公开(公告)号：US20040060502A1

公开(公告)日：2004-04-01

申请号：US10255493

申请日：2002-09-26

申请人： University of Florida

发明人： Rajiv K. Singh

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06 ,  H01L021/4763

CPC分类号： H01L21/31053 ,  C09G1/02 ,  C09K3/1463 ,  C30B7/00 ,  C30B7/005 ,  H01L21/3212

摘要： A slurry includes a plurality of particles and at least one selective adsorption additive. The particles are preferably composite particles including a core surrounded by a shell provided by the selective adsorption additive. The slurry can be used to polish a structure including silicon dioxide or a low K dielectric film and a silicon nitride containing film, such as to form a shallow trench isolation (STI) structure or a metal-dielectric structure. The silicon nitride containing film surface substantially adsorbs the selective adsorption additive, whereas the silicon dioxide or low K dielectric film shows non-substantial adsorption characteristics to the adsorption additive. In another embodiment of the invention, silicon dioxide or low K dielectric film shows non-substantial adsorption of the selective adsorption additive at a pressure above a predetermined first pressure, and substantial adsorption of the selective adsorption additive for pressures below a predetermined second pressure, where the first pressure is greater than the second pressure.

摘要翻译： 浆料包括多个颗粒和至少一种选择性吸附添加剂。 颗粒优选是包括由选择性吸附添加剂提供的壳包围的核的复合颗粒。 浆料可用于抛光包括二氧化硅或低K电介质膜和含氮化硅膜的结构，例如形成浅沟槽隔离（STI）结构或金属 - 电介质结构。 含氮化硅膜表面基本上吸附选择性吸附添加剂，而二氧化硅或低K电介质膜对吸附添加剂显示出非实质的吸附特性。 在本发明的另一个实施方案中，二氧化硅或低K电介质膜在高于预定的第一压力的压力下显示非选择性吸附选择性吸附添加剂，并且在低于预定的第二压力的情况下显着吸附选择性吸附添加剂， 第一压力大于第二压力。

公开(公告)号：US20030172867A1

公开(公告)日：2003-09-18

申请号：US10336664

申请日：2003-01-03

申请人： NUCCON TECHNOLOGIES INC.

发明人： Reuel Shinnar ,  Alexander Couzis ,  Charles Maldarelli

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： B82Y30/00 ,  C01G11/02 ,  C01P2004/64 ,  C30B7/00 ,  C30B29/10 ,  C30B29/54 ,  C30B29/605

摘要： A process for generating single crystalline nano-crystals is described. The nano-crystals are formed on a substrate containing nano-sectors having functional groups which promote nucleation of crystals and inert sectors which do not. The particle size of the crystals is controlled by the size of the nano-sectors and the crystals become reversibly attached to the surface of the nano-sectors during crystallization. In addition, the substrate containing the single crystalline nano-crystals and the single crystalline nano-crystals formed by the process are also claimed.

摘要翻译： 描述了用于产生单晶纳米晶体的方法。 纳米晶体形成在含有具有促进结晶成核的官能团的纳米级部分和不具有惰性部分的纳米级部分的基板上。 晶体的粒度由纳米部分的尺寸控制，晶体在结晶过程中可逆地附着到纳米部分的表面。 此外，还要求保护含有单晶纳米晶体的基板和通过该方法形成的单晶纳米晶体。

公开(公告)号：US20030106487A1

公开(公告)日：2003-06-12

申请号：US10006382

申请日：2001-12-10

发明人： Wen-Chiang Huang

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B5/00 ,  C30B7/00 ,  C30B7/005 ,  C30B29/60

摘要： A photonic crystal material and a method for producing such a material according to a predetermined, two-dimensional or three-dimensional porous template. The method include the steps of: (A) preparing a porous template, wherein the preparation step includes the sub-steps of (i) dissolving a first material in a volatile solvent to form an evaporative solution, (ii) depositing a thin film of the solution onto a substrate, and (iii) exposing the solution film to a moisture environment while allowing the solvent in the solution to evaporate for forming the template that is constituted of an ordered array of micrometer- or nanometer-scaled air bubbles, which are surrounded with walls and are dispersed in a film of the first material; (B) filling the air bubbles with a second material; (C) at least partially removing the walls to create a plurality of voids; (D) refilling the voids with a third material; and (E) removing the second material from the air bubbles to obtain the photonic crystal material in the form of an array of air bubbles with walls made of the third material.

摘要翻译： 光子晶体材料和根据预定的二维或三维多孔模板生产这种材料的方法。 该方法包括以下步骤：（A）制备多孔模板，其中制备步骤包括以下步骤：（i）将第一材料溶解在挥发性溶剂中以形成蒸发溶液，（ii）沉积薄膜 将溶液涂布到基底上，和（iii）将溶液膜暴露于湿气环境中，同时使溶液中的溶剂蒸发以形成由微米级或纳米级气泡的有序阵列构成的模板，其为 被墙壁包围并分散在第一种材料的薄膜中; （B）用第二种材料填充气泡; （C）至少部分地去除所述壁以产生多个空隙; （D）用第三种材料填充空隙; 和（E）从气泡中除去第二材料，以获得具有由第三材料制成的壁的气泡阵列形式的光子晶体材料。

公开(公告)号：US20030101925A1

公开(公告)日：2003-06-05

申请号：US10257939

申请日：2002-10-22

发明人： Michiro Ohnota ,  Kazuo Orita

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C07D277/34 ,  C30B7/00

摘要： A homogeneous crystal having excellent stability which is suitable for the industrial-scale production of 5-null(2,4-dioxothiazolidin-5-yl)methylnull-2-methoxy-N-nullnull4-(trifluoromethyl)phenylnullmethylnullbenzamide (KRP-297). The novel crystal of KRP-297 is produced through recrystallization from an alcohol solvent. It is characterized by having diffraction angles (2null) at at least 9.7null, 15.0null, and 22.5null in X-ray powder diffractometry.

摘要翻译： 具有优异稳定性的均匀晶体，适用于工业规模生产5 - [（2,4-二氧代噻唑烷-5-基）甲基] -2-甲氧基-N - [[4-（三氟甲基）苯基]甲基] 苯甲酰胺（KRP-297）。 KRP-297的新晶体是通过从醇溶剂中重结晶制得的。 其特征在于在X射线粉末衍射中具有至少9.7°，15.0°和22.5°的衍射角（2θ）。

公开(公告)号：US20030005877A1

公开(公告)日：2003-01-09

申请号：US10060872

申请日：2002-01-29

发明人： Peter R. David

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B7/00 ,  B01J2219/00274 ,  B33Y80/00 ,  C30B29/58 ,  G01N25/147 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A microfluidic method is provided that comprises: delivering a first fluid to a first lumen of a microfluidic device and a second, different fluid to a second lumen of the microfluidic device, the first and second lumens sharing a common wall which allows for diffusion between the lumens over at least a portion of the length of the lumens; and having the first and second fluids diffuse between the first and second lumens.

摘要翻译： 提供了一种微流体方法，其包括：将第一流体输送到微流体装置的第一腔，将第二流体递送至微流体装置的第二腔，所述第一和第二流体共享公共壁，其允许在所述微流体装置之间扩散 在流明的长度的至少一部分上的流明; 并且使第一和第二流体在第一和第二腔之间扩散。

公开(公告)号：US20020195050A1

公开(公告)日：2002-12-26

申请号：US10060955

申请日：2002-01-29

发明人： Peter R. David

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B7/00 ,  B01J2219/00274 ,  B33Y80/00 ,  C30B29/58 ,  G01N25/147 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024

摘要： A microfluidic method is provided that comprises: delivering first and second fluids to a lumen of a microfluidic device such that the first and second fluids flow adjacent to each other within the lumen without mixing except for diffusion at an interface between the first and second fluids, wherein the first fluid is different than the second fluid.

摘要翻译： 提供了一种微流体方法，其包括：将第一和第二流体输送到微流体装置的内腔，使得第一和第二流体在腔内彼此相邻流动而不混合，除了在第一和第二流体之间的界面处的扩散， 其中所述第一流体不同于所述第二流体。

公开(公告)号：US20020062783A1

公开(公告)日：2002-05-30

申请号：US09853467

申请日：2001-05-11

发明人： Terry Lee Bray

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B7/00 ,  C30B29/58

摘要： The present invention provides novel devices and method for kinetically controlling vapor diffusion in crystal growth. The devices comprise discrete diffusion pathways which control the kinetics of vapor diffusion between the crystal growth solution and the reservoir. The devices can comprise a channel which can be of varying lengths or geometries. The channel can either be static or controlled actively or dynamically. Alternatively, the diffusion pathways are provided by the material of the device itself. The device comprises porous and/or water absorbing materials through which the vapor can diffuse. The vapor diffusion rate can be controlled by the thickness or material of the device, or a combination of both.

摘要翻译： 本发明提供了用于动态地控制晶体生长中的蒸气扩散的新型装置和方法。 这些装置包括分散的扩散途径，其控制晶体生长溶液和储层之间的蒸气扩散的动力学。 该装置可以包括可以具有不同长度或几何形状的通道。 频道可以是静态的或主动的或动态的。 或者，扩散路径由装置本身的材料提供。 该装置包括多孔和/或吸水材料，蒸气可以通过该材料扩散。 蒸汽扩散速率可以通过装置的厚度或材料或两者的组合来控制。

公开(公告)号：US20040194690A1

公开(公告)日：2004-10-07

申请号：US10655581

申请日：2003-09-05

发明人： Daniel James Twitchen ,  Philip Maurice Martineau ,  Geoffrey Alan Scarsbrook ,  Baerbel Susanne Charlotte Dorn ,  Michael Andrew Cooper

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B25/105 ,  C01B32/28 ,  C30B29/04 ,  Y10T428/30

摘要： A diamond layer of single crystal CVD diamond which is coloured, preferably which has a fancy colour, and which has a thickness of greater than 1 mm.

摘要翻译： 金刚石层的单晶CVD金刚石，其着色，优选具有花式的颜色，并且具有大于1mm的厚度。

公开(公告)号：US20040177803A1

公开(公告)日：2004-09-16

申请号：US10665550

申请日：2003-09-22

发明人： Geoffrey Alan Scarsbrook ,  Philip Maurice Martineau ,  Daniel James Twitchen

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06 ,  C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B29/04 ,  C30B25/02 ,  C30B25/20 ,  C30B33/00

摘要： A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

摘要翻译： 从通过化学气相沉积（CVD）基本上没有表面缺陷的基板上生长的CVD金刚石生产大面积单晶金刚石的方法。 同质外延CVD生长的金刚石和基底横切于衬底的表面，在其上发生金刚石生长以产生大面积单晶CVD金刚石板。

公开(公告)号：US20030183155A1

公开(公告)日：2003-10-02

申请号：US10063164

申请日：2002-03-27

申请人： General Electric Company

发明人： Mark Philip D'Evelyn ,  Steven William Webb ,  Suresh Shankarappa Vagarali ,  Yavuz Kadioglu ,  Dong-Sil Park ,  Zheng Chen

IPC分类号： C30B007/00 ,  C30B021/02 ,  C30B028/06

CPC分类号： C30B29/403 ,  B82Y10/00 ,  B82Y30/00 ,  C30B7/00 ,  C30B9/00 ,  C30B29/406 ,  Y10T117/1052 ,  Y10T117/1096

摘要： A method of forming at least one single crystal of a Group III metal nitride. The method includes the steps of: providing a flux material and a source material comprising at least one Group III metal selected from the group consisting of aluminum, indium, and gallium, to a reaction vessel; sealing the reaction vessel; heating the reaction vessel to a predetermined temperature and applying a predetermined pressure to the vessel. The pressure is sufficient to suppress decomposition of the Group III metal nitride at the temperature. Group III metal nitrides, as well as electronic devices having a Group III metal nitride substrate formed by the method are also disclosed.

摘要翻译： 一种形成III族金属氮化物的至少一种单晶的方法。 该方法包括以下步骤：向反应容器提供包含至少一种选自铝，铟和镓的III族金属的焊剂材料和源材料; 密封反应容器; 将反应容器加热至预定温度并向容器施加预定压力。 该压力足以在该温度下抑制第III族金属氮化物的分解。 还公开了III族金属氮化物，以及通过该方法形成的具有III族金属氮化物衬底的电子器件。