Abstract:
In a photoelectric conversion device, groups of unit pixels are arranged in a well, where each of the unit pixels includes photoelectric conversion elements, an amplifier transistor, and transfer transistors. The photoelectric conversion device includes a line used to supply a voltage to the well, a well-contact part used to connect the well-voltage-supply line to the well, and transfer-control lines used to control the transfer transistors. The transfer-control lines are symmetrically arranged with respect to the well-voltage-supply line in respective regions of the unit-pixel groups.
Abstract:
An information communication method includes: setting an exposure time of an image sensor so that, in an image obtained by capturing a subject by the image sensor, a bright line corresponding to an exposure line included in the image sensor appears according to a change in luminance of the subject; capturing the subject that changes in luminance by the image sensor with the set exposure time, to obtain the image including the bright line; and obtaining information by demodulating data specified by a pattern of the bright line included in the obtained image.
Abstract:
An information communication method includes: setting an exposure time of an image sensor to less than or equal to 1/2000 second so that, in an image obtained by capturing a subject by the image sensor, a stripe bright line parallel to a plurality of exposure lines included in the image sensor appears according to a change in luminance of the subject; obtaining the image including the stripe bright line parallel to the plurality of exposure lines by, using the set exposure time, starting exposure sequentially for the plurality of exposure lines each at a different time; and obtaining information by demodulating data according to, in a pattern of the bright line included in the obtained image, a brightness change in a direction perpendicular to the plurality of exposure lines.
Abstract:
A wavelength-portion controllable optoelectronic switch ("Opsistor") capable of rapid switch frequencies fabricated as a monolithic integrated circuit is disclosed. The Opsistor is comprised of two inverse parallel photodiodes in close proximity, preferably on a monolithic silicon substrate, such that the anode of one photodiode is electrically connected via a first conductor to the cathode of the second photodiode, and the cathode of the first photodiode is electrically connected via a second conductor to the anode of the second photodiode. The voltage-phase of the Opsistor is determined by the relative illumination to the Opsistor's two photodiodes and is rapidly switchable. As a receiving device for data signals, the Opsistor receives programming signals from a transmitter light source. By using different wavelength-portion bandwidth pass filters on each of the two Opsistor photodiodes, a OPS-F device is created, and by using a two-wavelength transmitter light source designated as TM2, a TM2/OPS-F system is created capable of high data transmission rates, and high resistance to signal noise. Applications suitable for the Opsistor and TM2/OPS-F system include high speed optocouplers, linear optical position sensors, edge and target detection sensors, image recognition sensors, the basic subunits of optically based state computers, and high resolution optical encoders.
Abstract:
Methods and apparatus for propagating robust scanning signals in pixel addressing operations in a pixel-to-pixel sequence that produces a predetermined pattern of alternating colors in an image signal so that a single channel, sequential color signal is generated from the pixel addressing operations in optoelectronic image transducers to reduce complexity and improve image fidelity.
Abstract:
A reading apparatus having a photo-detecting element array constituted by a plurality of photo-detecting element blocks each constituted by a plurality of photo-detecting elements, and having switching elements for transferring charges generated in the photo-detecting elements block by block to an output circuit, in which the output circuit has wirings having no crossing portions and the outputs of the photo-detecting elements can be produced as time-series signals without requiring any external memory. In the reading apparatus, the switching elements are selected block by block of the photo-detecting element array, the blocks are commonly connected so that the respective orders of adjacent two of the blocks in the output circuit are opposite to each other, and an output of the output circuit is selected by two selection circuits synchronized with the selection of the switching elements, the two selection circuits respectively having selection orders which are opposite to each other, whereby the selection circuits are switched block by block of the photo-detecting element array to thereby obtain a time-series output.
Abstract:
An image sensor device having a plurality of sensor elements connected in a matrix is driven by sequentially applying successive driving pulses, wherein a leading edge of a driving pulse coincides with a trailing edge of a preceding driving pulse and the slew rate at the leading edge is equal to the slew rate at the trailing edge.
Abstract:
An image sensing system utilizes a random access memory to provide image sensing and apply random access memory capabilities--data storage, refresh, nondestructive readout, etc.--to binary data representing the two-dimensional image. The random access memory can be used to effect a digital representation of the image or to provide electronic data, e.g., for optical character recognition.
Abstract:
An erasable optical memory array having at each storage location a non-crystalline, semiconductor threshold switching device. The threshold voltage of each switching device is strongly temperature dependent and each switching device has a finite recovery time when switched to its low resistance state. Means are provided for periodically sampling each of the switching devices with voltage pulses repetitive at a first frequency and having a first voltage level sufficient to switch to the low resistance state only those switching devices heated above room temperature by a thermal image. Additional means are provided to sample the switching devices at a second frequency greater than the first frequency and at a voltage level less than that of the first voltage level to maintain the switched devices in the low resistance state upon removal of the thermal image.
Abstract:
The present technology relates to a signal processing device and method, and a program that enable easier and more accurate failure detection. The signal processing device includes: an addition unit that adds test data for failure detection to valid data on which predetermined processing is to be performed, two or more samples processed in parallel in different paths having a same sample value in the test data; and a signal processing unit that performs the predetermined processing on the valid data and the test data that has been added to the valid data by a plurality of the paths. The present technology can be applied to in-car cameras.