公开(公告)号：US20040041617A1

公开(公告)日：2004-03-04

申请号：US10233232

申请日：2002-08-30

发明人： Gregory S. Snider ,  Philip J. Kuekes ,  R. Stanley Williams

IPC分类号： H03K017/00 ,  H01L021/8244 ,  G11C013/00 ,  H01L025/00 ,  H03K019/177 ,  H01L031/109 ,  H01L031/072 ,  H01L031/0336 ,  H01L031/0328 ,  H01L029/06 ,  H01L021/8234 ,  G11C011/00 ,  H03K019/00 ,  H04Q001/00

CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/0014 ,  G11C2213/14 ,  G11C2213/34 ,  G11C2213/77 ,  G11C2213/81

摘要： A computing system for implementing at least one electronic circuit with gain comprises at least one two-dimensional molecular switch array. The molecular switch array is formed by assembling two or more crossed planes of wires into a configuration of devices. Each device comprises a junction formed by a pair of crossed wires and at least one connector species that connects the pair of crossed wires in the junction. The junction has a functional dimension in nanometers, and includes a switching capability provided by both (1) one or more connector species and the pair of crossed wires and (2) a configurable nano-scale wire transistor having a first state that functions as a transistor and a second state that functions as a conducting semiconductor wire. Specific connections are made to interconnect the devices and connect the devices to two structures that provide high and low voltages.

摘要翻译： 用于实现具有增益的至少一个电子电路的计算系统包括至少一个二维分子开关阵列。 分子开关阵列通过将两个或更多个交叉的导线平面组装成器件的配置而形成。 每个装置包括由一对交叉线形成的连接点和连接该连接处的一对交叉线的至少一个连接器种类。 该结具有纳米的功能尺寸，并且包括由（1）一个或多个连接器种类和一对交叉导线提供的切换能力，以及（2）具有第一状态的可配置纳米级线晶体管，其具有作为 晶体管和作为导电半导体线的第二状态。 进行具体的连接来连接设备并将设备连接到提供高和低电压的两个结构。

公开(公告)号：US20030067796A1

公开(公告)日：2003-04-10

申请号：US10242034

申请日：2002-09-12

申请人： AGFA-GEVAERT

发明人： Rudi Vanhooydonck

IPC分类号： G11C013/00 ,  G11B003/70 ,  G11B005/84 ,  G11B007/26

CPC分类号： B41J2/471 ,  B41J2/4753

摘要： An apparatus for thermal recording an image in a substantially light-insensitive thermographic material m having a burning temperature Tb, the substantially light-insensitive thermographic material m comprising a thermosensitive element having a conversion temperature Tc, a support, and at least one light-to-heat conversion agent, comprises a means for generating a radiation beam 20 including wavelengths null absorbed by the light-to-heat conversion agent and an optical means of scanning a line 40 of the substantially light-insensitive thermographic material m with the radiation beam 20 at different positions thereon along a scanning direction at each point of time in a scanning cycle; and a method for recording information, comprising the steps of: providing an apparatus for thermal recording 1, the above-mentioned substantially light-insensitive thermographic material m (5); generating a radiation beam 20 including wavelengths null absorbed by the light-to-heat conversion agent and being modulated in accordance with the information to be recorded; scanning a line 40 of the substantially light-insensitive thermographic material m a first time with the radiation beam, thereby heating the line of the substantially light-insensitive thermographic material m to a first predetermined temperature T1 being above the conversion temperature Tc and below the burning temperature Tb of the substantially light-insensitive thermographic material m; re-scanning the same line of the substantially light-insensitive thermographic material m a plurality of times ns with the radiation beam being identically modulated in accordance with the information to be recorded.

摘要翻译： 一种用于在具有燃烧温度Tb的基本上不透光的温度记录材料m中热图像记录的装置，该基本上不透光的热敏照相材料m包括具有转换温度Tc的热敏元件，载体和至少一个光 - - 热转换剂，包括用于产生包括由光 - 热转换剂吸收的波长λ的辐射束20的装置和用辐射束20扫描基本上不透光的热敏照相材料m的线40的光学装置 在扫描周期中的每个时间点沿着扫描方向的不同位置; 以及一种用于记录信息的方法，包括以下步骤：提供热敏记录装置1，上述基本上不光敏的热敏照相材料m（5）; 产生包括由光热转换剂吸收的波长λ并根据待记录的信息进行调制的辐射束20; 用辐射束第一次扫描基本上不透光的热成像材料的线40，从而将基本上不光敏的热敏照相材料m的线加热至高于转换温度Tc并低于燃烧温度的第一预定温度T1 Tb基本上不透光的热成像材料m; 根据要记录的信息，辐射束被相同地调制，以多次扫描基本上不透光的热敏照相材料的同一行。

公开(公告)号：US20010017786A1

公开(公告)日：2001-08-30

申请号：US09792939

申请日：2001-02-26

申请人： Lucent Technologies Inc.

发明人： Ted Kirk Woodward

IPC分类号： G11C013/00

CPC分类号： H01L31/107

摘要： An integrated optoelectronic circuit chip for optical data communication systems includes a silicon substrate, at least one MOS field effect transistor (MOSFET) formed on a portion of the silicon substrate, and an avalanche photodetector operatively responsive to an incident optical signal and formed on another portion of the substrate. The avalanche photodetector includes a light absorbing region extending from a top surface of the silicon substrate to a depth h and doped to a first conductivity type. The light absorbing region is ionizable by the incident optical signal to form freed charge carriers in the light absorbing region. A light responsive region is formed in the light absorbing region and extends from the top surface of the silicon substrate to a depth of less than h. The light responsive region is doped to a second conductivity type of opposite polarity to the first conductivity type. The light absorbing region and the light responsive region form a P-N junction at the interface therebetween such that when the light absorbing and light responsive regions are appropriately reverse biased, the freed charge carriers in the light absorbing region are amplified by avalanche multiplication.

摘要翻译： 用于光学数据通信系统的集成光电子电路芯片包括硅衬底，形成在硅衬底的一部分上的至少一个MOS场效应晶体管（MOSFET）和可操作地响应于入射光信号并形成在另一部分上的雪崩光电探测器 的基底。 雪崩光电检测器包括从硅衬底的顶表面延伸到深度h并掺杂到第一导电类型的光吸收区域。 光吸收区域可通过入射光信号进行电离，以在光吸收区域中形成释放的电荷载流子。 在光吸收区域形成光响应区域，并且从硅衬底的顶表面延伸到小于h的深度。 光响应区被掺杂到与第一导电类型相反极性的第二导电类型。 光吸收区域和光响应区域在它们之间的界面处形成P-N结，使得当光吸收和光响应区域被适当地反向偏置时，光吸收区域中释放的电荷载流子被雪崩倍增放大。

公开(公告)号：US20040264229A1

公开(公告)日：2004-12-30

申请号：US10899999

申请日：2004-07-27

发明人： David Tsu

IPC分类号： G11C013/00

CPC分类号： G02F1/31 ,  G02F1/0126 ,  G02F1/0147 ,  G02F1/11 ,  G02F1/292 ,  G02F2202/09 ,  G02F2203/18 ,  G02F2203/24

摘要： An element for steering electromagnetic beams. The element includes a phase change material in combination with dielectric and other layers in a multilayer optical stack. The phase change material that is reversibly transformable between two or more structural states, where different structural states differ with respect to refractive index and/or extinction coefficient. The structural state of the phase change material establishes a phase angle state for the element that dictates the direction of propagation of an output beam produced from an incident electromagnetic beam. Depending on the structural state, the element adopts one of two principal phase angle states and a binary beam steering capability is achieved in which an incident electromagnetic beam can be redirected in either of two directions. In a preferred embodiment, the output beam is a reflected beam and the element includes a phase change material sandwiched between two dielectric materials and supported by a metal layer.

摘要翻译： 用于转向电磁波的元件。 该元件包括与多层光学堆叠中的电介质层和其它层组合的相变材料。 相变材料可在两种或多种结构状态之间可逆地转化，其中不同的结构状态相对于折射率和/或消光系数而不同。 相变材料的结构状态为指定从入射电磁波束产生的输出光束的传播方向的元件建立相位角状态。 根据结构状态，元件采用两个主相位状态中的一个，并且实现二进制光束转向能力，其中入射电磁束可以在两个方向中的任一方向上重定向。 在优选实施例中，输出光束是反射光束，并且元件包括夹在两个电介质材料之间并由金属层支撑的相变材料。

公开(公告)号：US20040240252A1

公开(公告)日：2004-12-02

申请号：US10453199

申请日：2003-06-02

发明人： Joseph F. Pinkerton ,  Jeffrey D. Mullen

IPC分类号： G11C013/00

CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C11/56 ,  G11C13/025 ,  G11C2213/16 ,  H01H1/0094 ,  Y10S977/70 ,  Y10S977/732 ,  Y10S977/943

摘要： Nanoelectromechanical (NEM) memory cells are provided by anchoring a conductive nanometer-scale beam (e.g., a nanotube) to a base and allowing a portion of the beam to move. A charge containment layer is provided in the vicinity of this free-moving portion. To read if a charge is stored in the charge containment layer, a charge is formed on the beam. If a charge is stored then forces between the charged beam and the charge containment layer will displace the free-moving portion of the beam. This movement may be sensed by a sense contact. Alternatively, the beam may contact a sense contact at an ambient frequency when no charge is stored. Changing the amount of charge stored may change this contact rate. The contract rate may be sensed to determine the amount of stored charge.

摘要翻译： 通过将导电纳米级光束（例如，纳米管）锚定到基底并允许光束的一部分移动来提供纳米机电（NEM）存储器单元。 在该自由移动部分的附近设置有电荷容纳层。 为了读取电荷是否存储在电荷容纳层中，在光束上形成电荷。 如果存储电荷，则充电光束和电荷容纳层之间的力将使光束的自由移动部分移位。 该运动可以通过感测接触来感测。 或者，当不存储电荷时，光束可以以环境频率接触感测触点。 改变存储的电量可能会改变这个接触率。 可以检测合同率以确定存储的电荷量。

公开(公告)号：US20040120180A1

公开(公告)日：2004-06-24

申请号：US10324868

申请日：2002-12-19

发明人： Eric Rotenberg ,  Jonathan S. Lindsey

IPC分类号： G11C013/00

CPC分类号： G11C13/0014 ,  B82Y10/00 ,  G11C2213/79

摘要： A molecular memory cell includes first and second electrodes. First and second charge storage molecules have respective first and second oxidation potentials and are disposed between the first and second electrodes. A molecular linkage couples the first and second charge storage molecules to the first electrode and provides respective first and second electron transfer rates for the first and second charge storage molecules. The first and second different oxidation potentials are different and/or the first and second electron transfer rates are different. In particular, the second oxidation potential may be greater than the first oxidation potential and the first electron transfer rate may be greater than the second electron transfer rate, such that the first charge storage molecule may be used as fast, volatile primary memory and the second charge storage molecule can be used as slower, less volatile secondary memory. In various embodiments, memory cells can be constructed from an admixture of charge storage molecules or by using a bipartite charge storage molecule. Memory cells can include a molecular transistor incorporating such molecular structures.

摘要翻译： 分子存储单元包括第一和第二电极。 第一和第二电荷存储分子具有相应的第一和第二氧化电位并且设置在第一和第二电极之间。 分子连接将第一和第二电荷存储分子耦合到第一电极，并且为第一和第二电荷存储分子提供相应的第一和第二电子转移速率。 第一和第二不同的氧化电位是不同的，和/或第一和第二电子传递速率是不同的。 特别地，第二氧化电位可以大于第一氧化电位，并且第一电子传输速率可以大于第二电子传输速率，使得第一电荷存储分子可以用作快速，易挥发的主存储器， 电荷存储分子可用作较慢，较不易挥发的二次记忆。 在各种实施例中，存储器单元可以由电荷存储分子的混合物或通过使用二分电荷存储分子构成。 存储单元可以包括掺入这种分子结构的分子晶体管。

公开(公告)号：US20030031041A1

公开(公告)日：2003-02-13

申请号：US09925245

申请日：2001-08-08

发明人： Eric C. Hannah ,  Michael A. Brown

IPC分类号： G11C013/00

CPC分类号： B82Y10/00 ,  G11C11/14 ,  G11C13/00

摘要： A system for writing data to and reading data from a magnetic medium utilizing a spin polarized electron beam.

摘要翻译： 一种利用自旋极化电子束将数据写入和从磁介质读取数据的系统。

公开(公告)号：US20020163829A1

公开(公告)日：2002-11-07

申请号：US10139746

申请日：2002-05-07

申请人： Coatue Corporation

发明人： Vladimir Bulovic ,  Aaron Mandell ,  Andrew Perlman

IPC分类号： G11C013/00

CPC分类号： H01L51/0541 ,  B82Y10/00 ,  G11C13/0009 ,  G11C13/0014 ,  G11C2213/13 ,  H01L29/685 ,  H01L51/0512 ,  H01L51/0558 ,  H01L51/0591 ,  H01L51/0595

摘要： A novel switching device is provided with an active region arranged between first and second electrodes and including a molecular system and ionic complexes distributed in the system. A control electrode is provided for controlling an electric field applied to the active region, which switches between a high-impedance state and a low-impedance state when the electrical field having a predetermined polarity and intensity is applied for a predetermined time.

摘要翻译： 一种新颖的开关装置设置有布置在第一和第二电极之间的有源区，并且包括分布在系统中的分子系统和离子络合物。 提供控制电极，用于控制施加到有源区域的电场，当具有预定极性和强度的电场施加预定时间时，该有源区域在高阻抗状态和低阻抗状态之间切换。

公开(公告)号：US20010017787A1

公开(公告)日：2001-08-30

申请号：US09793602

申请日：2001-02-27

申请人： FUJITSU LIMITED

发明人： Hitoshi Ikeda

IPC分类号： G11C013/00

CPC分类号： G11C7/22 ,  G11C11/409

摘要： A semiconductor memory device of a dynamic type having an interface of a static-type semiconductor memory device includes a memory cell array, and a control circuit controlling a read operation to be initiated in response to a predetermined signal externally applied thereto before a read or write command is externally applied to the control circuit.

摘要翻译： 具有静态型半导体存储器件的界面的动态类型的半导体存储器件包括存储单元阵列和控制电路，控制电路响应于在读或写之前外部施加的预定信号来控制要启动的读操作 命令被外部施加到控制电路。

公开(公告)号：US20010014032A1

公开(公告)日：2001-08-16

申请号：US09778785

申请日：2001-02-08

发明人： Tetsuhito Nakamura ,  Naonobu Sukegawa ,  Tsuguo Matsuura ,  Masanao Ito

IPC分类号： G11C013/00

CPC分类号： G06F13/1631 ,  G06F12/0215

摘要： A memory system having a DRAM or synchronous DRAM as a memory unit. A memory controller which controls the memory unit in correspondence with a memory access request received from a memory access request generator, has a row address buffer for storing a row address extracted from an issued memory access request, avoiding registration of same row address into different positions, a pointer register for storing a pointer to a registration entry in the row address buffer holding the row address, correspondence detection circuit that detects whether or not row addresses of issued access requests correspond with each other by comparing stored pointers, and a memory unit control circuit which continuously issues column addresses of plural requests with row addresses corresponding with each other to the DRAM.

摘要翻译： 具有DRAM或同步DRAM作为存储单元的存储器系统。 存储器控制器，其与从存储器访问请求生成器接收的存储器访问请求相对应地控制存储器单元，具有用于存储从发布的存储器访问请求中提取的行地址的行地址缓冲器，避免将相同行地址注册到不同的位置 用于存储指向存储行地址的行地址缓冲器中的注册条目的指针寄存器，对应检测电路，通过比较存储的指针来检测发出的访问请求的行地址是否相互对应;存储器单元控制 电路，其连续地向DRAM发送具有彼此对应的行地址的多个请求的列地址。