公开(公告)号：US20220109241A1

公开(公告)日：2022-04-07

申请号：US17418951

申请日：2019-10-10

Applicant: NUCTECH COMPANY LIMITED

Inventor： Yuanjing LI ,  Haifan HU ,  Ziran ZHAO ,  Xuming MA

IPC: H01Q9/06 ,  H01P1/213 ,  H01P11/00

Abstract: The present disclosure provides a terahertz mixer, a method of manufacturing the terahertz mixer, and an electronic device including the mixer. The terahertz mixer includes: a cavity for forming a radio frequency input waveguide and a local oscillator input waveguide, and for accommodating a microstrip line; the microstrip line formed on at least a part of an inner surface of the cavity by using a semiconductor growth process, wherein the microstrip line extends into a portion of the cavity where the radio frequency input waveguide is located so as to form a microstrip antenna for receiving a radio frequency input signal, and into a portion of the cavity where the local oscillator input waveguide is located so as to form a microstrip antenna for receiving a local oscillator input signal.

公开(公告)号：US20190334045A1

公开(公告)日：2019-10-31

申请号：US16343983

申请日：2017-09-12

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan ZHANG ,  Haifan HU ,  Xuepeng CAO ,  Jun LI

IPC: H01L31/0352 ,  H01L31/02 ,  H01L31/18 ,  H01L27/146

Abstract: According to an embodiment, a method of fabricating a photodiode device may include: growing an epitaxial layer on a first surface of a substrate, wherein the epitaxial layer is first type lightly doped; forming, in the substrate, a first type heavily doped region in contact with the first type lightly doped epitaxial layer; thinning the substrate from a second surface of the substrate opposite to the first surface to expose the first type heavily doped region; patterning the first type heavily doped region from the second surface side of the substrate to form a trench therein, that penetrates through the first type heavily doped region and extends into the epitaxial layer, to serve as a first electrode region of the photodiode device; and forming a second type heavily doped region at bottom of the trench, to serve as a second electrode region of the photodiode device.

公开(公告)号：US20190326458A1

公开(公告)日：2019-10-24

申请号：US16467623

申请日：2017-08-08

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan ZHANG ,  Haifan HU ,  Xuepeng CAO ,  Jun LI

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/0224 ,  H01L31/103 ,  H01L27/146

Abstract: A photodiode device and a photodiode detector are provided. According to an embodiment, the photodiode device may include a first type lightly doped semiconductor base including a first surface and a second surfaces opposite to each other, a first electrode region being first type heavily doped and disposed on the first surface of the semiconductor base, a second electrode region being second type heavily doped and disposed on the second surface of the semiconductor base, wherein the first surface is a light incident surface.

公开(公告)号：US20180342542A1

公开(公告)日：2018-11-29

申请号：US15580848

申请日：2016-08-31

Applicant: Nuctech Company Limited

Inventor： Lan ZHANG ,  Yuanjing LI ,  Yinong LIU ,  Haifan HU ,  Jun LI

IPC: H01L27/144 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0352

CPC classification number: H01L27/1446 ,  H01L27/1443 ,  H01L27/146 ,  H01L27/1463 ,  H01L31/0224 ,  H01L31/035281 ,  H01L31/1804

Abstract: A coplanar electrode photodiode array and a manufacturing method thereof are disclosed. On a top side of a low resistance rate substrate, a high resistance epitaxial silicon wafer, a first conductive type heavily doped region and a second conductive type doped region are formed, which are a cathode and an anode of a photodiode respectively. The structure includes a trench structure formed between the anode and the cathode, the trench structure may be form by a gap, an insulating material, a conductive structure, a reflective material, and ion implantation, and also includes a first conductive type heavily doped region, an insulating isolation layer or a conductive structure with an insulating layer, and the like formed under the anode and the cathode.

公开(公告)号：US20180062021A1

公开(公告)日：2018-03-01

申请号：US15625473

申请日：2017-06-16

Applicant: NUCTECH COMPANY LIMITED

Inventor： Lan ZHANG ,  Yingshuai DU ,  Bo LI ,  Zonggui WU ,  Jun LI ,  Xuepeng CAO ,  Haifan HU ,  Jianping GU ,  Guangming XU ,  Bicheng LIU

IPC: H01L31/118 ,  G01T1/02 ,  H01L31/0296 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0304 ,  H01L31/0224 ,  H01L27/144

CPC classification number: H01L31/118 ,  G01T1/026 ,  G01T1/241 ,  H01L27/1446 ,  H01L31/022408 ,  H01L31/022416 ,  H01L31/028 ,  H01L31/0296 ,  H01L31/02966 ,  H01L31/0304 ,  H01L31/032

Abstract: There is provided a semiconductor detector. According to an embodiment, the semiconductor detector may include a semiconductor detection material including a first side and a second side opposite to each other. One of the first side and the second side is a ray incident side that receives incident rays. The detector may further include a plurality of pixel cathodes disposed on the first side and a plurality of pixel anodes disposed on the second side. The pixel anodes and the pixel cathodes correspond to each other one by one. The detector may further include a barrier electrode disposed on a periphery of respective one of the pixel cathodes or pixel anodes on the ray incident side. According to the embodiment of the present disclosure, it is possible to effectively suppress charge sharing between the pixels and thus to improve an imaging resolution of the detector.