公开(公告)号：US10351950B2

公开(公告)日：2019-07-16

申请号：US15033071

申请日：2014-11-21

申请人： Ultratech, Inc.

发明人： Mark Sowa ,  Robert Kane ,  Michael Sershen

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01J37/32 ,  C23C16/50 ,  C23C16/52

摘要： An improved Plasma Enhanced Atomic Layer Deposition (PEALD) system and related operating methods are disclosed. A vacuum reaction chamber includes a vacuum system that separates a first outflow from the reaction chamber, comprising unreacted first precursor, from a second outflow from the reaction chamber, comprising second precursor and any reaction by products from the reaction of the second precursor with the coating surfaces. A trap, including trap material surfaces, is provided to remove first precursor from the first outflow when the first precursor reacts with the trap material surfaces. When the second precursor includes a plasma generated material, the second precursor is not passed through the trap. An alternate second precursor source injects a suitable second precursor into the trap to complete a material deposition layer onto the trap surfaces thereby preparing the trap material surfaces to react with the first precursor on the next material deposition cycle.

公开(公告)号：US10032883B2

公开(公告)日：2018-07-24

申请号：US15236430

申请日：2016-08-13

申请人： Ultratech, Inc.

发明人： Oleg Gluschenkov ,  Rajendran Krishnasamy ,  Kathryn T. Schonenberg

IPC分类号： H01L21/336 ,  H01L29/66 ,  H01L29/08 ,  H01L29/737 ,  H01L21/225 ,  H01L21/265 ,  H01L21/324 ,  H01L29/10

CPC分类号： H01L29/66242 ,  H01L21/2253 ,  H01L21/26513 ,  H01L21/324 ,  H01L29/0821 ,  H01L29/0826 ,  H01L29/1004 ,  H01L29/7378

摘要： Disclosed is an improved semiconductor structure (e.g., a silicon germanium (SiGe) hetero-junction bipolar transistor) having a narrow essentially interstitial-free SIC pedestal with minimal overlap of the extrinsic base. Also, disclosed is a method of forming the transistor which uses laser annealing, as opposed to rapid thermal annealing, of the SIC pedestal to produce both a narrow SIC pedestal and an essentially interstitial-free collector. Thus, the resulting SiGe HBT transistor can be produced with narrower base and collector space-charge regions than can be achieved with conventional technology.

公开(公告)号：US10016843B2

公开(公告)日：2018-07-10

申请号：US15064634

申请日：2016-03-09

申请人： Ultratech, Inc.

发明人： Yun Wang

IPC分类号： H01S3/00 ,  H01L21/268 ,  H01L21/324 ,  H01L21/67 ,  B23K26/06 ,  B23K26/0622 ,  B23K26/00 ,  B23K26/073 ,  B23K26/082 ,  B23K26/352 ,  B23K26/066 ,  B23K101/40 ,  B23K103/00

CPC分类号： B23K26/0622 ,  B23K26/0006 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/324 ,  H01S3/0071 ,  H01S3/0085

摘要： Systems and methods for reducing pulsed laser beam profile non-uniformities for laser annealing are disclosed. The methods include directing an initial pulsed laser beam along an optical axis, and imparting to each light pulse a time-varying angular deflection relative to the optical axis. This forms a new laser beam wherein each light pulse is smeared out over an amount of spatial deflection δ sufficient to reduce the micro-scale intensity variations in the laser beam. The new laser beam is then used to form the line image, which has better intensity uniformity as compared using the initial laser beam to form the line image.

公开(公告)号：US09777371B2

公开(公告)日：2017-10-03

申请号：US13203602

申请日：2010-02-26

申请人： Roger R. Coutu ,  Jill Svenja Becker ,  Ganesh M. Sundaram ,  Eric W. Deguns

发明人： Roger R. Coutu ,  Jill Svenja Becker ,  Ganesh M. Sundaram ,  Eric W. Deguns

IPC分类号： C23C16/455 ,  C23C16/44

CPC分类号： C23C16/4401 ,  C23C16/45504 ,  C23C16/45546 ,  C23C16/45582

摘要： A gas deposition system (1000) configured as a dual-chamber “tower” includes a frame (1140) for supporting two reaction chamber assemblies (3000), one vertically above the other. Each chamber assembly (3000) includes an outer wall assembly surrounding a hollow chamber (3070) sized to receive a single generation 4.5 (GEN 4.5) glass plate substrate through a load port. The substrate is disposed horizontally inside the hollow chamber (3070) and the chamber assembly (3000) includes removable and cleanable triangular shaped input (3150) and output (3250) plenums disposed external to the hollow chamber (3070) and configured to produce substantially horizontally directed laminar gas flow over a top surface of the substrate. Each chamber includes a cleanable and removable chamber liner assembly (6000) disposed inside the hollow chamber (3070) to contain precursor gases therein thereby preventing contamination of chamber outer walls (3010, 3020, 3030, 3040).

公开(公告)号：US09556519B2

公开(公告)日：2017-01-31

申请号：US13304676

申请日：2011-11-27

申请人： Douwe Johannes Monsma ,  Jill Svenja Becker

发明人： Douwe Johannes Monsma ,  Jill Svenja Becker

IPC分类号： C23C16/455 ,  C23C16/44 ,  B01D50/00 ,  B01D53/04

CPC分类号： C23C16/45525 ,  B01D53/0407 ,  B01D2258/0216 ,  C23C16/44 ,  C23C16/4412 ,  C23C16/45544

摘要： Vapor deposition systems and methods associated with the same are provided. The systems may be designed to include features that can promote high quality deposition; simplify manufacture, modification and use; as well as, reduce the footprint of the system, amongst other advantages.

摘要翻译： 提供蒸气沉积系统和与之相关的方法。 该系统可以被设计成包括能够促进高质量沉积的特征; 简化制造，修改和使用; 以及减少系统的占地面积等优点。

公开(公告)号：US20160306177A1

公开(公告)日：2016-10-20

申请号：US15191941

申请日：2016-06-24

申请人： Ultratech, Inc.

发明人： Serguei Anikitchev

IPC分类号： G02B27/09 ,  G02B17/06 ,  H01L21/268 ,  B23K26/082 ,  H01L21/225 ,  B23K26/06 ,  B23K26/073 ,  B23K26/00 ,  G02B17/00 ,  H01L21/324

CPC分类号： G02B27/0927 ,  B23K26/0006 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/083 ,  B23K26/352 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  G02B17/008 ,  G02B17/061 ,  G02B27/0983 ,  G02B27/0988 ,  H01L21/2253 ,  H01L21/268 ,  H01L21/322 ,  H01L21/324 ,  H01L21/428 ,  H01L21/477

摘要： A line-forming optical system and method are disclosed that form a line image with high-efficiency. A method includes forming a laser beam having a first intensity profile with a Gaussian distribution in at least a first direction and passing at least 50% of the laser beam in the first direction to form a first transmitted light. The method also includes: focusing the first transmitted light at an intermediate image plane to define a second intensity profile having a central peak and first side peaks immediately adjacent the central peak; then truncating the second intensity profile within each of first side peaks to define a second transmitted light; and then forming the line image at an image plane from the second transmitted light.

公开(公告)号：US09411163B2

公开(公告)日：2016-08-09

申请号：US14744207

申请日：2015-06-19

申请人： Ultratech, Inc.

发明人： Serguei Anikitchev

IPC分类号： G02B27/09 ,  B23K26/06 ,  H01L21/477 ,  B23K26/00 ,  H01L21/324 ,  H01L21/322 ,  G02B17/06 ,  H01L21/428 ,  B23K26/073 ,  B23K26/08

CPC分类号： G02B27/0927 ,  B23K26/0006 ,  B23K26/0643 ,  B23K26/0648 ,  B23K26/066 ,  B23K26/0738 ,  B23K26/082 ,  B23K26/0823 ,  B23K26/083 ,  B23K26/352 ,  B23K26/354 ,  B23K2101/40 ,  B23K2103/56 ,  G02B17/008 ,  G02B17/061 ,  G02B27/0983 ,  G02B27/0988 ,  H01L21/2253 ,  H01L21/268 ,  H01L21/322 ,  H01L21/324 ,  H01L21/428 ,  H01L21/477

摘要： A line-forming optical system and method are disclosed that form a line image with high-efficiency. A method includes forming a laser beam having a first intensity profile with a Gaussian distribution in at least a first direction and passing at least 50% of the laser beam in the first direction to form a first transmitted light. The method also includes: focusing the first transmitted light at an intermediate image plane to define a second intensity profile having a central peak and first side peaks immediately adjacent the central peak; then truncating the second intensity profile within each of first side peaks to define a second transmitted light; and then forming the line image at an image plane from the second transmitted light.

摘要翻译： 公开了以高效率形成线图像的线形成光学系统和方法。 一种方法包括在至少第一方向上形成具有高斯分布的第一强度分布的激光束，并使激光束的至少50％沿第一方向通过以形成第一透射光。 该方法还包括：将第一透射光聚焦在中间像平面处，以限定具有中心峰的第二强度分布，并且紧邻中心峰的第一侧峰; 然后截断每个第一侧峰内的第二强度分布，以限定第二透射光; 然后从第二透射光在像平面处形成线图像。

公开(公告)号：US09343307B2

公开(公告)日：2016-05-17

申请号：US14497006

申请日：2014-09-25

申请人： Ultratech, Inc.

发明人： Serguei Anikitchev

IPC分类号： H01L21/02 ,  H01L21/324 ,  H01L21/268 ,  B23K26/06 ,  B23K26/073

CPC分类号： H01L21/02683 ,  B23K26/0608 ,  B23K26/0736 ,  H01L21/02532 ,  H01L21/268 ,  H01L21/324

摘要： The disclosure is directed to laser spike annealing using fiber lasers. The method includes performing laser spike annealing of a surface of a wafer by: generating with a plurality of fiber laser systems respective CW output radiation beams that partially overlap at the wafer surface to form an elongate annealing image having a long axis and a length LA along the long axis; heating at least a region of the wafer to a pre-anneal temperature TPA; and scanning the elongate annealing image over the wafer surface and within the pre-heat region so that the annealing image has a dwell time tD in the range 30 ns≦tD≦10 ms and raises the wafer surface temperature to an annealing temperature TA.

公开(公告)号：US20160115596A1

公开(公告)日：2016-04-28

申请号：US14957273

申请日：2015-12-02

申请人： Ultratech, Inc.

发明人： Michael J. Sershen ,  Ganesh M. Sundaram ,  Roger R. Coutu ,  Jill Svenja Becker ,  Mark J. Dalberth

IPC分类号： C23C16/455 ,  C23C16/44

CPC分类号： C23C16/45574 ,  C23C16/4412 ,  C23C16/453 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45557 ,  C23C16/4584 ,  C23C16/545

摘要： An ALD coating method to provide a coating surface on a substrate is provided. The ALD coating method comprises: providing a deposition heading including a unit cell having a first precursor nozzle assembly and a second precursor nozzle assembly; emitting a first precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; emitting a second precursor from the first precursor nozzle assembly into chamber under atmospheric conditions in a direction substantially normal to the coating surface; removing moving the substrate under the deposition head such that the first precursor is directed onto a first area of the coating surface prior to the second precursor being directed onto the first area of the coating surface.

摘要翻译： 提供了一种在基板上提供涂层表面的ALD涂覆方法。 ALD涂覆方法包括：提供包括具有第一前体喷嘴组件和第二前体喷嘴组件的单元的沉积标题; 在大气条件下沿基本上垂直于涂层表面的方向将第一前体从第一前体喷嘴组件发射到室中; 在大气条件下沿基本上垂直于涂层表面的方向将第二前体从第一前体喷嘴组件发射到室中; 去除在沉积头下方移动衬底，使得第一前体在第二前体被引导到涂层表面的第一区域之前被引导到涂层表面的第一区域上。

公开(公告)号：US09302348B2

公开(公告)日：2016-04-05

申请号：US13646673

申请日：2012-10-06

申请人： Yun Wang ,  Andrew M. Hawryluk

发明人： Yun Wang ,  Andrew M. Hawryluk

IPC分类号： F27D11/00 ,  B23K26/00 ,  B23K26/12 ,  B23K26/18 ,  H01L21/268 ,  H01L21/28 ,  H01L21/324 ,  B23K26/03 ,  B23K26/06 ,  B23K26/073 ,  B23K26/08

CPC分类号： B23K26/127 ,  B23K26/0006 ,  B23K26/034 ,  B23K26/0608 ,  B23K26/0622 ,  B23K26/0738 ,  B23K26/0853 ,  B23K26/18 ,  B23K26/354 ,  B23K2103/56 ,  H01L21/268 ,  H01L21/28035 ,  H01L21/324

摘要： Systems and methods for performing ultrafast laser annealing in a manner that reduces pattern density effects in integrated circuit manufacturing are disclosed. The method includes scanning at least one first laser beam over the patterned surface of a substrate. The at least one first laser beam is configured to heat the patterned surface to a non-melt temperature Tnonmelt that is within about 400° C. of the melt temperature Tmelt. The method also includes scanning at least one second laser beam over the patterned surface and relative to the first laser beam. The at least one second laser beam is pulsed and is configured to heat the patterned surface from the non-melt temperature provided by the at least one first laser beam up to the melt temperature.

摘要翻译： 公开了以降低集成电路制造中的图案密度效应的方式进行超快速激光退火的系统和方法。 该方法包括在衬底的图案化表面上扫描至少一个第一激光束。 至少一个第一激光束被配置为将图案化表面加热到熔融温度Tmelt在约400℃以内的非熔融温度Tnonmelt。 该方法还包括在图案化表面上并相对于第一激光束扫描至少一个第二激光束。 所述至少一个第二激光束是脉冲的并且被配置为将图案化表面从由至​​少一个第一激光束提供的非熔化温度加热至熔融温度。