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公开(公告)号：US10551246B2
公开(公告)日：2020-02-04
申请号：US15009300
申请日：2016-01-28
IPC分类号： G01J3/42 , G01J3/28 , H01L23/34 , H01L27/144 , H01L27/146 , H01L27/16 , H01L31/02 , H01L31/0203 , H01L31/0216 , H01L31/0232 , H01L31/028 , H01L31/16 , H01L31/18 , H01L37/02
摘要： We disclose an array of Infra-Red (IR) detectors comprising at least one dielectric membrane formed on a semiconductor substrate comprising an etched portion; at least two IR detectors, and at least one patterned layer formed within or on one or both sides of the said dielectric membrane for controlling the IR absorption of at least one of the IR detectors. The patterned layer comprises laterally spaced structures.
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公开(公告)号：US10128302B2
公开(公告)日：2018-11-13
申请号：US15009410
申请日：2016-01-28
IPC分类号： H01L27/16 , H01L27/146 , H01L31/024 , H01L31/028 , H01L31/09 , H01L31/103 , H01L31/112 , H01L31/12 , H01L37/02 , G01J5/02 , G01J5/12 , G01J5/20
摘要： We disclose herein a thermal IR detector array device comprising a dielectric membrane, supported by a substrate, the membrane having an array of IR detectors, where the array size is at least 3 by 3 or larger, and there are tracks embedded within the membrane layers to separate each element of the array, the tracks also acting as heatsinks and/or cold junction regions.
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公开(公告)号：US10527571B2
公开(公告)日：2020-01-07
申请号：US15123630
申请日：2015-02-27
发明人： Florin Udrea , Syed Zeeshan Ali , Julian Gardner
摘要： It is disclosed herein a semiconductor device and a method of manufacturing the semiconductor device. The semiconductor device is made using partly CMOS or CMOS based processing steps, and it includes a semiconductor substrate, a dielectric region over the semiconductor substrate, a heater within the dielectric region and a patterned layer of noble metal above the dielectric region. The method includes the deposition of a photoresist material over the dielectric region, and patterning the photo-resist material to form a patterned region over the dielectric region. The steps of depositing the photo-resist material and patterning the photo-resist material may be performed in sequence using similar photolithography and etching steps to those used in a CMOS process. The resulting semiconductor device is then subjected to further processing steps which ensure that a dielectric membrane and a metal structure within the membrane are formed in the patterned region over the dielectric region.
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公开(公告)号：US20170221959A1
公开(公告)日：2017-08-03
申请号：US15009410
申请日：2016-01-28
IPC分类号： H01L27/146 , H01L27/16 , H01L31/024 , H01L31/112 , H01L31/028 , H01L31/09 , H01L31/103 , H01L37/02 , H01L31/12
CPC分类号： H01L27/14669 , G01J5/024 , G01J5/12 , G01J5/20 , G01J2005/123 , G01J2005/202 , H01L27/14603 , H01L27/14609 , H01L27/14612 , H01L27/14618 , H01L27/1462 , H01L27/14625 , H01L27/14629 , H01L27/1463 , H01L27/14649 , H01L27/14683 , H01L27/16 , H01L31/024 , H01L31/028 , H01L31/09 , H01L31/103 , H01L31/112 , H01L31/12 , H01L37/025
摘要： We disclose herein a thermal IR detector array device comprising a dielectric membrane, supported by a substrate, the membrane having an array of IR detectors, where the array size is at least 3 by 3 or larger, and there are tracks embedded within the membrane layers to separate each element of the array, the tracks also acting as heatsinks and/or cold junction regions.
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公开(公告)号：US20170219434A1
公开(公告)日：2017-08-03
申请号：US15009300
申请日：2016-01-28
IPC分类号： G01J3/42 , H01L27/16 , H01L37/02 , H01L31/028 , H01L23/34 , G01J3/28 , H01L27/144 , H01L31/02 , H01L31/0203 , H01L31/0216 , H01L31/0232 , H01L31/18 , H01L27/146 , H01L31/16
CPC分类号： G01J3/42 , G01J3/2803 , G01J5/024 , G01J5/0853 , G01J5/12 , G01J5/20 , G01J2005/123 , G01J2005/202 , H01L23/34 , H01L27/1446 , H01L27/14607 , H01L27/14609 , H01L27/14618 , H01L27/1462 , H01L27/14625 , H01L27/14629 , H01L27/14634 , H01L27/14636 , H01L27/14649 , H01L27/14669 , H01L27/14683 , H01L27/16 , H01L31/02002 , H01L31/0203 , H01L31/0216 , H01L31/02327 , H01L31/028 , H01L31/16 , H01L31/1804 , H01L37/025
摘要： We disclose an array of Infra-Red (IR) detectors comprising at least one dielectric membrane formed on a semiconductor substrate comprising an etched portion; at least two IR detectors, and at least one patterned layer formed within or on one or both sides of the said dielectric membrane for controlling the IR absorption of at least one of the IR detectors. The patterned layer comprises laterally spaced structures.
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