1/11 ,  B29C59/02

CPC分类号： H01L21/6835 ,  B29C59/026 ,  G03F7/0002 ,  H01L21/306 ,  H01L21/568 ,  H01L21/7806 ,  H01L23/3171 ,  H01L24/24 ,  H01L24/29 ,  H01L24/75 ,  H01L24/97 ,  H01L25/0753 ,  H01L25/50 ,  H05K1/111 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/95001 ,  H01L2224/951 ,  H01L2224/95136 ,  H01L2924/1815

摘要： An example of a method of micro-transfer printing comprises providing a micro-transfer printable component source wafer, providing a stamp comprising a body and spaced-apart posts, and providing a light source for controllably irradiating each of the posts with light through the body. Each of the posts is contacted to a component to adhere the component thereto. The stamp with the adhered components is removed from the component source wafer. The selected posts are irradiated through the body with the light to detach selected components adhered to selected posts from the selected posts, leaving non-selected components adhered to non-selected posts. In some embodiments, using the stamp, the selected components are adhered to a provided destination substrate. In some embodiments, the selected components are discarded. An example micro-transfer printing system comprises a stamp comprising a body and spaced-apart posts and a light source for selectively irradiating each of the posts with light.

公开(公告)号：US20230317461A1

公开(公告)日：2023-10-05

申请号：US18328660

申请日：2023-06-02

申请人： SK hynix Inc.

发明人： Dae Hee HAN ,  Sung Soon KIM

IPC分类号： H01L21/30 ,  H01L21/324 ,  H01L29/66

CPC分类号： H01L21/3003 ,  H01L21/324 ,  H01L29/66666

摘要： A method of manufacturing a semiconductor device includes forming a stack in which first material layers and second material layers are alternately stacked, forming a channel structure passing through the stack, forming openings by removing the first material layers, forming an amorphous blocking layer in the openings, and performing a first heat treatment process to supply deuterium through the openings and substitute hydrogen in the channel structure with the deuterium.

公开(公告)号：US20230264238A1

公开(公告)日：2023-08-24

申请号：US18138337

申请日：2023-04-24

申请人： Applied Materials, Inc.

发明人： Stephen D. Prouty ,  Martin Perez-Guzman ,  Sumanth Banda ,  Rajinder Dhindsa ,  Alvaro Garcia de Gorordo

IPC分类号： B08B9/08 ,  H01L21/683 ,  B08B5/00 ,  H01L21/30

CPC分类号： B08B9/08 ,  B08B5/00 ,  H01L21/30 ,  H01L21/6833 ,  B08B2209/08

摘要： Methods of semiconductor processing may include performing a process on a semiconductor substrate. The semiconductor substrate may be seated on a substrate support positioned within a processing region of a semiconductor processing chamber. The methods may include flowing a first backside gas through the substrate support at a first flow rate. The methods may include removing the semiconductor substrate from the processing region of the semiconductor processing chamber. The methods may include performing a plasma cleaning operation within the processing region of the semiconductor processing chamber. The methods may include flowing a second backside gas through the substrate support at a second flow rate. At least a portion of the second backside gas may flow into the processing region through accesses in the substrate support.

公开(公告)号：US11705338B2

公开(公告)日：2023-07-18

申请号：US17215566

申请日：2021-03-29

申请人： Unisantis Electronics Singapore Pte. Ltd.

发明人： Fujio Masuoka ,  Nozomu Harada

IPC分类号： H01L21/30 ,  H01L21/308 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L21/3085 ,  H01L21/02587 ,  H01L29/1054 ,  H01L29/66666

摘要： A band-shaped Si pillar having a mask material layer on the top portion thereof is formed on a P+ layer. SiGe layers having mask material layers on the top portions thereof are then formed in contact with the side surfaces of the band-shaped Si pillar and the surfaces of N+ layers and the P+ layer. Si layers having mask material layers on the top portions thereof are then formed in contact with the side surfaces of the SiGe layers and the surfaces of the N+ layers. The outer peripheries of the bottom portions of the Si layers are then removed using the mask material layers as a mask to form band-shaped Si pillars. The mask material layers and the SiGe layers are then removed. Si pillars separated in the Y direction are then formed in the band-shaped Si pillars.

公开(公告)号：US20230187212A1

公开(公告)日：2023-06-15

申请号：US17857473

申请日：2022-07-05

申请人： SK hynix Inc.

发明人： Se Ra Hwang

IPC分类号： H01L21/30 ,  H01L23/522 ,  H01L21/768

CPC分类号： H01L21/3003 ,  H01L23/5226 ,  H01L21/76829 ,  H01L21/76877 ,  H01L27/10814

摘要： A semiconductor device includes: a dielectric structure in which etch stop structures and low-k layers are alternately stacked over a substrate; and a metal interconnection electrically connected to the substrate in the dielectric structure, wherein each one of the etch stop structures includes: a first etch stop layer including a hydrogen blocking material; and a second etch stop layer formed over the first etch stop layer.

公开(公告)号：US11670513B2

公开(公告)日：2023-06-06

申请号：US17227327

申请日：2021-04-11

申请人： APPLIED MATERIALS, INC.

发明人： Yueh Sheng Ow ,  Junqi Wei ,  Wen Long Favier Shoo ,  Ananthkrishna Jupudi ,  Takashi Shimizu ,  Kelvin Boh ,  Tuck Foong Koh

IPC分类号： H01L21/02 ,  H01L21/30 ,  H01L21/683 ,  H01L21/67

CPC分类号： H01L21/3003 ,  H01L21/67017 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

摘要： Methods, apparatuses, and systems for substrate processing for lowering contact resistance in at least contact pads of a semiconductor device are provided herein. In some embodiments, a method of substrate processing for lowering contact resistance of contact pads includes: circulating a cooling fluid in at least one channel of a pedestal; and exposing a backside of the substrate located on the pedestal to a cooling gas to cool a substrate located on the pedestal to a temperature of less than 70 degrees Celsius. In some embodiments in accordance with the present principles, the method can further include distributing a hydrogen gas or hydrogen gas combination over the substrate.

公开(公告)号：US11587789B2

公开(公告)日：2023-02-21

申请号：US17123386

申请日：2020-12-16

申请人： Applied Materials, Inc.

发明人： Xinming Zhang ,  Abhilash J. Mayur ,  Shashank Sharma ,  Norman L. Tam ,  Matthew Spuller ,  Zeqiong Zhao

IPC分类号： H01L21/02 ,  H01L27/11556 ,  H01L21/30 ,  H01L27/11582

摘要： The present disclosure provides systems and methods for processing channel structures of substrates that include positioning the substrate in a first processing chamber having a first processing volume being in fluid communication with a plasma source. The substrate can include a channel structure with high aspect ratio features having aspect ratios greater than about 20:1. The method can also include forming an oxide cap layer over a silicon-containing layer of the channel structure and exposing the oxide cap layer to a hydrogen-or-deuterium radical to nucleate the silicon-containing layer of the channel structures of the substrate. Forming the oxide cap layer and exposing the channel structure with the hydrogen radical occurs in the first processing chamber to form a nucleated substrate. The method can also include positioning the nucleated substrate in a second processing chamber with a second processing volume and heating the nucleated substrate in the second processing chamber.