公开(公告)号：US20140054797A1

公开(公告)日：2014-02-27

申请号：US13591990

申请日：2012-08-22

申请人： Zhiwei Gong (Tony) ,  Michael B. Vincent ,  Scott M. Hayes ,  Jason R. Wright

发明人： Zhiwei Gong (Tony) ,  Michael B. Vincent ,  Scott M. Hayes ,  Jason R. Wright

IPC分类号： H01L23/48 ,  H01L21/50 ,  H01L21/78

CPC分类号： H01L25/0657 ,  H01L21/4853 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L25/03 ,  H01L25/105 ,  H01L25/50 ,  H01L2225/06551 ,  H01L2225/1035 ,  H01L2225/1064 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

摘要： Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of stacked microelectronic packages. In one embodiment, the method includes producing a partially-completed stacked microelectronic package including a package body having a vertical package sidewall, a plurality microelectronic devices embedded within the package body, and package edge conductors electrically coupled to the plurality of microelectronic devices and extending to the vertical package sidewall. A flowable conductive material is applied on the vertical package sidewall and contacts the package edge conductors. Selected portions of the flowable conductive material are then removed to define, at least in part, electrically-isolated sidewall conductors electrically coupled to different ones of the package edge conductors.

摘要翻译： 提供了用于制造堆叠的微电子封装的方法的实施例，如堆叠的微电子封装的实施例。 在一个实施例中，该方法包括产生部分完成的叠层微电子封装，其包括具有垂直封装侧壁的封装体，嵌入封装主体内的多个微电子器件，以及电耦合到多个微电子器件的封装边缘导体， 垂直封装侧壁。 可流动的导电材料施加在垂直封装侧壁上，并与封装边缘导体接触。 然后去除可流动导电材料的选定部分，以至少部分地限定电隔离的侧壁导体，其电耦合到不同的封装边缘导体。

公开(公告)号：US20150115454A1

公开(公告)日：2015-04-30

申请号：US14067809

申请日：2013-10-30

申请人： Alan J. Magnus ,  Trung Q. Duong ,  Zhiwei Gong ,  Scott M. Hayes ,  Douglas G. Mitchell ,  Michael B. Vincent ,  Jason R. Wright ,  Weng F. Yap

发明人： Alan J. Magnus ,  Trung Q. Duong ,  Zhiwei Gong ,  Scott M. Hayes ,  Douglas G. Mitchell ,  Michael B. Vincent ,  Jason R. Wright ,  Weng F. Yap

IPC分类号： H01L23/00 ,  H01L21/768

CPC分类号： H01L24/97 ,  H01L21/568 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/19

摘要： Microelectronic packages having layered interconnect structures are provided, as are methods for the fabrication thereof. In one embodiment, the method includes forming a first plurality of interconnect lines in ohmic contact with a first bond pad row provided on a semiconductor. A dielectric layer is deposited over the first plurality of interconnect lines, the first bond pad row, and a second bond pad row adjacent the first bond pad row. A trench via is then formed in the dielectric layer to expose at least the second bond pad row therethrough. A second plurality of interconnect lines is formed in ohmic contact with the second bond pad row within the trench via. The second plurality of interconnect lines extends over the first bond pad row and is electrically isolated therefrom by the dielectric layer to produce at least a portion of the layered interconnect structure.

摘要翻译： 提供具有分层互连结构的微电子封装，以及制造它们的方法。 在一个实施例中，该方法包括形成与设置在半导体上的第一接合焊盘排欧姆接触的第一多个互连线。 介电层沉积在第一多个互连线上，第一接合焊盘行和与第一接合焊盘行相邻的第二接合焊盘排。 然后在电介质层中形成沟槽通孔，以至少暴露第二接合焊盘排。 第二多个互连线形成为与沟槽通孔内的第二接合焊盘排欧姆接触。 所述第二多个互连线延伸穿过所述第一接合焊盘行并且通过所述电介质层与其电隔离以产生所述分层互连结构的至少一部分。

公开(公告)号：US20140054783A1

公开(公告)日：2014-02-27

申请号：US13591924

申请日：2012-08-22

申请人： ZHIWEI GONG (Tony) ,  Michael B. Vincent ,  Scott M. Hayes ,  Jason R. Wright

发明人： ZHIWEI GONG (Tony) ,  Michael B. Vincent ,  Scott M. Hayes ,  Jason R. Wright

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L25/065 ,  H01L24/19 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

摘要： Methods for fabricating stacked microelectronic packages are provided, as are embodiments of a stacked microelectronic package. In one embodiment, the method includes arranging a plurality of microelectronic device panels in a panel stack. Each microelectronic device panel contains plurality of microelectronic devices and a plurality of package edge conductors extending therefrom. Trenches are created in the panel stack exposing the plurality of package edge conductors, and a plurality of sidewall conductors is formed interconnecting different ones of the package edge conductors exposed through the trenches. The panel stack is then separated into a plurality of stacked microelectronic packages each including at least two microelectronic devices electrically interconnected by at least one of the plurality of sidewall conductors included within the stacked microelectronic package.

摘要翻译： 提供了堆叠的微电子封装的制造方法，如堆叠的微电子封装的实施例。 在一个实施例中，该方法包括在面板堆叠中布置多个微电子器件面板。 每个微电子器件面板包含多个微电子器件和从其延伸的多个封装边缘导体。 在面板堆叠中产生暴露多个封装边缘导体的沟槽，并且形成多个侧壁导体，其互连通过沟槽暴露的不同封装边缘导体。 面板堆叠然后被分离成多个层叠的微电子封装，每个包含至少两个微电子器件，所述至少两个微电子器件由堆叠的微电子封装内的多个侧壁导体中的至少一个电气互连。

公开(公告)号：US09502363B2

公开(公告)日：2016-11-22

申请号：US14223805

申请日：2014-03-24

申请人： Michael B. Vincent ,  Trung Q. Duong ,  Zhiwei Gong ,  Scott M. Hayes ,  Alan J. Magnus ,  Douglas G. Mitchell ,  Eduard J. Pabst ,  Jason R. Wright ,  Weng F. Yap

发明人： Michael B. Vincent ,  Trung Q. Duong ,  Zhiwei Gong ,  Scott M. Hayes ,  Alan J. Magnus ,  Douglas G. Mitchell ,  Eduard J. Pabst ,  Jason R. Wright ,  Weng F. Yap

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L24/02 ,  H01L21/561 ,  H01L23/3128 ,  H01L23/564 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/02375 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13022 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/96 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014

摘要： Wafer level packages and methods for producing wafer level packages having delamination-resistant redistribution layers are provided. In one embodiment, the method includes building inner redistribution layers over a semiconductor die. Inner redistribution layers include a body of dielectric material containing metal routing features. A routing-free dielectric block is formed in the body of dielectric material and is uninterrupted by the metal routing features. An outer redistribution layer is produced over the inner redistribution layers and contains a metal plane, which is patterned to include one or more outgassing openings overlying the routing-free dielectric block. The routing-free dielectric block has a minimum width, length, and depth each at least twice the thickness of the outer redistribution layer.

摘要翻译： 提供了晶片级封装以及用于生产具有防分层再分配层的晶片级封装的方法。 在一个实施例中，该方法包括在半导体管芯上建立内部再分布层。 内部再分布层包括含有金属布线特征的绝缘材料体。 在电介质材料的主体中形成无路由的介质块，并且不被金属布线特征中断。 外再分布层在内再分布层上产生并且包含金属平面，其被图案化以包括覆盖无路由介质块的一个或多个除气开口。 无路由介质块具有最小宽度，长度和深度，每个至少两倍于外再分布层的厚度。

公开(公告)号：US09281293B2

公开(公告)日：2016-03-08

申请号：US14067809

申请日：2013-10-30

申请人： Alan J. Magnus ,  Trung Q. Duong ,  Zhiwei Gong ,  Scott M. Hayes ,  Douglas G. Mitchell ,  Michael B. Vincent ,  Jason R. Wright ,  Weng F. Yap

发明人： Alan J. Magnus ,  Trung Q. Duong ,  Zhiwei Gong ,  Scott M. Hayes ,  Douglas G. Mitchell ,  Michael B. Vincent ,  Jason R. Wright ,  Weng F. Yap

IPC分类号： H01L23/00 ,  H01L21/56

CPC分类号： H01L24/97 ,  H01L21/568 ,  H01L24/19 ,  H01L24/20 ,  H01L24/96 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/97 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/19

摘要： Microelectronic packages having layered interconnect structures are provided, as are methods for the fabrication thereof. In one embodiment, the method includes forming a first plurality of interconnect lines in ohmic contact with a first bond pad row provided on a semiconductor. A dielectric layer is deposited over the first plurality of interconnect lines, the first bond pad row, and a second bond pad row adjacent the first bond pad row. A trench via is then formed in the dielectric layer to expose at least the second bond pad row therethrough. A second plurality of interconnect lines is formed in ohmic contact with the second bond pad row within the trench via. The second plurality of interconnect lines extends over the first bond pad row and is electrically isolated therefrom by the dielectric layer to produce at least a portion of the layered interconnect structure.

摘要翻译： 提供具有分层互连结构的微电子封装，以及制造它们的方法。 在一个实施例中，该方法包括形成与设置在半导体上的第一接合焊盘排欧姆接触的第一多个互连线。 介电层沉积在第一多个互连线上，第一接合焊盘行和与第一接合焊盘行相邻的第二接合焊盘排。 然后在电介质层中形成沟槽通孔，以至少暴露第二接合焊盘排。 第二多个互连线形成为与沟槽通孔内的第二接合焊盘排欧姆接触。 所述第二多个互连线延伸穿过所述第一接合焊盘行并且通过所述电介质层与其电隔离以产生所述分层互连结构的至少一部分。

公开(公告)号：US09673150B2

公开(公告)日：2017-06-06

申请号：US14571878

申请日：2014-12-16

申请人： Zhiwei Gong ,  Scott M. Hayes ,  Michael B. Vincent

发明人： Zhiwei Gong ,  Scott M. Hayes ,  Michael B. Vincent

IPC分类号： H01L23/34 ,  H01L23/552 ,  H01L23/495 ,  H01L23/31 ,  H01L21/56 ,  H01L21/78 ,  H01L21/3205 ,  H01L23/00 ,  H01L23/498

CPC分类号： H01L23/552 ,  H01L21/3205 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49827 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05554 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/207 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015

摘要： An encapsulated semiconductor device package with an overlying conductive EMI or RFI shield in contact with an end of a grounded conductive component at a lateral side of the package, and methods of making the semiconductor device package.

公开(公告)号：US20160172309A1

公开(公告)日：2016-06-16

申请号：US14571878

申请日：2014-12-16

申请人： Zhiwei Gong ,  Scott M. Hayes ,  Michael B. Vincent

发明人： Zhiwei Gong ,  Scott M. Hayes ,  Michael B. Vincent

IPC分类号： H01L23/552 ,  H01L23/00 ,  H01L21/3205 ,  H01L21/56 ,  H01L21/78 ,  H01L23/495 ,  H01L23/31

CPC分类号： H01L23/552 ,  H01L21/3205 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3114 ,  H01L23/49524 ,  H01L23/49541 ,  H01L23/49827 ,  H01L24/32 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/05554 ,  H01L2224/12105 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/49109 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/19107 ,  H01L2924/207 ,  H01L2924/3025 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015

摘要： An encapsulated semiconductor device package with an overlying conductive EMI or RFI shield in contact with an end of a grounded conductive component at a lateral side of the package, and methods of making the semiconductor device package.

摘要翻译： 一种封装的半导体器件封装，其具有与封装的侧面处的接地导电部件的端部接触的上覆导电EMI或RFI屏蔽以及制造半导体器件封装的方法。

公开(公告)号：US09257415B2

公开(公告)日：2016-02-09

申请号：US14706359

申请日：2015-05-07

申请人： Michael B. Vincent ,  Scott M. Hayes ,  Jason R. Wright ,  Zhiwei Gong

发明人： Michael B. Vincent ,  Scott M. Hayes ,  Jason R. Wright ,  Zhiwei Gong

IPC分类号： H01L23/00 ,  H01L25/065 ,  H01L23/498 ,  H01L23/538 ,  H01L25/10 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48 ,  H01L25/00 ,  H01L25/03

CPC分类号： H01L25/0657 ,  H01L21/4853 ,  H01L21/561 ,  H01L23/3107 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49811 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/96 ,  H01L25/03 ,  H01L25/105 ,  H01L25/50 ,  H01L2225/06551 ,  H01L2225/1035 ,  H01L2225/1064 ,  H01L2924/12042 ,  H01L2924/1461 ,  H01L2924/00

摘要： Embodiments of a method for fabricating stacked microelectronic packages are provided, as are embodiments of stacked microelectronic packages. In one embodiment, the method includes producing a partially-completed stacked microelectronic package including a package body having a vertical package sidewall, a plurality microelectronic devices embedded within the package body, and package edge conductors electrically coupled to the plurality of microelectronic devices and extending to the vertical package sidewall. A flowable conductive material is applied on the vertical package sidewall and contacts the package edge conductors. Selected portions of the flowable conductive material are then removed to define, at least in part, electrically-isolated sidewall conductors electrically coupled to different ones of the package edge conductors.

公开(公告)号：US20140070415A1

公开(公告)日：2014-03-13

申请号：US13610488

申请日：2012-09-11

申请人： Michael B. Vincent ,  Zhiwei Gong (Tony) ,  Scott M. Hayes ,  Douglas Mitchell

发明人： Michael B. Vincent ,  Zhiwei Gong (Tony) ,  Scott M. Hayes ,  Douglas Mitchell

IPC分类号： H01L23/52 ,  H01L21/768 ,  H01L21/56

CPC分类号： H01L21/76816 ,  H01L21/76814 ,  H01L23/485 ,  H01L23/525 ,  H01L23/528 ,  H01L24/19 ,  H01L24/96 ,  H01L2224/0231 ,  H01L2224/02375 ,  H01L2224/04105 ,  H01L2924/12042 ,  H01L2924/00

摘要： Embodiments of a microelectronic package including at least one trench via are provided, as are embodiments of a method for fabricating such a microelectronic package. In one embodiment, the method includes the step of depositing a dielectric layer over a first microelectronic device having a plurality of contact pads, which are covered by the dielectric layer. A trench via is formed in the dielectric layer to expose the plurality of contact pads therethrough. The trench via is formed to include opposing crenulated sidewalls having a plurality of recesses therein. The plurality of contact pads exposed through the trench via are then sputter etched. A plurality of interconnect lines is formed over the dielectric layer, each of which is electrically coupled to a different one of the plurality of contact pads.

摘要翻译： 提供了包括至少一个沟槽通孔的微电子封装的实施例，如制造这种微电子封装的方法的实施例。 在一个实施例中，该方法包括在第一微电子器件上沉积介电层的步骤，该第一微电子器件具有被介电层覆盖的多个接触焊盘。 沟槽通孔形成在电介质层中以暴露多个接触焊盘。 沟槽通孔被形成为包括在其中具有多个凹部的相对的有齿的侧壁。 然后溅射蚀刻通过沟槽通孔暴露的多个接触焊盘。 多个互连线形成在电介质层上，每个互连线电耦合到多个接触焊盘中的不同的一个。

公开(公告)号：US08916421B2

公开(公告)日：2014-12-23

申请号：US13222148

申请日：2011-08-31

申请人： Zhiwei Gong ,  Navjot Chhabra ,  Glenn G. Daves ,  Scott M. Hayes

发明人： Zhiwei Gong ,  Navjot Chhabra ,  Glenn G. Daves ,  Scott M. Hayes

IPC分类号： H01L21/70 ,  H01L21/48 ,  H01L23/538 ,  H01L23/00 ,  H01L21/56

CPC分类号： H01L21/486 ,  H01L21/568 ,  H01L23/5389 ,  H01L24/19 ,  H01L24/20 ,  H01L24/97 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/97 ,  H01L2924/01012 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2224/19 ,  H01L2924/00

摘要： A semiconductor device package having pre-formed and placed through vias and a process for making such a package is provided. One or more signal conduits are coupled to a lead frame that is subsequently embedded in an encapsulated semiconductor device package. The free end of signal conduits is exposed while the other end remains coupled to a lead frame. The signal conduits are then used as through package vias, providing signal-bearing pathways between interconnects or contacts on the bottom and top of the package and the leads.

摘要翻译： 提供了一种通过通孔预先形成和放置的​​半导体器件封装以及用于制造这种封装的工艺。 一个或多个信号管道耦合到引线框架，引线框架随后嵌入在封装的半导体器件封装中。 信号管道的自由端被暴露，而另一端保持联接到引线框架。 然后，信号导管用作通过封装通孔，在封装的底部和顶部与引线之间的互连或接触之间提供信号承载通路。