公开(公告)号：US4617421A

公开(公告)日：1986-10-14

申请号：US718970

申请日：1985-04-01

申请人： Prem Nath ,  Masatsugu Izu ,  Herbert C. Ovshinsky ,  Avtar Singh

发明人： Prem Nath ,  Masatsugu Izu ,  Herbert C. Ovshinsky ,  Avtar Singh

IPC分类号： H01L31/04 ,  H01L31/0392 ,  H01L31/042 ,  H01L31/076 ,  H01L25/02 ,  H01L31/18

CPC分类号： H01L31/076 ,  H01L31/0201 ,  H01L31/03921 ,  H01L31/0445 ,  H01L31/0504 ,  Y02E10/548

摘要： An improved large area photovoltaic device includes a plurality of electrically interconnected smaller area cells. The smaller area cells each have a laterally disposed bus bar and are disposed in overlapping relationships so that the bus bar of a given cell is beneath the substrate of the adjacent overlapping cell. In this manner the surface of the resulting large area device available for photovoltaic power generation is maximized. Also disclosed herein are methods for the manufacture of the improved device.

摘要翻译： 改进的大面积光伏器件包括多个电互连较小区域单元。 较小的区域单元每个都具有横向布置的汇流条并且以重叠关系设置，使得给定单元的母线在相邻重叠单元的基板下方。 以这种方式，可以用于光伏发电的所得大面积装置的表面最大化。 本文还公开了用于制造改进的装置的方法。

公开(公告)号：US4545136A

公开(公告)日：1985-10-08

申请号：US548396

申请日：1983-11-03

申请人： Masatsugu Izu ,  David A. Gattuso

发明人： Masatsugu Izu ,  David A. Gattuso

IPC分类号： C23C14/56 ,  C23C16/54 ,  F16J15/16 ,  F26B13/02

CPC分类号： F16J15/168 ,  C23C14/562 ,  C23C16/545

摘要： A valve for isolating the interior of a glow discharge chamber from the atmosphere and other reactants. The valve includes a body mounted in an aperture of the chamber. A slit-like opening is provided therein to allow the interior of the chamber to communicate with interrelated elements of a deposition system. A source is provided for introducing inert gas into the opening under pressure somewhat greater than that of reaction gases and plasma within the chamber to create an effective, non-reactive gas curtain.

摘要翻译： 用于将辉光放电室的内部与大气隔离的阀和其它反应物。 阀包括安装在腔室的孔中的主体。 在其中设置有狭缝状的开口，以允许室的内部与沉积系统的相关元件连通。 提供源，用于将惰性气体在压力稍大于反应气体和室内等离子体的压力下引入开口，以产生有效的非反应性气幕。

公开(公告)号：US4544798A

公开(公告)日：1985-10-01

申请号：US636172

申请日：1984-07-31

申请人： Vincent D. Cannella

发明人： Vincent D. Cannella

IPC分类号： H01L31/048 ,  H01L31/052 ,  H01L31/075 ,  H01L31/20 ,  H01L31/04

CPC分类号： H01L31/052 ,  H01L31/048 ,  H01L31/075 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic panel for converting light into electrical energy has enhanced energy conversion efficiency stability. The panel includes a photovoltaic device having an active region formed from a semiconductor material which exhibits an energy conversion efficiency stability directly related to the operating temperature of the device. The panel also includes means for maintaining the operating temperature of the device upon exposure to light at an elevated temperature above the ambient temperature external to the device. The active region semiconductor material is preferably an amorphous semiconductor alloy such as, for example, an amorphous silicon alloy. The operating temperature elevating means can include a thermal insulating material such as glass wool, styrofoam, or cork applied to the back side of the device to minimize heat conduction from the device. The panel can also include an enclosure for enclosing the device having a transparent cover overlying the device to seal the enclosure and provide a still air space adjacent the device. The panel is thereby arranged to maintain the operating temperature of the device at a temperature which is from about twenty degrees Centigrade to about one hundred and fifty degrees Centigrade above the ambient temperature external to the device.

摘要翻译： 用于将光转换成电能的光伏面板提高了能量转换效率的稳定性。 该面板包括具有由半导体材料形成的有源区的光电器件，其表现出与器件的工作温度直接相关的能量转换效率稳定性。 面板还包括用于在高于设备外部的环境温度的高温下暴露于光时保持设备的工作温度的装置。 有源区半导体材料优选为非晶半导体合金，例如非晶硅合金。 操作温度升高装置可以包括诸如玻璃棉，泡沫聚苯乙烯或软木的绝热材料，其施加到装置的背面，以最小化来自装置的热传导。 面板还可以包括用于封闭装置的外壳，该装置具有覆盖该装置的透明盖，以密封该外壳并提供与该装置相邻的静止空间。 因此，面板被布置成将装置的操作温度保持在高于装置外部的环境温度的约二十摄氏度至约百分之一百五十摄氏度的温度。

公开(公告)号：US4600801A

公开(公告)日：1986-07-15

申请号：US667659

申请日：1984-11-02

申请人： Subhendu Guha ,  James Kulman

发明人： Subhendu Guha ,  James Kulman

IPC分类号： C23C16/22 ,  H01L21/205 ,  H01L29/04 ,  H01L31/06 ,  H01L31/075 ,  H01L31/18

CPC分类号： H01L31/075 ,  C23C16/22 ,  H01L21/02425 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/04 ,  H01L31/06 ,  Y02E10/548 ,  Y10S420/903

摘要： A fluorinated, p-doped microcrystalline semiconductor alloy material; electronic devices incorporating said p-doped material; and the method for fabricating said p-doped material.

摘要翻译： 氟化p掺杂微晶半导体合金材料; 掺入所述p掺杂材料的电子器件; 以及制造所述p掺杂材料的方法。

公开(公告)号：US4521447A

公开(公告)日：1985-06-04

申请号：US565033

申请日：1983-12-23

申请人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  Marc A. Kastner

发明人： Stanford R. Ovshinsky ,  Stephen J. Hudgens ,  Marc A. Kastner

IPC分类号： C23C16/02 ,  C23C16/511 ,  H01L31/06 ,  H01L31/18 ,  B05D3/02 ,  B05D3/06 ,  B05D5/12

CPC分类号： C23C16/02 ,  C23C16/511 ,  H01L31/06 ,  H01L31/18 ,  Y02E10/50

摘要： An apparatus and process utilizes microwave energy for depositing amorphous alloy materials in layered form onto a receiving surface. The process results in materials having unique properties suitable for many applications including photovoltaic applications. The process includes the steps of providing at least one source of microwave energy, providing at least two reaction gases, each gas containing at least one alloying element to be deposited onto the receiving surface, and selectively exciting the reaction gases with microwave energy to create excited species containing the alloying elements to be deposited for depositing the alloys in alternating layers onto the receiving surface. For depositing alternating layers of silicon and germanium alloys, the reactions gases can include silane (SiH.sub.4) or silicon tetrafluoride (SiF.sub.4), and germane (GeH.sub.4) or germanium tetrafluoride (GeF.sub.4). In accordance with one disclosed embodiment, the reaction gases are excited separately with the excited species therefrom being sequentially introduced to the receiving surface for layered deposition. In accordance with another disclosed embodiment, the reaction gases are premixed to form a mixture and thereafter, the reaction gases are selectively excited in a plasma which is moved back and forth in the direction of flow of the reaction gas mixture to form selective excited species. Layered deposition results as a consequence of both the selective depletion of one alloying element bearing species from the gas mixture flow and from the motion of the plasma excitation zone relative to the receiving surface.

摘要翻译： 一种装置和方法利用微波能量将分层形式的非晶合金材料沉积到接收表面上。 该过程导致具有适合于许多应用的独特性质的材料，包括光伏应用。 该方法包括以下步骤：提供至少一个微波能量源，提供至少两个反应气体，每个气体含有至少一个要沉积在接收表面上的合金元素，并用微波能量选择性地激发反应气体以产生激发 含有要沉积的合金元素的物质以交替的层沉积到接收表面上。 为了沉积硅和锗合金的交替层，反应气体可以包括硅烷（SiH 4）或四氟化硅（SiF 4）和锗烷（GeH 4）或四氟化锗（GeF 4）。 根据一个公开的实施例，反应气体被分开地激发，其中被激发的物质被顺序地引入接收表面用于层状沉积。 根据另一公开的实施方案，将反应气体预混合以形成混合物，此后，反应气体在等离子体中被选择性地激发，该等离子体在反应气体混合物的流动方向上来回移动以形成选择性激发的物质。 作为来自气体混合物流的一种合金元素的选择性耗尽和等离子体激发区相对于接收表面的运动的选择性耗尽的结果，分层沉积结果。

公开(公告)号：US4510675A

公开(公告)日：1985-04-16

申请号：US610198

申请日：1984-05-14

申请人： Masatsugu Izu ,  Vincent D. Cannella

发明人： Masatsugu Izu ,  Vincent D. Cannella

IPC分类号： H01L31/075 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/18 ,  Y02E10/548 ,  Y10S136/29

摘要： Systems and methods for detecting and eliminating latent and existing short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one semiconductor region are disclosed. The latent paths are first converted to existing short circuit current paths by applying a bias voltage to the devices. The short circuit current paths which are eliminated extend through the at least one semiconductor region from the substrate to the layer of conductive light transmissive material. The resistivity of the short circuit current paths is increased substantially at the interface between the conductive light transmissive material and the semiconductor region by isolating electrically the conductive light transmissive material from the short circuit current path.The isolation can be provided by removing the transparent conductive material from electrical contact or connection with the short circuit current path. The isolation also can be provided by depositing a body of insulating material onto the semiconductor region over an area including a short circuit current path prior to the deposition of the conductive light transmissive material. Further, the short circuit current path can be detected and located by applying a voltage to discrete areas of the device through a conductive solution which path then can be eliminated as described above.

摘要翻译： 公开了用于检测和消除包括覆盖在衬底上的至少一个半导体区域和覆盖至少一个半导体区域的导电透光材料层的类型的光伏器件的潜在和现有短路电流路径的系统和方法。 潜在的路径首先通过向器件施加偏置电压而转换成现有的短路电流路径。 消除的短路电流路径延伸穿过至少一个半导体区域，从衬底到导电透光材料层。 通过将导电透光材料与短路电流路径电隔离，短路电流路径的电阻率基本上在导电透光材料和半导体区域之间的界面处增加。 可以通过从短路电流路径的电接触或连接中去除透明导电材料来提供隔离。 也可以通过在沉积导电透光材料之前在包括短路电流路径的区域上的半导体区域上沉积绝缘材料体来提供隔离。 此外，如上所述，可以通过将导电溶液施加电压到器件的离散区域，然后可以消除该路径，来检测和定位短路电流路径。

公开(公告)号：US4510674A

公开(公告)日：1985-04-16

申请号：US592610

申请日：1984-03-23

申请人： Masatsugu Izu ,  Vincent D. Cannella

发明人： Masatsugu Izu ,  Vincent D. Cannella

IPC分类号： G01R31/02 ,  H01L31/0224 ,  H01L31/18 ,  H01L21/306

CPC分类号： G01R31/025 ,  H01L31/022408 ,  H01L31/18 ,  Y10S136/29

摘要： Systems and methods for detecting and eliminating short circuit current paths through photovoltaic devices of the type including at least one semiconductor region overlying a substrate and a layer of conductive light transmissive material overlying the at least one semiconductor region are disclosed. The short circuit current paths which are eliminated extend through the at least one semiconductor region from the substrate to the layer of conductive light transmissive material. The resistivity of the short circuit current path is increased substantially at the interface between the conductive light transmissive material and the semiconductor region by isolating electrically the conductive light transmissive material from the short circuit current path.The isolation can be provided by removing the transparent conductive material from electrical contact or connection with the short circuit current path. The isolation also can be provided by depositing a body of insulating material onto the semiconductor region over an area including a short circuit current path prior to the deposition of the conductive light transmissive material. Further, the short circuit current path can be detected and located by applying a voltage to discrete areas of the device through a conductive solution which path then can be eliminated as described above.The system can form part of a continuous or batch production system for making photovoltaic devices or can be performed at a location remote from the continuous or batch production system. A plurality of side-by-side sources of electrolyte, each making discrete surface area contact with the conductive light transmissive material or a single elongated electrolyte source extending across the entire width of the device can be provided so that the device can be continuously moved through the system for the continuous detection and elimination of short circuit current paths across the entire width and length of the device.

公开(公告)号：US4601260A

公开(公告)日：1986-07-22

申请号：US718571

申请日：1985-04-01

申请人： Herbert Ovshinsky

发明人： Herbert Ovshinsky

IPC分类号： H01L31/04 ,  C23C16/54 ,  H01L21/205 ,  C23C16/00

CPC分类号： C23C16/545

摘要： A vertical processor for the continuous deposition of semiconductor alloy material by glow discharge techniques. The vertical processor includes a plurality of operatively interconnected deposition chambers, at least one chamber of which includes a generally vertical cathode plate about each of the opposed faces of which a plasma region is developed and a substrate continuously passes for the deposition of semiconductor alloy material thereonto. Through the utilization of the vertical deposition scenario, the length of the processor may be substantially foreshortened, power consumption may be substantially decreased and feedstock gases may be more efficiently utilized.

公开(公告)号：US4542711A

公开(公告)日：1985-09-24

申请号：US244386

申请日：1981-03-16

申请人： Masatsugu Izu ,  Herbert C. Ovshinsky

发明人： Masatsugu Izu ,  Herbert C. Ovshinsky

IPC分类号： C23C16/509 ,  C23C16/54 ,  C23C11/00

CPC分类号： C23C16/545 ,  C23C16/509

摘要： A continuous system for depositing at least one layer of amorphous semiconductor material upon a substrate. Feed and takeup sections provide reel-to-reel advancement of a thin film substrate through the system. At least one chamber is located between the feed and takeup sections. A plasma is generated therein by glow discharge decomposition of an appropriate mixture of reaction gases. Apparatus associated with the chamber allows the close regulation of the plasma/substrate surface equilibrium to assure the deposition of a uniform layer of amorphous material. At least one servocontrolled reel drive regulates the tension of the web-like substrate as it advances to avoid cracking and to assure its proper registration with a mask comprising a plurality of strips. A curtain of inert gas provides isolation between the interior of each chamber and the environment.

摘要翻译： 用于在衬底上沉积至少一层非晶半导体材料的连续系统。 进料和卷取部分通过系统提供薄膜基材的卷轴到卷轴的前进。 至少一个腔室位于进料和收紧部分之间。 通过合适的反应气体混合物的辉光放电分解产生等离子体。 与室相关联的装置允许等离子体/衬底表面平衡的紧密调节，以确保均匀的非晶材料层的沉积。 至少一个伺服控制的卷轴驱动器在其前进时调节幅材状基板的张力，以避免开裂并确保其与包括多个条带的掩模的适当对准。 惰性气体幕帘在每个室的内部和环境之间提供隔离。

公开(公告)号：US4537795A

公开(公告)日：1985-08-27

申请号：US637358

申请日：1984-08-03

申请人： Prem Nath ,  Kevin R. Hoffman ,  Timothy D. Laarman

发明人： Prem Nath ,  Kevin R. Hoffman ,  Timothy D. Laarman

IPC分类号： C23C16/54 ,  F16J15/40 ,  H01J37/32 ,  H01L21/365

CPC分类号： H01J37/3244 ,  C23C16/545 ,  F16J15/40

摘要： A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases are swept through the gas gate to minimize back diffusion of process gases from the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.

摘要翻译： 一种用于引入吹扫气体通过适于与辉光放电沉积设备一起使用的挡板系统的方法，其中连续的非晶半导体层沉积在衬底上。 沉积设备包括至少一对相邻的专用沉积室，每个室中引入不同的工艺气体，这些室通过气门可操作地连接。 惰性气体被扫过气门，以最小化来自腔室的工艺气体的反向扩散。 挡板系统适用于防止所述吹扫气体在行进通过气体闸道通道时进入湍流。 此外，引入每单位时间吹扫气体的足够体积以确保一些吹扫气体流入第一室的阴极区域，从而基本上防止工艺气体和等离子体从阴极区域逸出并形成硅烷粉末。