Optical device
    5.
    发明授权

    公开(公告)号:US11650411B2

    公开(公告)日:2023-05-16

    申请号:US16762174

    申请日:2018-09-04

    Abstract: In an optical device, when viewed from a first direction, first, second, third, and fourth movable comb electrodes are respectively disposed between a first support portion and a first end of a movable unit, between a second support portion and a second end of the movable unit, between a third support portion and the first end, and between a fourth support portion and the second end of the movable unit. The first and second support portions respectively include first and second rib portions formed so that the thickness of each of the first and second support portions becomes greater than the thickness of the first torsion bar. The third and fourth support portions respectively include third and fourth rib portions formed so that the thickness of each of the third and fourth support portions becomes greater than the thickness of the second torsion bar.

    MICRO-DEVICE STRUCTURES WITH ETCH HOLES
    7.
    发明公开

    公开(公告)号:US20240199413A1

    公开(公告)日:2024-06-20

    申请号:US18594647

    申请日:2024-03-04

    Inventor: Pierluigi Rubino

    Abstract: A micro-device structure comprises a source substrate having a sacrificial layer comprising a sacrificial portion adjacent to an anchor portion, a micro-device disposed completely over the sacrificial portion, the micro-device having a top side opposite the sacrificial portion and a bottom side adjacent to the sacrificial portion and comprising an etch hole that extends through the micro-device from the top side to the bottom side, and a tether that physically connects the micro-device to the anchor portion. A micro-device structure comprises a micro-device disposed on a target substrate. Micro-devices can be 10 any one or more of an antenna, a micro-heater, a power device, a MEMs device, and a micro-fluidic reservoir.

    Dopant selective reactive ion etching of silicon carbide
    10.
    发明授权
    Dopant selective reactive ion etching of silicon carbide 有权
    掺杂剂选择性反应离子蚀刻碳化硅

    公开(公告)号:US09452926B1

    公开(公告)日:2016-09-27

    申请号:US13561359

    申请日:2012-07-30

    Applicant: Robert Okojie

    Inventor: Robert Okojie

    Abstract: A method for selectively etching a substrate is provided. In one embodiment, an epilayer is grown on top of the substrate. A resistive element may be defined and etched into the epilayer. On the other side of the substrate, the substrate is selectively etched up to the resistive element, leaving a suspended resistive element.

    Abstract translation: 提供了一种用于选择性蚀刻衬底的方法。 在一个实施例中,在衬底的顶部上生长外延层。 可以限定电阻元件并蚀刻到外延层中。 在衬底的另一侧,衬底被选择性蚀刻到电阻元件上,留下一个悬置的电阻元件。

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