公开(公告)号：US20210217670A1

公开(公告)日：2021-07-15

申请号：US17084628

申请日：2020-10-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Li-Chao Yin ,  Hung-Bin Lin ,  Hsin-Hsien Wu ,  Chih-Ming Ke ,  Chyi Shyuan Chern ,  Ming-Hua Lo

IPC分类号： H01L21/66 ,  G03F7/20 ,  H01L21/322

摘要： In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.

公开(公告)号：US12062582B2

公开(公告)日：2024-08-13

申请号：US17084628

申请日：2020-10-30

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

发明人： Li-Chao Yin ,  Hung-Bin Lin ,  Hsin-Hsien Wu ,  Chih-Ming Ke ,  Chyi Shyuan Chern ,  Ming-Hua Lo

IPC分类号： H01L21/66 ,  G03F7/00 ,  H01L21/30 ,  H01L21/322

CPC分类号： H01L22/12 ,  G03F7/70033 ,  G03F7/70616 ,  G03F7/70783 ,  H01L21/30 ,  H01L21/3228 ,  H01L22/20

摘要： In a method, a structure including two or more materials having different coefficients of thermal expansion is prepared, and the structure is subjected to a cryogenic treatment. In one or more of the foregoing and following embodiments, the structure includes a semiconductor wafer and one or more layers are formed on the semiconductor wafer.