公开(公告)号：US20190280011A1

公开(公告)日：2019-09-12

申请号：US16422648

申请日：2019-05-24

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Simon Edward Willard ,  Alain Duvallet ,  Merlin Green ,  Sivakumar Kumarasamy

IPC分类号： H01L27/12 ,  H01L23/535 ,  H01L29/786 ,  H01L21/84 ,  H01L23/538 ,  H01L21/66 ,  H01L21/74

摘要： Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage devices and circuits. In one case, an N-type implant is used to provide a high potential differential with respect to a substrate potential.

公开(公告)号：US20180211972A1

公开(公告)日：2018-07-26

申请号：US15799983

申请日：2017-10-31

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Simon Edward Willard ,  Alain Duvallet ,  Merlin Green ,  Sivakumar Kumarasamy

IPC分类号： H01L27/12 ,  H01L21/74 ,  H01L23/538 ,  H01L21/84 ,  H01L21/66

CPC分类号： H01L27/1203 ,  H01L21/743 ,  H01L21/84 ,  H01L22/12 ,  H01L23/5386 ,  H01L27/1218 ,  H01L29/78603

摘要： Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage devices and circuits. In one case, an N-type implant is used to provide a high potential differential with respect to a substrate potential.

公开(公告)号：US20180175841A1

公开(公告)日：2018-06-21

申请号：US15842753

申请日：2017-12-14

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Merlin Green

IPC分类号： H03K5/14 ,  H03K17/689 ,  H03K19/0185 ,  H02M1/38 ,  H03K5/1534 ,  H02M7/538 ,  H03K5/00

CPC分类号： H03K5/14 ,  H02M1/38 ,  H02M7/538 ,  H03K5/1534 ,  H03K17/689 ,  H03K19/018514 ,  H03K2005/00019

摘要： Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.

公开(公告)号：US10770480B2

公开(公告)日：2020-09-08

申请号：US16422648

申请日：2019-05-24

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Simon Edward Willard ,  Alain Duvallet ,  Merlin Green ,  Sivakumar Kumarasamy

IPC分类号： H01L27/12 ,  H01L21/84 ,  H01L21/66 ,  H01L23/538 ,  H01L23/535 ,  H01L29/786 ,  H01L21/74

摘要： Systems, methods and apparatus for coexistence of high voltage and low voltage devices and circuits on a same integrated circuit fabricated in silicon-on-insulator (SOI) technology are described. In particular, techniques for mitigating back gate effects are described, including using of resistive and/or capacitive couplings to control surface potentials at regions of a substrate used for the SOI fabrication proximate the high voltage and low voltage devices and circuits. In one case, an N-type implant is used to provide a high potential differential with respect to a substrate potential.

公开(公告)号：US10348293B2

公开(公告)日：2019-07-09

申请号：US16011362

申请日：2018-06-18

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Merlin Green ,  Gary Chunshien Wu

IPC分类号： H03K17/284 ,  H02M1/38 ,  H03K17/082 ,  H02M3/158 ,  G05F1/00

摘要： Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.

公开(公告)号：US20200028501A1

公开(公告)日：2020-01-23

申请号：US16528279

申请日：2019-07-31

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Merlin Green

IPC分类号： H03K5/14 ,  H02M1/38 ,  H02M7/538 ,  H03K17/689 ,  H03K19/0185 ,  H03K5/1534

摘要： Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.

公开(公告)号：US20190140635A1

公开(公告)日：2019-05-09

申请号：US16011362

申请日：2018-06-18

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Merlin Green ,  Gary Chunshien Wu

IPC分类号： H03K17/284 ,  H03K17/082 ,  H02M1/38

CPC分类号： H03K17/284 ,  G05F1/00 ,  H02M1/08 ,  H02M1/38 ,  H02M3/158 ,  H03K17/08122 ,  H03K17/0822 ,  Y02B70/1466

摘要： Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion (e.g. DC/DC) and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. According to an aspect, timing control of edges of a control signal to the high voltage semiconductor devices is provided by a basic edge delay circuit that includes a transistor, a current source and a capacitor. An inverter can be selectively coupled, via a switch, to an input and/or an output of the basic edge delay circuit to allow for timing control of a rising edge or a falling edge of the control signal.

公开(公告)号：US10044347B2

公开(公告)日：2018-08-07

申请号：US15842753

申请日：2017-12-14

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Merlin Green

IPC分类号： H03K5/14 ,  H02M1/38 ,  H03K19/0185 ,  H03K17/689 ,  H02M7/538 ,  H03K5/1534 ,  H03K5/00

CPC分类号： H03K5/14 ,  H02M1/38 ,  H02M7/538 ,  H03K5/1534 ,  H03K17/689 ,  H03K19/018514 ,  H03K2005/00019

摘要： Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.

公开(公告)号：US10734982B2

公开(公告)日：2020-08-04

申请号：US16528279

申请日：2019-07-31

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Merlin Green

IPC分类号： H03K5/14 ,  H03K5/1534 ,  H03K17/689 ,  H03K19/0185 ,  H02M1/38 ,  H02M7/538 ,  H03K5/00

摘要： Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.

公开(公告)号：US10404245B2

公开(公告)日：2019-09-03

申请号：US16011490

申请日：2018-06-18

申请人： pSemi Corporation

发明人： Buddhika Abesingha ,  Merlin Green

IPC分类号： H03K5/14 ,  H03K5/1534 ,  H03K17/689 ,  H03K19/0185 ,  H02M1/38 ,  H02M7/538 ,  H03K5/00

摘要： Systems, methods, and apparatus for use in biasing and driving high voltage semiconductor devices using only low voltage transistors are described. The apparatus and method are adapted to control multiple high voltage semiconductor devices to enable high voltage power control, such as power amplifiers, power management and conversion and other applications wherein a first voltage is large compared to the maximum voltage handling of the low voltage control transistors. Timing of control signals can be adjusted via internal and/or external components so as to minimize shoot trough currents in the high voltage devices. A DC/DC power conversion implementation from high input voltage to low output voltage using a novel level shifter which uses only low voltage transistors is also provided. Also presented is a level shifter in which floating nodes and high voltage capacitive coupling and control enable the high voltage control with low voltage transistors.