公开(公告)号：US07260127B2

公开(公告)日：2007-08-21

申请号：US10934251

申请日：2004-09-03

申请人： Anthony D. Kurtz ,  Joseph R. Van DeWeert

发明人： Anthony D. Kurtz ,  Joseph R. Van DeWeert

IPC分类号： H01S3/16 ,  H01S3/14 ,  H01S3/06

CPC分类号： C30B29/12 ,  C30B23/00 ,  C30B33/04 ,  H01S3/0612 ,  H01S3/0809 ,  H01S3/163 ,  H01S3/1681 ,  H01S3/2375 ,  H01S3/2383

摘要： A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.

公开(公告)号：US20040028101A1

公开(公告)日：2004-02-12

申请号：US10119462

申请日：2002-08-06

发明人： Robert W. Byren ,  David S. Sudima

IPC分类号： H01S003/14

CPC分类号： H01S3/113 ,  H01S3/061 ,  H01S3/0617 ,  H01S3/094084 ,  H01S3/0941 ,  H01S3/1623 ,  H01S3/1643 ,  H01S3/1681

摘要： A solid state, laser light control device (20, 30) and material (10), and methods of producing same. The device (20, 30) and material (10) consist essentially of a host material (14) which contains: a dopant species (16) at a first valence state (a), the concentration of which increases with distance from the surface (18); and the same dopant species (16) at a second valence state (b), the concentration which decreases with distance from the surface (18). The method comprises the steps of: obtaining a doped solid state material (14); exposing the solid state material (14) to elevated temperature, for a period of time, in an oxidizing or reducing atmosphere. The elevated temperature and time of exposure are selected to change the valence state (a) of the dopant (16) in direct proportion to distance from the surface (18) of the solid state material (16). What is thereby produced is a solid state device (20, 30) in which the concentration of the dopant 16 at the second valence state (b) decreases with radius, the concentration of the dopant (16) at the first valence state (a) increases with radius, and the sum of these concentrations remains constant.

摘要翻译： 固态激光控制装置（20,30）和材料（10）及其制造方法。 装置（20,30）和材料（10）基本上由主体材料（14）组成，其包含：处于第一价态（a）的掺杂剂物质（16），其浓度随距离表面的距离而增加 18）; 和与第二价态（b）相同的掺杂剂物质（16），其浓度随距表面18的距离而减小。 该方法包括以下步骤：获得掺杂固体材料（14）; 在氧化或还原气氛中将固态材料（14）暴露于升高的温度一段时间。 选择升高的温度和曝光时间以与固态材料（16）的表面（18）的距离成正比的方式改变掺杂剂（16）的化合价态（a）。 由此产生的是固态装置（20,30），其中第二价态（b）的掺杂剂16的浓度随着半径而减小，掺杂剂（16）处于第一价态（a）的浓度， 半径增加，这些浓度的总和保持不变。

公开(公告)号：US20030193978A1

公开(公告)日：2003-10-16

申请号：US10120698

申请日：2002-04-11

发明人： Anthony D. Kurtz ,  Joseph R. Van DeWeert

IPC分类号： H01S003/14

CPC分类号： C30B29/12 ,  C30B23/00 ,  C30B33/04 ,  H01S3/0612 ,  H01S3/0809 ,  H01S3/163 ,  H01S3/1681 ,  H01S3/2375 ,  H01S3/2383

摘要： A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.

摘要翻译： 在衬底上生长薄层的离子晶体。 该晶体可以是任何类型的离子晶体，例如氯化钠或氯化钾。 晶体是所选化合物的纯形式，并且可能含有污染物，这些污染物将使所产生的色心的波长发生偏移。 在第一晶体层的顶部，沉积不同类型晶体的第二薄层，例如氟化锂或氟化钠。 当这两层用伽马射线照射时，它们将在辐射的点处形成彩色中心。 由于两个不同的离子晶体中心的晶体性质的差异，它们的色心将处于不同的波长。 当以其独特的吸收频率照射时，两个分离的离子晶体中的每一个将发射不同特征波长的光。 每个层可以分开制作。 顶层的吸收能量大于底层的吸收能，使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。 在两个叠加层中形成F中心的方法有很多种，例如通过加热特定化合物的阴离子层，然后将第二离子晶体沉积在第一离子晶体上，然后沉积 阴离子层在第二个晶体上，然后加热，以产生一个结构，将其延伸到不同的频率。

公开(公告)号：US4880613A

公开(公告)日：1989-11-14

申请号：US143114

申请日：1988-01-12

申请人： Shyuichi Satoh ,  Kazuwo Tsuji

发明人： Shyuichi Satoh ,  Kazuwo Tsuji

IPC分类号： C30B33/00 ,  H01S3/16

CPC分类号： H01S3/1681 ,  C30B29/04 ,  C30B33/00

摘要： A light emitting element comprising diamond which contains N-V color centers in a maximum optical density of of 0.01 to 3.5 in a direction of excitation light, Ib type nitrogen atoms in a maximum optical density not larger than 0.2 in a wavelength range of 530 to 610 nm and optionally H3 color centers, which element can be efficiently produced from artificial diamond by a combination of irradiation by an electron beam or a neutron beam and annealing.

公开(公告)号：US20050030991A1

公开(公告)日：2005-02-10

申请号：US10934251

申请日：2004-09-03

申请人： Anthony Kurtz ,  Joseph Van DeWeert

发明人： Anthony Kurtz ,  Joseph Van DeWeert

IPC分类号： H01S3/16 ,  H01S3/23

CPC分类号： C30B29/12 ,  C30B23/00 ,  C30B33/04 ,  H01S3/0612 ,  H01S3/0809 ,  H01S3/163 ,  H01S3/1681 ,  H01S3/2375 ,  H01S3/2383

摘要： A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.

摘要翻译： 在衬底上生长薄层的离子晶体。 该晶体可以是任何类型的离子晶体，例如氯化钠或氯化钾。 晶体是所选化合物的纯形式，并且可能含有污染物，这些污染物将使所产生的色心的波长发生偏移。 在第一晶体层的顶部，沉积不同类型晶体的第二薄层，例如氟化锂或氟化钠。 当这两层用伽马射线照射时，它们将在辐射的点处形成彩色中心。 由于两个不同的离子晶体中心的晶体性质的差异，它们的色心将处于不同的波长。 当以其独特的吸收频率照射时，两个分离的离子晶体中的每一个将发射不同特征波长的光。 每个层可以分开制作。 顶层的吸收能量大于底层的吸收能，使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。 在两个叠加层中形成F中心的方法有很多种，例如通过加热特定化合物的阴离子层，然后将第二离子晶体沉积在第一离子晶体上，然后沉积 阴离子层在第二个晶体上，然后加热，以产生一个结构，将其延伸到不同的频率。

公开(公告)号：US06795465B2

公开(公告)日：2004-09-21

申请号：US10120698

申请日：2002-04-11

申请人： Anthony D. Kurtz ,  Joseph R. Van DeWeert

发明人： Anthony D. Kurtz ,  Joseph R. Van DeWeert

IPC分类号： H01S316

CPC分类号： C30B29/12 ,  C30B23/00 ,  C30B33/04 ,  H01S3/0612 ,  H01S3/0809 ,  H01S3/163 ,  H01S3/1681 ,  H01S3/2375 ,  H01S3/2383

摘要： A thin layer of ionic crystal is grown on a substrate. The crystal could be any type of ionic crystal, such as sodium chloride or potassium chloride. The crystal is a pure form of the chosen compound and may contain contaminants which would shift the wavelength of created color centers. On top of the first crystal layer, a second thin layer of a different type of crystal is deposited, such as lithium fluoride or sodium fluoride. When these two layers are radiated with gamma rays, they will each form color centers at the spots radiated. Because of the difference in crystalline properties of the two different ionic crystal centers, their color centers would be at different wavelengths. Each of the two separate ionic crystals will emit light at different characteristic wavelengths when illuminated at their unique absorption frequencies. Each layer can be made to lase separately. The top layer has an absorption energy greater than that of the bottom layer, so that the layer energy of the bottom layer absorption peak will pass through the top layer and be absorbed only by the bottom layer. There are many ways of forming F-centers in the two superimposed layers, such as by the use of selective gamma radiation by heating of an anion layer of the particular compound and then depositing the second ionic crystal on the first ionic crystal and then depositing an anion layer on the second crystal and then heating to produce a structure which will lase it to the different frequencies.

摘要翻译： 在衬底上生长薄层的离子晶体。 该晶体可以是任何类型的离子晶体，例如氯化钠或氯化钾。 晶体是所选化合物的纯形式，并且可能含有污染物，这些污染物将使所产生的色心的波长发生偏移。 在第一晶体层的顶部，沉积不同类型晶体的第二薄层，例如氟化锂或氟化钠。 当这两层用伽马射线照射时，它们将在辐射的点处形成彩色中心。 由于两个不同的离子晶体中心的晶体性质的差异，它们的色心将处于不同的波长。 当以其独特的吸收频率照射时，两个分离的离子晶体中的每一个将发射不同特征波长的光。 每个层可以分开制作。 顶层的吸收能量大于底层的吸收能，使得底层吸收峰的层能量将通过顶层并且仅被底层吸收。 在两个叠加层中形成F中心的方法有很多种，例如通过加热特定化合物的阴离子层，然后将第二离子晶体沉积在第一离子晶体上，然后沉积 阴离子层在第二个晶体上，然后加热，以产生一个结构，将其延伸到不同的频率。

公开(公告)号：US20040109328A1

公开(公告)日：2004-06-10

申请号：US10621956

申请日：2003-07-16

申请人： Chevron U.S.A. Inc.

发明人： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC分类号： G02B005/128 ,  F21V007/04 ,  H01L033/00

CPC分类号： C23C16/27 ,  C23C16/278 ,  G02B1/111 ,  H01S3/14 ,  H01S3/163 ,  H01S3/1681 ,  Y10T428/30

摘要： Novel optical devices based on diamondoid-containing materials are disclosed. Materials that may be fabricated from diamondoids included diamondoid nucleated CVD films, diamondoid-containing CVD films, molecular crystals, and polymerized materials. Devices that may be fabricated from the diamondoid-containing materials disclosed herein include solid state dye lasers, semiconductor lasers, light emitting diodes, photodetectors, photoresistors, phototransistors, photovoltaic cells, solar cells, anti-reflection coatings, lenses, mirrors, pressure windows, optical waveguides, and particle and radiation detectors.

摘要翻译： 公开了基于含金刚石的材料的新型光学器件。 可以由金刚石制成的材料包括金刚石成核CVD膜，含金刚石的CVD膜，分子晶体和聚合材料。 可以由本文公开的含有金刚石的材料制造的器件包括固态染料激光器，半导体激光器，发光二极管，光电检测器，光敏电阻器，光电晶体管，光伏电池，太阳能电池，防反射涂层，透镜，反射镜，压力窗， 光波导，粒子和辐射探测器。

公开(公告)号：US4963755A

公开(公告)日：1990-10-16

申请号：US243534

申请日：1988-09-12

申请人： Yok Chen

发明人： Yok Chen

IPC分类号： C09K11/08 ,  C30B33/00 ,  H01S3/16

CPC分类号： H01S3/1681 ,  C09K11/0816 ,  C30B29/16 ,  C30B33/00

摘要： Refractory oxide crystals suitable for use in tunable lasers and a method for preparing the same are provided. The crystals are characterized by high quantum efficiency, high thermal stability, good crystal transparency, and a high percentage of useful luminescence. The method for preparation of the crystals involves removing substantially all the hydrogen, thermochemically reducing the crystal's oxygen content to produce oxygen (anion) vacancy defects, and subsequently irradiating the crystal with electrons to inactivate trace H.sup.- ions so that an increased amount of short lived F.sup.+ luminescence is produced when the crystal is optically excited.

摘要翻译： 提供适用于可调激光器的耐火氧化物晶体及其制备方法。 晶体的特征在于高量子效率，高热稳定性，良好的晶体透明度和高百分比的有用发光。 制备晶体的方法包括去除基本上所有的氢，热化学降低晶体的氧含量以产生氧（阴离子）空位缺陷，随后用电子照射晶体以灭活痕量H-离子，使得增加量的短寿命 当晶体被光学激发时，产生F +发光。

公开(公告)号：US4950625A

公开(公告)日：1990-08-21

申请号：US364693

申请日：1989-06-08

申请人： Takeru Nakashima ,  Shuichi Satoh ,  Kazuwo Tsuji

发明人： Takeru Nakashima ,  Shuichi Satoh ,  Kazuwo Tsuji

IPC分类号： C30B33/04 ,  B01J3/06 ,  C30B29/04 ,  C30B33/00 ,  H01S3/16

CPC分类号： H01S3/1681 ,  B01J3/062 ,  C30B29/04 ,  C30B33/00 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/069

摘要： A method of manufacturing a diamond laser crystal having an excellent laser efficiency is performed by first, preparing a synthetic type Ib diamond containing at least 60 volume percent of a (111) plane growth sector (43) is prepared. This synthetic diamond is then thermally treated under high temperature/high pressure, so that type Ib nitrogen contained in the synthetic diamond is converted to type IaA nitrogen. Thereafter an electron beam is applied to the synthetic diamond in order to generate vacancies in the synthetic diamond. Finally annealing is performed on the synthetic diamond to form H3 centers by coupling the type IaA nitrogen atoms contained in the synthetic diamond, with the vacancies. According to this method, the H3 centers can be formed in the synthetic type Ib diamond at high concentration, while formation of NV centers which become an obstacle to laser action, can be suppressed.

公开(公告)号：US4638485A

公开(公告)日：1987-01-20

申请号：US783978

申请日：1985-10-03

申请人： Werner Gellermann ,  Yihong Yang ,  Fritz Luty

发明人： Werner Gellermann ,  Yihong Yang ,  Fritz Luty

IPC分类号： H01S3/081 ,  H01S3/16

CPC分类号： H01S3/1681 ,  H01S3/0811

摘要： Vibrational emission from molecular defects in ionic crystals can be realized by dilute diatomic molecular defects such as, e.g., CN.sup.- molecules in alkali halide crystals. After association of F-centers to the CN.sup.- molecules, forming a new F-center/molecular defect pair, the emission can be pumped by optical F-center excitation through electronic-vibrational coupling. Using this coupling mechanism, laser action in the near infrared wavelength region is obtained between vibrational energy levels of the molecules while pumping the F-center/molecule defect in the visible wavelength range. The laser crystals are prepared by additively coloring a CN.sup.- doped alkali halide crystal and exposing the colored crystal to light having a wavelength capable of being absorbed by the electronic F-center/molecule defect transition.

摘要翻译： 离子晶体中的分子缺陷的振动发射可以通过稀释的双原子分子缺陷来实现，例如碱金属卤化物晶体中的CN-分子。 在F-中心与CN-分子缔合后，形成新的F-中心/分子缺陷对，可以通过电子 - 振动耦合的光学F中心激发来泵送发射。 使用该耦合机制，在分子的振动能级之间获得近红外波长区域的激光作用，同时泵浦可见光波长范围内的F中心/分子缺陷。 通过对CN-掺杂的碱金属卤化物晶体进行相加着色并将着色晶体暴露于具有能够被电子F中心/分子缺陷转变吸收的波长的光而制备激光晶体。