公开(公告)号：US12176453B2

公开(公告)日：2024-12-24

申请号：US18528920

申请日：2023-12-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Massimo Cataldo Mazzillo ,  Tim Boescke ,  Wolfgang Zinkl

IPC: H01L31/107 ,  H01L31/109 ,  H01L31/118

Abstract: An integrated photodetecting optoelectronic semiconductor component for detecting light bursts in a light signal received by the component includes a silicon photomultiplier for: measuring the intensity of the light signal received by the component, and outputting a measurement signal that is indicative of the light intensity of the received light signal. The component is characterised by a comparator circuit: having a first input section, a second input section and an output section, and operatively connected to the silicon photomultiplier via its first input section.

公开(公告)号：US20230261131A1

公开(公告)日：2023-08-17

申请号：US17674384

申请日：2022-02-17

Applicant: The University of Bristol

Inventor： Gordon Robson MACKENZIE ,  Thomas Bligh SCOTT ,  Neil Anthony FOX ,  Chris HUTSON

IPC: H01L31/08 ,  H01L31/118

CPC classification number: H01L31/085 ,  H01L31/118

Abstract: Provided herein is a diamond gammavoltaic cell comprising: a diamond body having a diamond body surface including first and second opposing surfaces; a low-barrier electrical contact formed on the first surface; and a high-barrier electrical contact formed on the second surface, wherein the diamond body surface that is not in contact with either the low-barrier electrical contact or the high-barrier electrical contact is at least partially surface transfer doped to provide a p-type surface.

公开(公告)号：US11705533B2

公开(公告)日：2023-07-18

申请号：US17257632

申请日：2019-12-27

Applicant: HKC CORPORATION LIMITED

Inventor： En-tsung Cho

IPC: H01L31/118 ,  H01L31/115 ,  G06F1/16

CPC classification number: H01L31/118 ,  G06F1/1684 ,  H01L31/115

Abstract: Disclosed is a photosensitive component, including: an intrinsic layer; a first doped layer provided on a light incident side of the intrinsic layer; and a second doped layer provided on a light exit side of the intrinsic layer; the intrinsic layer, the first doped layer and the second doped layer are all doped with a dopant, and silicon ions are injected into the intrinsic layer, the first doped layer and the second doped layer. An X-ray detector and a display device are further disclosed.

公开(公告)号：US20220397687A1

公开(公告)日：2022-12-15

申请号：US17619597

申请日：2020-06-16

Applicant: DETECTION TECHNOLOGY OYJ

Inventor： Alex WINKLER

IPC: G01T1/20 ,  H01L31/118 ,  H01L27/146

Abstract: An object to provide a radiation detector and method for manufacturing a radiation detector. According to an embodiment, a radiation detector includes: a photodiode layer having at least one pixel; and a scintillator layer including at least one geometrical shape including a scintillating material and a polymer, wherein the scintillating material is configured to convert incident ionising radiation into nonionising electromagnetic radiation, and wherein the at least one geometrical shape is configured to guide at least part of the converted electromagnetic radiation into the at least one pixel. A radiation detector and a method for manufacturing a radiation detector are also disclosed.

公开(公告)号：US20200335653A1

公开(公告)日：2020-10-22

申请号：US16919643

申请日：2020-07-02

Applicant: SHENZHEN XPECTVISION TECHNOLOGY CO., LTD.

Inventor： Peiyan CAO ,  Yurun LIU

IPC: H01L31/118 ,  G01T1/20 ,  G01N23/046 ,  G01V5/00 ,  H01J37/244 ,  A61B6/14 ,  A61B6/00 ,  A61B6/03 ,  H01L31/0352

Abstract: Disclosed herein is a radiation detector comprising: a layer of quantum dots configured to emit a pulse of visible light upon absorbing a radiation particle; an electronic system configured to detect the radiation particle by detecting the pulse of visible light.

公开(公告)号：US10388818B2

公开(公告)日：2019-08-20

申请号：US15625473

申请日：2017-06-16

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan Zhang ,  Yingshuai Du ,  Bo Li ,  Zonggui Wu ,  Jun Li ,  Xuepeng Cao ,  Haifan Hu ,  Jianping Gu ,  Guangming Xu ,  Bicheng Liu

IPC: H01L31/118 ,  G01T1/24 ,  G01T1/02 ,  H01L27/144 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/0304 ,  H01L31/032

Abstract: There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

公开(公告)号：US20190198704A1

公开(公告)日：2019-06-27

申请号：US16331241

申请日：2017-09-12

Applicant: ISTITUTO NAZIONALE DI FISICA NUCLEARE

Inventor： Nicolò CARTIGLIA ,  Gian Franco DALLA BETTA ,  Lucio PANCHERI ,  Maurizio BOSCARDIN ,  Giovanni PATERNOSTER

IPC: H01L31/118 ,  H01L31/028 ,  H01L31/0224

CPC classification number: H01L31/118 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/115

Abstract: Silicon Particle Detector, comprising an absorption region (10) capable of generating electrical charges in response to a particle passing therethrough, a first and a second electrode (20, 30) arranged on opposite sides of the absorption region (10), wherein the first electrode (20) is segmented into a plurality of pads (20a), and a plurality of multiplication layers (40) able to avalanche-multiply the electric charges generated in the absorption region (10), each of the multiplication layers (40) being arranged beneath a respective pad (20a) and interposed between it and the absorption region (10), each multiplication layer (40) is surrounded by a respective protection ring (50) formed by the material of the pad (20a). The protection ring (50) is laterally interposed between the multiplication layer (40) and the absorption region (10).

公开(公告)号：US20180062021A1

公开(公告)日：2018-03-01

申请号：US15625473

申请日：2017-06-16

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan ZHANG ,  Yingshuai DU ,  Bo LI ,  Zonggui WU ,  Jun LI ,  Xuepeng CAO ,  Haifan HU ,  Jianping GU ,  Guangming XU ,  Bicheng LIU

IPC: H01L31/118 ,  G01T1/02 ,  H01L31/0296 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0304 ,  H01L31/0224 ,  H01L27/144

CPC classification number: H01L31/118 ,  G01T1/026 ,  G01T1/241 ,  H01L27/1446 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/0304 ,  H01L31/032

Abstract: There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.

公开(公告)号：US09831375B2

公开(公告)日：2017-11-28

申请号：US13769401

申请日：2013-02-18

Applicant: Westinghouse Electric Company LLC

Inventor： Michael D. Heibel ,  Melissa M. Walter ,  Robert W. Flammang

IPC: H01L31/118 ,  G01T1/24 ,  H01L31/108

CPC classification number: H01L31/118 ,  G01T1/24 ,  H01L31/108

Abstract: A silicon carbide Schottky diode solid state radiation detector that has an electron donor layer such as platinum placed over and spaced above the Schottky contact to contribute high energy Compton and photoelectrical electrons from the platinum layer to the active region of the detector to enhance charged particle collection from incident gamma radiation.

公开(公告)号：US09515211B2

公开(公告)日：2016-12-06

申请号：US14444140

申请日：2014-07-28

Applicant: Krishna C. Mandal ,  J. Russell Terry

Inventor： Krishna C. Mandal ,  J. Russell Terry

IPC: H01L31/0312 ,  H01L31/036 ,  H01L31/118 ,  H01L33/00

CPC classification number: H01L31/036 ,  H01L31/0312 ,  H01L31/118 ,  H01L33/0033

Abstract: A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12°; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1015 cm−3 to about 5×1018 cm−3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H—SiC epitaxial layer doped at a concentration of about 1×1013 cm−3 to about 5×1015 cm−3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Abstract translation: 提供一种检测装置及其制造和使用方法。 检测装置可以包括：SiC衬底，其限定从平面切割到约12°的衬底表面; 衬底表面上的缓冲外延层; 缓冲外延层上的n型外延层; 和n型外延层上的顶部接触。 缓冲外延层可以包括以氮，硼，铝或其混合物掺杂浓度为约1×10 15 cm -3至约5×10 18 cm -3的n型4H-SiC外延层。 n型外延层可以包括用氮气掺杂浓度为约1×1013cm-3至约5×1015cm-3的n型4H-SiC外延层。 顶部接触可以具有约8nm至约15nm的厚度。