Tuning method, manufacturing method, computer-readable storage medium and tuning system

    公开(公告)号:US11595764B2

    公开(公告)日:2023-02-28

    申请号:US17287385

    申请日:2019-09-18

    发明人: Peter McCutcheon

    IPC分类号: G10K11/178 H04R25/00 H04R1/10

    摘要: A method for tuning filter parameters of a noise cancellation enabled audio system with an ear-mountable playback device comprising a speaker and a feedback noise microphone located in proximity to the speaker comprises provision of acoustic transfer functions between the speaker and the feedback noise microphone, between the speaker and an eardrum, between an ambient sound source and the eardrum and between the ambient sound source and the feedback noise microphone. The parameters of a feedback filter function, which is designed to process a feedback noise signal, are tuned. A noise cancellation performance of the audio system at the eardrum is determined based on each of the acoustic transfer functions and on the feedback filter function.

    METHOD FOR TUNING A NOISE CANCELLATION ENABLED AUDIO SYSTEM AND NOISE CANCELLATION ENABLED AUDIO SYSTEM

    公开(公告)号:US20220014850A1

    公开(公告)日:2022-01-13

    申请号:US17297330

    申请日:2019-10-25

    发明人: Robert Alcock

    摘要: In a method for tuning at least one parameter of a noise cancellation enabled audio system with an ear mountable playback device comprising a speaker and a feedforward microphone the playback device is placed onto a measurement fixture, the speaker facing a test microphone located within an ear canal representation. The parameter is varied between a plurality of settings while a test sound is played. A measurement signal from the test microphone is received and stored in the audio system at least while the parameter is varied. A power minimum in the stored measurement signal and a tune parameter associated with the power minimum are determined in the audio system from the plurality of settings of the varied parameter.

    TUNING METHOD, MANUFACTURING METHOD, COMPUTER-READABLE STORAGE MEDIUM AND TUNING SYSTEM

    公开(公告)号:US20210400398A1

    公开(公告)日:2021-12-23

    申请号:US17287385

    申请日:2019-09-18

    发明人: Peter McCutcheon

    IPC分类号: H04R25/00 G10K11/178 H04R1/10

    摘要: A method for tuning filter parameters of a noise cancellation enabled audio system with an ear-mountable playback device comprising a speaker and a feedback noise microphone located in proximity to the speaker comprises provision of acoustic transfer functions between the speaker and the feedback noise microphone, between the speaker and an eardrum, between an ambient sound source and the eardrum and between the ambient sound source and the feedback noise microphone. The parameters of a feedback filter function, which is designed to process a feedback noise signal, are tuned. A noise cancellation performance of the audio system at the eardrum is determined based on each of the acoustic transfer functions and on the feedback filter function.

    CIRCUIT FOR MEASURING A RESISTANCE

    公开(公告)号:US20210011066A1

    公开(公告)日:2021-01-14

    申请号:US16977313

    申请日:2019-03-12

    IPC分类号: G01R27/14 H03M3/00 H03K17/687

    摘要: A circuit for measuring an unknown resistance of a resistive element comprises a sensor circuit to generate a differential voltage dependent on the resistance of the resistive element and a reference circuit to generate a differential reference voltage and a sigma-delta converter comprising a first stage, wherein a first capacitor is selectively coupled to one of the output terminals of the sensor circuit and a second capacitor is coupled to one of the output terminals of the reference circuit. The circuit generates logarithmically compressed values.

    Infra-red device
    5.
    发明授权

    公开(公告)号:US10883804B2

    公开(公告)日:2021-01-05

    申请号:US15852225

    申请日:2017-12-22

    摘要: We disclose herein an infra-red (IR) device comprising a substrate comprising an etched cavity portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises a dielectric membrane which is adjacent, or directly above, or below the etched cavity portion of the substrate. The device further comprises a reflective layer on or in or above or below the dielectric membrane to enhance emission or absorption of infrared light at one or more wavelengths.

    IR detector arrays
    7.
    发明授权

    公开(公告)号:US10436646B2

    公开(公告)日:2019-10-08

    申请号:US15908159

    申请日:2018-02-28

    IPC分类号: G01J5/12

    摘要: We disclose herein an infra-red (IR) detector comprising a substrate comprising at least one etched portion and a substrate portion; a dielectric layer disposed on the substrate. The dielectric layer comprises at least one dielectric membrane, which is adjacent to the etched portion of the substrate. The detector further comprises a first sensing area and a second sensing area each located in a dielectric membrane and a plurality of thermocouples. At least one thermocouple comprises first and second thermal junctions. The first thermal junction is located in or on the first sensing area and the second thermal junction is located in or on the second sensing area.

    Electronic device
    9.
    发明授权

    公开(公告)号:US10928372B2

    公开(公告)日:2021-02-23

    申请号:US15010167

    申请日:2016-01-29

    摘要: We disclose herein an electronic device comprising: a state machine for receiving an output signal from a sensor; a comparator operatively coupled with the state machine; and a first processor operatively coupled with the comparator. The state machine is configured to receive the output signal from the at least one sensor to obtain sensor measurement data and configured to pass the obtained sensor measurement data to the comparator. The comparator is configured to process the obtained sensor measurement data into first processed sensor data, and configured to compare the first processed sensor data with a first predetermined threshold limit. The comparator is configured to inform the first processor about the obtained sensor measurement data if the first processed sensor data exceed the first predetermined threshold limit.

    CMOS-based semiconductor device on micro-hotplate and method of fabrication

    公开(公告)号:US10527571B2

    公开(公告)日:2020-01-07

    申请号:US15123630

    申请日:2015-02-27

    摘要: It is disclosed herein a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device is made using partly CMOS or CMOS based processing steps, and it includes a semiconductor substrate, a dielectric region over the semiconductor substrate, a heater within the dielectric region and a patterned layer of noble metal above the dielectric region. The method includes the deposition of a photoresist material over the dielectric region, and patterning the photo-resist material to form a patterned region over the dielectric region. The steps of depositing the photo-resist material and patterning the photo-resist material may be performed in sequence using similar photolithography and etching steps to those used in a CMOS process. The resulting semiconductor device is then subjected to further processing steps which ensure that a dielectric membrane and a metal structure within the membrane are formed in the patterned region over the dielectric region.