公开(公告)号：US20170001870A1

公开(公告)日：2017-01-05

申请号：US15101154

申请日：2014-12-11

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Keiko YOSHITAKE ,  Ai UMEDA ,  Ichitaro KIKUNAGA

IPC: C01B33/141 ,  C01B33/18

CPC classification number: C01B33/1417 ,  C01B33/145 ,  C01B33/18 ,  C01P2004/04 ,  C01P2004/54 ,  C01P2004/64 ,  C01P2006/80

Abstract: The invention provides silica particles, formed from an alkoxysilane serving as a raw material, characterized in that the silica particles satisfy the following requirements (a) to (c): (a) the silica particles have an alkali metal element content of 5 ppm or less, with respect to the silica solid content; (b) the silica particles exhibit a moisture absorption of 0.25 mg/m2 or less at 50% relative humidity, and a refractive index, as determined through the liquid immersion method, of 1.450 to 1.460; and (c) the silica particles have a mean primary particle size, derived from a specific surface area as determined through the nitrogen adsorption method, of 10 to 100 nm.

Abstract translation: 本发明提供由用作原料的烷氧基硅烷形成的二氧化硅颗粒，其特征在于二氧化硅颗粒满足以下要求（a）至（c）：（a）二氧化硅颗粒的碱金属元素含量为5ppm或 少于二氧化硅固体含量; （b）二氧化硅粒子在50％相对湿度下的吸湿性为0.25mg / m 2以下，通过液浸法测定的折射率为1.450〜1.460; 和（c）二氧化硅颗粒具有通过氮吸附法测定的比表面积的平均一次粒径为10〜100nm。

公开(公告)号：US11720024B2

公开(公告)日：2023-08-08

申请号：US17880761

申请日：2022-08-04

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Hikaru Tokunaga ,  Daigo Saito ,  Keisuke Hashimoto ,  Rikimaru Sakamoto

IPC: G03F7/11 ,  G03F7/40 ,  G03F7/20 ,  C08G12/26 ,  C08G16/02 ,  C09D161/26 ,  H01L21/027

CPC classification number: G03F7/11 ,  C08G12/26 ,  C08G16/0268 ,  C09D161/26 ,  G03F7/2002 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/0274

Abstract: A resist underlayer film for lithography does not cause intermixing with a resist layer, has high dry etching resistance and high heat resistance, and generates a low amount of sublimate. A resist underlayer film-forming composition containing a polymer having a unit structure of the following formula (1):




wherein A is a divalent group having at least two amino groups, the group is derived from a compound having a condensed ring structure and an aromatic group for substituting a hydrogen atom on the condensed ring, and B1 and B2 are each independently a hydrogen atom, an alkyl group, a benzene ring group, a condensed ring group, or a combination thereof, or B1 and B2 optionally form a ring with a carbon atom bonded to B1 and B2.

公开(公告)号：US11675269B2

公开(公告)日：2023-06-13

申请号：US13880470

申请日：2011-09-15

Applicant: Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

Inventor： Rikimaru Sakamoto ,  Bangching Ho ,  Takafumi Endo

IPC: G03F7/11 ,  C08L61/06 ,  C08G8/08 ,  C09D161/06 ,  G03F7/09 ,  C08G8/24 ,  C09D5/00 ,  C08F12/24 ,  C08F212/14

CPC classification number: G03F7/11 ,  C08G8/08 ,  C08G8/24 ,  C08L61/06 ,  C09D5/00 ,  C09D161/06 ,  G03F7/091 ,  C08F12/24 ,  C08F212/24 ,  C08F212/32 ,  C08F212/24 ,  C08F220/06

Abstract: There is provided a composition for forming an EUV resist overlayer film that is used in an EUV lithography process, that does not intermix with the EUV resist, that blocks unfavorable exposure light for EUV exposure, for example, UV light and DUV light and selectively transmits EUV light alone, and that can be developed with a developer after exposure. A composition for forming an EUV resist overlayer film used in an EUV lithography process including a resin containing a naphthalene ring in a main chain or in a side chain and a solvent, in which the resin may include a hydroxy group, a carboxy group, a sulfo group, or a monovalent organic group having at least one of these groups as a hydrophilic group.

公开(公告)号：US11592747B2

公开(公告)日：2023-02-28

申请号：US14650929

申请日：2013-12-12

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Yasunobu Someya ,  Ryo Karasawa ,  Keisuke Hashimoto ,  Tetsuya Shinjo ,  Rikimaru Sakamoto

IPC: G03F7/09 ,  G03F7/11 ,  C09D161/12 ,  H01L21/02 ,  H01L21/027 ,  H01L21/311 ,  H01L21/033

Abstract: There is provided resist underlayer film for lithography process with high dry etching resistance, wiggling resistance, and heat resistance. Resist underlayer film-forming composition for lithography including polymer having unit structure of Formula (1): wherein A is hydroxy group-substituted C6-40 arylene group derived from polyhydroxy aromatic compound; B is C6-40 arylene group or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof; X+ is H+, NH4+, primary ammonium ion, secondary ammonium ion, tertiary ammonium ion, or quaternary ammonium ion, T is hydrogen atom, C1-10 alkyl group or C6-40 aryl group that may be substituted with halogen group, hydroxy group, nitro group, amino group, carboxylate ester group, nitrile group, or combination thereof as substituent, or C4-30 heterocyclic group containing nitrogen atom, oxygen atom, sulfur atom, or combination thereof, B and T may form C4-40 ring together with carbon atom to which they are bonded.

公开(公告)号：US11488824B2

公开(公告)日：2022-11-01

申请号：US14374695

申请日：2013-01-23

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Satoshi Takeda ,  Makoto Nakajima ,  Yuta Kanno ,  Hiroyuki Wakayama

IPC: G03F7/075 ,  G03F7/11 ,  H01L21/027 ,  C09D183/04 ,  H01L21/308 ,  C08G77/00

Abstract: A resist underlayer film for a resist pattern formation by developing a resist with organic solvent after exposure of resist. Method for manufacturing a semiconductor includes: applying onto a substrate a resist underlayer film forming composition including hydrolyzable silanes, hydrolysis products of hydrolyzable silanes, hydrolysis-condensation products of hydrolyzable silanes, or a combination thereof. Hydrolyzable silanes being silane of Formulas (1), (2) and (3). Silane of Formulas (1), (2) and (3) in total silanes in a ratio % by mole of 45-90:6-20:0-35; baking the applied resist underlayer film forming composition to form a resist underlayer film; applying a composition to form a resist film; exposing the resist film to light; developing the resist film after exposure, with organic solvent to obtain patterned resist film; and etching the resist underlayer film by using the patterned resist film and processing the substrate using the patterned resist underlayer film; wherein Si(R1)4  Formula (1) R2[Si(R3)3]  Formula (2) R4[Si(R5)3]b  Formula (3).

公开(公告)号：US20220306985A1

公开(公告)日：2022-09-29

申请号：US17750908

申请日：2022-05-23

Applicant: Nissan Chemical Industries, Ltd. ,  Kyoto University

Inventor： Taito NISHINO ,  Tatsuro KANAKI ,  Ayako OTANI ,  Koichiro SARUHASHI ,  Misayo Tomura ,  Takehisa IWAMA ,  Masato HORIKAWA ,  Norio NAKATSUJI ,  Tomomi OTSUJI

IPC: C12N5/00 ,  G01N33/50 ,  C12N5/071 ,  C12N5/09

Abstract: The present invention provides a culture method of cells and/or tissues including culturing cells and/or tissues in a suspended state by using a medium composition wherein indeterminate structures are formed in a liquid medium, the structures are uniformly dispersed in the solution and substantially retain the cells and/or tissues without substantially increasing the viscosity of the solution, thus affording an effect of preventing sedimentation thereof, and the like

公开(公告)号：US11371013B2

公开(公告)日：2022-06-28

申请号：US16801785

申请日：2020-02-26

Applicant: Nissan Chemical Industries, Ltd. ,  Kyoto University

Inventor： Taito Nishino ,  Tatsuro Kanaki ,  Ayako Otani ,  Koichiro Saruhashi ,  Misayo Tomura ,  Takehisa Iwama ,  Masato Horikawa ,  Norio Nakatsuji ,  Tomomi Otsuji

IPC: C12N5/00 ,  G01N33/50 ,  C12N5/071 ,  C12N5/09

Abstract: The present invention provides a culture method of cells and/or tissues including culturing cells and/or tissues in a suspended state by using a medium composition wherein indeterminate structures are formed in a liquid medium, the structures are uniformly dispersed in the solution and substantially retain the cells and/or tissues without substantially increasing the viscosity of the solution, thus affording an effect of preventing sedimentation thereof, and the like.

公开(公告)号：US11112654B2

公开(公告)日：2021-09-07

申请号：US15764459

申请日：2016-09-28

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Atsuhiko Mandai ,  Naoki Sakumoto

IPC: G02F1/1337 ,  C08G73/10 ,  C08F20/30 ,  C09D179/08 ,  C08F283/04 ,  C08G73/12 ,  C09K19/56 ,  G02F1/1343

Abstract: A liquid crystal display device, which includes a first substrate and a second substrate disposed to face each other with a liquid crystal sandwiched therebetween. The first substrate is an electrode-provided substrate having a first electrode and a plurality of second electrodes overlaid on the first electrode via an insulating film, formed on a pixel region on a surface on the liquid crystal side, where one of the first electrode and the second electrodes is a pixel electrode and the other is a counter electrode, having a first liquid crystal alignment film formed on the surface on the liquid crystal side of the first substrate covered with the second electrodes. The second substrate is a substrate having a second liquid crystal alignment film formed on a surface on the liquid crystal side, the second liquid crystal alignment film containing a photosensitive side chain type polymer which develops liquid crystallinity.

公开(公告)号：US11061297B2

公开(公告)日：2021-07-13

申请号：US16084921

申请日：2017-03-16

Applicant: KYUSHU UNIVERSITY ,  NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Shiyoshi Yokoyama ,  Hiroki Miura ,  Daisuke Maeda ,  Kei Yasui ,  Tsubasa Kashino ,  Masaaki Ozawa

IPC: G02F1/361 ,  C08F8/30 ,  C08F8/34 ,  C08F220/36 ,  C08F220/18 ,  C09D5/24 ,  C09D133/10 ,  G02F1/365

Abstract: A nonlinear optically active copolymer having satisfactory orientation characteristics and able to allow for reduction in heat-induced orientation relaxation of a nonlinear optical material, and a nonlinear optical material obtained using the copolymer. The copolymer including at least a repeating unit A having adamantyl group and a repeating unit B having a nonlinear optically active moiety in one molecule, and an organic nonlinear optical material including the copolymer as a component.

公开(公告)号：US10899720B2

公开(公告)日：2021-01-26

申请号：US16169469

申请日：2018-10-24

Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.

Inventor： Takuma Nagahama ,  Takeshi Suwa

IPC: C07D251/70 ,  C08K5/00 ,  C08L67/00 ,  C08K5/3492

Abstract: A polyester resin composition containing 100 parts by mass of a polyester resin and 0.01 to 10 parts by mass of a 2-amino-1,3,5-triazine derivative of Formula [1]: a polyester resin molded body obtained by the composition, and a crystal nucleating agent including the triazine derivative. A polyester resin composition containing a crystal nucleating agent that makes it possible to produce, with high productivity, a polyester resin molded product that promotes polyester resin crystallization and maintains high transparency after crystallization and is applicable for a wide variety of uses can be provided.