MEMORY SYSTEM
    1.
    发明申请
    MEMORY SYSTEM 审中-公开

    公开(公告)号:US20200335157A1

    公开(公告)日:2020-10-22

    申请号:US16681035

    申请日:2019-11-12

    Applicant: SK hynix Inc.

    Inventor: Min-Su PARK

    Abstract: A memory system includes a control device suitable for generating first command signals for a unit time and storing first count information corresponding to the number of times to generate the first command signals based on temperature information, in a training mode, and generating second command signals based on the first count information and second count information in a normal mode, the second count information corresponding to the number of times to generate the second command signals for the unit time, and a memory device suitable for performing an internal operation based on the first command signals and providing the control device with the temperature information when performing the internal operation, in the training mode, and performing an internal operation based on the second command signals in the normal mode.

    MEMORY DEVICE
    2.
    发明申请
    MEMORY DEVICE 审中-公开

    公开(公告)号:US20200335154A1

    公开(公告)日:2020-10-22

    申请号:US16692687

    申请日:2019-11-22

    Applicant: SK hynix Inc.

    Abstract: A memory device includes a memory region, and a setting circuit suitable for changing setting information based on a temperature information signal so that the memory region operates according to a first condition at pseudo cryogenic temperature, and operates according to a second condition at room temperature.

    Superconducting learning matrix
    4.
    发明授权
    Superconducting learning matrix 失效
    超级学习矩阵

    公开(公告)号:US3744038A

    公开(公告)日:1973-07-03

    申请号:US3744038D

    申请日:1971-07-09

    Applicant: ROBOTRON VEB K

    Inventor: KNEUPEL H STEFFIN B

    CPC classification number: G06K9/66 G06N3/063 G11C11/44 G11C15/06 Y10S505/84

    Abstract: A superconducting learning matrix in which the coupling cells at the matrix intersections include a write cryotron controlled by the row lines for activating the storage cells, and a coupling cryotron for coupling the column lines either to the row lines or word recognition lines for reading out of the cell. The storage cells are activated according to a geometric series. The coupling cryotrons may also be controlled by a blocking line, and additional switching cryotrons may be provided for insuring constant current in taught cells. In a further embodiment, a complementary matrix may also be provided.

    Abstract translation: 一种超导学习矩阵,其中矩阵交点处的耦合单元包括由用于激活存储单元的行线控制的写入深冷子,以及用于将列线耦合到行线或字识别线用于读出的耦合低温电极 细胞。 存储单元根据几何系列被激活。 耦合低温电极也可以通过阻塞线来控制,并且可以提供额外的开关式低温电极用于确保所教导的电池中的恒定电流。 在另一实施例中,还可以提供互补矩阵。

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