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    Semiconductor devices having surface state control and method of manufacture
    2.
    发明授权
    Semiconductor devices having surface state control and method of manufacture 失效
    具有表面状态控制的半导体器件和制造方法

    公开(公告)号：US3956025A

    公开(公告)日：1976-05-11

    申请号：US454647

    申请日：1974-03-25

    Applicant: Hermann Statz ,  Wolfgang M. Feist

    Inventor： Hermann Statz ,  Wolfgang M. Feist

    IPC: H01J29/45 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/06 ,  H01L29/78 ,  H01L31/00 ,  H01L31/0216 ,  H01L21/265

    CPC classification number: H01L31/0216 ,  H01J29/451 ,  H01J29/455 ,  H01J9/233 ,  H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L29/0611 ,  H01L29/78 ,  H01L31/00 ,  Y10S257/917

    Abstract: A semiconductor structure having a surface insulating layer formed as a grid with charges implanted in the insulating material to prevent inversion and, hence, channeling between adjacent semiconductor regions, preferably for use in nonblooming vidicon. The method of manufacturing such a structure uses ion implantation to create immobile positive charges in a grid pattern in an insulating layer in regions spaced from the interface between the insulating layer and the semiconductor body. The insulating layer is of sufficient thickness that substantially all of the charge sites in the insulating layer are separated from the outer surface of the insulator by a sufficient distance to effectively prevent a negative electric field from reaching into the silicon.

    Abstract translation: 具有表面绝缘层的半导体结构，其形成为格栅，电荷注入绝缘材料中，以防止反转，并因此在相邻的半导体区之间引导沟道，优选用于不起伏的虚像。 制造这种结构的方法使用离子注入来在与绝缘层和半导体本体之间的界面间隔开的区域中的绝缘层中以栅格图案形成固定的正电荷。 绝缘层具有足够的厚度，绝缘层中的基本上所有的电荷位置与绝缘体的外表面分开足够的距离，以有效地防止负电场进入硅。

    Semiconductor target with integral beam shield
    3.
    发明授权
    Semiconductor target with integral beam shield 失效
    具有集成光束屏蔽的半导体靶

    公开(公告)号：US3893157A

    公开(公告)日：1975-07-01

    申请号：US36653473

    申请日：1973-06-04

    Applicant: SIGNETICS CORP

    Inventor： SILZARS ARIS ,  BALLONOFF AARON

    IPC: H01J29/45 ,  H01L21/00 ,  H01L23/29 ,  H01L27/00 ,  H01L5/00

    CPC classification number: H01L23/291 ,  H01J9/233 ,  H01J29/455 ,  H01L21/00 ,  H01L27/00 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A radiation resistance PN junction diode with a radiation shield which is attached to the semiconductor device and extends over, but is separated from, portions of the device which it is desired to have shielded from radiation. The purpose of the shield is to provide a radiation resistant semiconductor target for use in planar electron bombarded semiconductor devices, electron beam recorders, and other devices requiring periodic or continuous electron beam or other low energy radiation monitoring. In accordance with a preferred method of the invention, the electron beam shield is fabricated simultaneously on each of a plurality of PN junction diodes in an array on a semiconductor wafer.

    Abstract translation: 具有辐射屏蔽的辐射电阻PN结二极管，其附接到半导体器件并且延伸超过该器件的期望与辐射屏蔽的部分，但是与其隔开。 屏蔽的目的是提供一种用于平面电子轰击的半导体器件，电子束记录器和需要周期性或连续电子束或其他低能量辐射监测的其它器件的耐辐射半导体靶。 根据本发明的优选方法，在半导体晶片上的阵列中的多个PN结二极管的每一个上同时制造电子束屏蔽。

    Fluidic masking
    4.
    发明授权
    Fluidic masking 失效

    公开(公告)号：US3823048A

    公开(公告)日：1974-07-09

    申请号：US28090572

    申请日：1972-08-15

    Applicant: WESTERN ELECTRIC CO

    Inventor： HETRICH H

    IPC: H01J9/233 ,  H01J29/45 ,  H01L21/308 ,  H01L7/50

    CPC classification number: H01J9/233 ,  H01J29/455 ,  H01L21/3081

    Abstract: IN MAKING A TARGET FOR A TELEVISION CAMERA TUBE, IT IS NECESSARY TO THIN THE BACKSIDE OF A SEMICONDUCTIVE SUBSTRATE, WHICH IS OPPOSITE A FACE HAVING A DIODE ARRAY THEREON. TO THIN THE SUBSTRATE, IT IS POSITIONED FACE DOWN ON A FLLUID NONDELETERIOUS TO THE SUBSTRATE AND DIOD ARRAY. THE FLUID IS CONTAINED IN A CAVITY OF A HOLDING DEVICE. THE POSITIONING IS SUCH THAT THERE IS NO SPACE BETWEEN THE FLUID AND THE SUBSTRATE. AN APERTURED TOP MEMBER IS THEN MOUNTED ON THE SUBSTRATE AND THE HOLDING DEVICE TO RETAIN THE SUBSTRATE ON THE FLUID. THE ASSEMBLY OF THE HOLDING DEVICE AND TOP MEMBER WITH THE SUBSTRATE THEREBETWEEN IS IMMERSED AND ROATED IN AN ETCHANT TO THIN THE BBACKSIDE OF THE SUBSTRATE THROUGH THE APERTURE OF THE TOP MEMBER. THE FLUID PROVIDES A TIGHT SEAL ON THE FACE OF THE SUBSTRATE TO PREVENT THE ETCHANT FROM DAMAGING SUCH FACE AND THE DIODE ARRAYL THEREON A VENT EXTENDING FROM THE CAVITY OF THE HOLDING DEVICE TO ITS OUTER EDGE ASSIST IN THE SUBSEQUENT REMOVAL OF THE SUBSTRATE FROM THE CAVITY.

    Color camera tube target having integral indexing structure
    5.
    发明授权
    Color camera tube target having integral indexing structure 失效
    具有一体化指标结构的彩色相机管道目标

    公开(公告)号：US3786321A

    公开(公告)日：1974-01-15

    申请号：US3786321D

    申请日：1973-03-08

    Applicant: BELL TELEPHONE LABOR INC

    Inventor： MATHEWS J

    IPC: H01J29/45 ,  H01J31/46 ,  H01L27/00 ,  H01L15/00

    CPC classification number: H01J31/46 ,  H01J29/455 ,  H01L27/00

    Abstract: In color camera tubes having capacitance compensated indexing strips, two sets of interdigitated conductive indexing strips are placed on the cathode side of a camera tube target onto which the scene is focused. These conducting strips, which enable referencing of the electron beam position, are formed in a highly precise pattern by means of conductivity type zones formed within the semiconductor target itself. Typically, they may be fabricated by solid state diffusion or by ion implantation of a significant impurity in the same manner as is used to form the pn junction diodes which comprise the imaging means of the target. Advantageously, the conductivity type zones are covered by means of selective electrodeposition with a thin metallic plating to enhance their performance.

    Abstract translation: 在具有电容补偿分度条的彩色照相机管中，将两组交错的导电分度条放置在相机管目标的阴极侧，场景被聚焦到该目标上。 通过形成在半导体目标本身内的导电类型区，能够以高精度图案形成能够参照电子束位置的这些导电条。 通常，它们可以通过固态扩散或通过与用于形成包含靶的成像装置的p-n结二极管相同的方式离子注入有效杂质来制造。 有利地，通过用薄金属电镀的选择性电沉积来覆盖导电类型区域以增强其性能。

    Low beam velocity retina for Schottky infrared vidicons
    10.
    发明授权
    Low beam velocity retina for Schottky infrared vidicons 失效
    肖特基红外视网膜的低光束速度视网膜

    公开(公告)号：US4005327A

    公开(公告)日：1977-01-25

    申请号：US625799

    申请日：1975-10-28

    Applicant: Sven A. Roosild ,  Freeman D. Shepherd, Jr. ,  Andrew C. Yang

    Inventor： Sven A. Roosild ,  Freeman D. Shepherd, Jr. ,  Andrew C. Yang

    IPC: H01J29/45 ,  H01J31/49

    CPC classification number: H01J29/455

    Abstract: A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.

    Abstract translation: 一种用于使用低电压电子束的红外摄像机电视摄像机管的固态感测视网膜，由具有n型衬底和二维阵列的p型岛的单片硅晶片组成，每个岛具有肖特基电极光电发射器和衬底接触 总线，欧姆接触焊盘允许对肖特基电极下方的p型区域充电。

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