公开(公告)号：US08198737B2

公开(公告)日：2012-06-12

申请号：US12510274

申请日：2009-07-28

申请人： Changliang Zhang ,  Yingwei Jiang ,  Zhijie Wang ,  Wei Xiao

发明人： Changliang Zhang ,  Yingwei Jiang ,  Zhijie Wang ,  Wei Xiao

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48482 ,  H01L2224/48489 ,  H01L2224/48499 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/49175 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01L2224/78 ,  H01L2924/00

摘要： A method of forming a wire bond in a semiconductor device includes forming a first bump of a first composition proximate to a probe mark on a bond pad. A second bump of the first composition is formed adjacent to the first bump such that the first and second bumps are formed away from the probe mark. A wire of a second composition that is harder than the first composition is attached on top of the first and second bumps to form an interconnection.

摘要翻译： 在半导体器件中形成引线接合的方法包括在接合焊盘上形成靠近探针标记的第一组合物的第一凸点。 第一组合物的第二凸起形成为与第一凸起相邻，使得第一和第二凸块形成为远离探针标记。 比第一组合物硬的第二组合物的导线附接在第一和第二凸块的顶部上以形成互连。

公开(公告)号：US20100314754A1

公开(公告)日：2010-12-16

申请号：US12510274

申请日：2009-07-28

申请人： Changliang ZHANG ,  Yingwei Jiang ,  Zhijie Wang ,  Wei Xiao

发明人： Changliang ZHANG ,  Yingwei Jiang ,  Zhijie Wang ,  Wei Xiao

IPC分类号： H01L23/498 ,  H01L21/768

CPC分类号： H01L24/85 ,  H01L24/03 ,  H01L24/05 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48482 ,  H01L2224/48489 ,  H01L2224/48499 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48824 ,  H01L2224/49175 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85205 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/15787 ,  H01L2924/30105 ,  H01L2224/78 ,  H01L2924/00

摘要： A method of forming a wire bond in a semiconductor device includes forming a first bump of a first composition proximate to a probe mark on a bond pad. A second bump of the first composition is formed adjacent to the first bump such that the first and second bumps are formed away from the probe mark. A wire of a second composition that is harder than the first composition is attached on top of the first and second bumps to form an interconnection.

摘要翻译： 在半导体器件中形成引线接合的方法包括在接合焊盘上形成靠近探针标记的第一组合物的第一凸点。 第一组合物的第二凸起形成为与第一凸起相邻，使得第一和第二凸块形成为远离探针标记。 比第一组合物硬的第二组合物的导线附接在第一和第二凸块的顶部上以形成互连。