知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

27 records (took 0.013 seconds)

    Out-of plane travel restriction structures
    1.
    发明授权
    Out-of plane travel restriction structures 有权
    飞机外行程限制结构

    公开(公告)号：US09571008B2

    公开(公告)日：2017-02-14

    申请号：US14112091

    申请日：2011-06-28

    Applicant: Donald J. Milligan ,  Rodney L. Alley ,  Peter G. Hartwell ,  Robert G. Walmsley

    Inventor： Donald J. Milligan ,  Rodney L. Alley ,  Peter G. Hartwell ,  Robert G. Walmsley

    IPC: H01L29/84 ,  H02N1/00 ,  B81B3/00 ,  H01H3/60 ,  B81C1/00 ,  G01P15/08

    CPC classification number: H02N1/00 ,  B81B3/0051 ,  B81B3/0054 ,  B81B2201/0235 ,  B81B2203/053 ,  B81C1/00388 ,  G01P2015/0871 ,  H01H3/60 ,  H01L29/84

    Abstract: The present disclosure includes structures and methods of forming structures for restricting out-of-plane travel. One example of forming such structures includes providing a first wafer 100, 220 comprising a bond layer of a particular thickness 101, 221 on a surface of a substrate material 105, 225, removing the bond layer 101, 221 in a first area 103-1, 103-2, 223 to expose the surface of the substrate material 105, 225, applying a mask to at least a portion of a remaining bond layer 109-1, 109-4, 229-1, 229-3 and a portion of the exposed surface of the substrate material in the first area 109-2, 109-3, 229-2 to form a second area exposed on the surface of the substrate material 105, 225, etching the second area to form a cavity 110, 230 in the substrate material 105, 225 and the bond layer 101, 221, and forming by the etching, in the cavity 110, 230, a structure 113-1, 113-2, 233 for restricting out-of-plane travel, where the structure 113-1, 113-2, 233 has a particular height from a bottom of the cavity 115, 235 determined by the particular thickness of the bond layer 101, 221.

    Abstract translation: 本公开包括形成用于限制飞机外行进的结构的结构和方法。 形成这种结构的一个实例包括提供第一晶片100,220，第一晶片100,220包括在基板材料105,225的表面上的特定厚度的接合层221，在第一区103-122中去除接合层101,221 ，103-2,223，以暴露衬底材料105,225的表面，将掩模施加到剩余结合层109-1,109-4,229-1,229-3的至少一部分，以及一部分 在第一区域109-2,103-3,229-2中的衬底材料的暴露表面，以形成暴露在衬底材料105,225的表面上的第二区域，蚀刻第二区域以形成空腔110,230 在衬底材料105,225和接合层101,221中，并且通过蚀刻形成在空腔110,230中的用于限制平面外行进的结构113-1,113-2,233，其中 结构113-1,113-2,233具有由空腔115,235的底部由结合层101,221的特定厚度确定的特定高度。

    POLARIZER, METHOD OF MANUFACTURING THE POLARIZER AND DISPLAY PANEL HAVING THE POLARIZER
    2.
    发明申请
    POLARIZER, METHOD OF MANUFACTURING THE POLARIZER AND DISPLAY PANEL HAVING THE POLARIZER 审中-公开
    极化器，制造极化器的方法和显示具有偏振器的面板

    公开(公告)号：US20160266295A1

    公开(公告)日：2016-09-15

    申请号：US14846471

    申请日：2015-09-04

    Applicant: Samsung Display Co., Ltd.

    Inventor： Sung-Won CHO ,  Jung-Ha SON ,  Su-Bin BAE ,  Yun-Jong YEO ,  Joo-Hyung LEE

    IPC: G02B5/30 ,  G02F1/1335

    CPC classification number: G02B5/3058 ,  B81C1/00388 ,  B81C1/00404 ,  B81C2201/0149 ,  C09K13/00 ,  C23F4/00 ,  G02F2001/133548 ,  G03F7/0041 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3088 ,  H01L21/31056 ,  H01L21/31111 ,  H01L21/31116

    Abstract: A method of manufacturing a polarizer includes forming a first layer on a base substrate, forming a first partition wall layer on the first layer, forming a second partition wall layer on the first partition wall, forming a plurality of first partition wall patterns and a plurality of second partition walls disposed on the first partition wall patterns by etching the first partition wall and the second partition wall at the same time, forming a block copolymer layer on the first layer on which the plurality of first partition wall patterns are formed, forming a plurality of fine patterns from the block copolymer layer, and patterning the first layer using the fine patterns and the second partition wall patterns as a mask.

    Abstract translation: 偏振片的制造方法包括在基底基板上形成第一层，在第一层上形成第一分隔壁层，在第一分隔壁上形成第二分隔壁层，形成多个第一隔壁图案和多个第一分隔壁图案 通过同时蚀刻第一分隔壁和第二分隔壁而在第一分隔壁图案上设置的第二分隔壁，在形成有多个第一分隔壁图案的第一层上形成嵌段共聚物层，形成 从嵌段共聚物层形成多个精细图案，并使用精细图案和第二分隔壁图案作为掩模对第一层图案化。

    METHOD FOR MANUFACTURING A STRUCTURED SURFACE
    6.
    发明申请
    METHOD FOR MANUFACTURING A STRUCTURED SURFACE 有权
    制造结构表面的方法

    公开(公告)号：US20150140717A1

    公开(公告)日：2015-05-21

    申请号：US14543116

    申请日：2014-11-17

    Applicant: Robert Bosch GmbH

    Inventor： Andrea URBAN

    IPC: B81C1/00 ,  B81C99/00

    CPC classification number: B81C1/00857 ,  B81C1/00388 ,  B81C1/00531 ,  B81C1/00849 ,  B81C99/0025 ,  B81C2201/0123 ,  B81C2201/0125 ,  B81C2201/0132

    Abstract: A method is described for manufacturing a micromechanical structure, in which a structured surface is created in a substrate by an etching method in a first method step, and residues are at least partially removed from the structured surface in a second method step. In the second method step, an ambient pressure for the substrate which is lower than 60 Pa is set and a substrate temperature which is higher than 150° C. is set.

    Abstract translation: 描述了一种用于制造微机械结构的方法，其中通过第一方法步骤中的蚀刻方法在衬底中形成结构化表面，并且在第二方法步骤中至少部分地从结构化表面除去残余物。 在第二方法步骤中，设定低于60Pa的基板的环境压力，设定高于150℃的基板温度。

    OUT-OF-PLANE TRAVEL RESTRICTION STRUCTURES
    7.
    发明申请
    OUT-OF-PLANE TRAVEL RESTRICTION STRUCTURES 有权
    超平面旅行限制结构

    公开(公告)号：US20140042869A1

    公开(公告)日：2014-02-13

    申请号：US14112091

    申请日：2011-06-28

    Applicant: Donald J. Milligan ,  Rodney L. Alley ,  Peter G. Hartwell ,  Robet G. Walmsley

    Inventor： Donald J. Milligan ,  Rodney L. Alley ,  Peter G. Hartwell ,  Robet G. Walmsley

    IPC: H02N1/00 ,  B81C1/00

    CPC classification number: H02N1/00 ,  B81B3/0051 ,  B81B3/0054 ,  B81B2201/0235 ,  B81B2203/053 ,  B81C1/00388 ,  G01P2015/0871 ,  H01H3/60 ,  H01L29/84

    Abstract: The present disclosure includes structures and methods of forming structures for restricting out-of-plane travel. One example of forming such structures includes providing a first wafer 100, 220 comprising a bond layer of a particular thickness 101, 221 on a surface of a substrate material 105, 225, removing the bond layer 101, 221 in a first area 103-1, 103-2, 223 to expose the surface of the substrate material 105, 225, applying a mask to at least a portion of a remaining bond layer 109-1, 109-4, 229-1, 229-3 and a portion of the exposed surface of the substrate material in the first area 109-2, 109-3, 229-2 to form a second area exposed on the surface of the substrate material 105, 225, etching the second area to form a cavity 110, 230 in the substrate material 105, 225 and the bond layer 101, 221, and forming by the etching, in the cavity 110, 230, a structure 113-1, 113-2, 233 for restricting out-of-plane travel, where the structure 113-1, 113-2, 233 has a particular height from a bottom of the cavity 115, 235 determined by the particular thickness of the bond layer 101, 221.

    Abstract translation: 本公开包括形成用于限制飞机外行进的结构的结构和方法。 形成这种结构的一个实例包括提供第一晶片100,220，第一晶片100,220包括在衬底材料105,225的表面上的特定厚度101,221的接合层，在第一区域103-1-1中去除接合层101,221 ，103-2,223，以暴露衬底材料105,225的表面，将掩模施加到剩余结合层109-1,109-4,229-1,229-3的至少一部分，以及一部分 在第一区域109-2,103-3,229-2中的衬底材料的暴露表面，以形成暴露在衬底材料105,225的表面上的第二区域，蚀刻第二区域以形成空腔110,230 在衬底材料105,225和接合层101,221中，并且通过蚀刻形成在空腔110,230中的用于限制平面外行进的结构113-1,113-2,233，其中 结构113-1,113-2,233具有由空腔115,235的底部由结合层101,221的特定厚度确定的特定高度。

Patent Agency Ranking