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    Polishing liquid composition
    1.
    发明授权
    Polishing liquid composition 有权
    抛光液组成

    公开(公告)号：US07604751B2

    公开(公告)日：2009-10-20

    申请号：US11434074

    申请日：2006-05-16

    申请人： Yasuhiro Yoneda ,  Ryoichi Hashimoto ,  Toshiya Hagihara

    发明人： Yasuhiro Yoneda ,  Ryoichi Hashimoto ,  Toshiya Hagihara

    IPC分类号： H01L21/302

    CPC分类号： C09K13/06 ,  C09G1/02 ,  C23F3/00 ,  C23F3/04 ,  C23F3/06 ,  H01L21/31053 ,  H01L21/3212

    摘要： A polishing liquid composition is applicable as a means of forming embedded metal interconnections on a semiconductor substrate. In a surface to be polished comprising an insulating layer and a metal interconnection layer, the polishing liquid composition is capable of maintaining a polishing speed of the metal layer, of suppressing an etching speed, and of preventing dishing of the metal layer.

    摘要翻译： 抛光液组合物可用作在半导体衬底上形成嵌入金属互连的手段。 在包括绝缘层和金属互连层的待抛光表面中，抛光液组合物能够保持金属层的抛光速度，抑制蚀刻速度，并且防止金属层的凹陷。

    Polishing composition
    2.
    发明授权
    Polishing composition 有权
    抛光组成

    公开(公告)号：US07247082B2

    公开(公告)日：2007-07-24

    申请号：US11328149

    申请日：2006-01-10

    申请人： Hiroyuki Yoshida ,  Toshiya Hagihara ,  Ryoichi Hashimoto ,  Yasuhiro Yoneda

    发明人： Hiroyuki Yoshida ,  Toshiya Hagihara ,  Ryoichi Hashimoto ,  Yasuhiro Yoneda

    IPC分类号： C09K13/06

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    摘要： A polishing composition comprising an improver of a ratio of a polishing rate of an insulating film to that of a stopper film, wherein the polishing rate of the stopper film is selectively decreased, comprising one or more compounds selected from the group consisting of a monoamine or diamine compound; a polyamine having three or more amino groups in its molecule; an ether group-containing amine; and a heterocyclic compound having nitrogen atom. The polishing composition can be used for removing an insulating film which has been embedded for isolation into a trench formed on a silicon substrate and sedimented outside the trench, thereby planing a surface of the silicon substrate.

    摘要翻译： 1.一种抛光组合物，其特征在于，包括：绝缘膜的抛光速度与阻挡膜的研磨速度的比例的提高剂，其中所述阻挡膜的研磨速度选择性地降低，所述抛光组合物包含一种或多种选自以下的化合物：单胺或 二胺化合物; 在其分子中具有三个或更多个氨基的多胺; 含醚基的胺; 和具有氮原子的杂环化合物。 抛光组合物可以用于将已经嵌入以隔离的绝缘膜去除形成在硅衬底上的沟槽并沉淀在沟槽外部，从而平面化硅衬底的表面。

    Polishing composition
    3.
    发明授权
    Polishing composition 失效

    公开(公告)号：US07059941B2

    公开(公告)日：2006-06-13

    申请号：US10701606

    申请日：2003-11-06

    申请人： Hiroyuki Yoshida ,  Toshiya Hagihara ,  Ryoichi Hashimoto ,  Yasuhiro Yoneda

    发明人： Hiroyuki Yoshida ,  Toshiya Hagihara ,  Ryoichi Hashimoto ,  Yasuhiro Yoneda

    IPC分类号： C09K13/06

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    摘要： A polishing composition comprising an improver of a ratio of a polishing rate of an insulating film to that of a stopper film, wherein the polishing rate of the stopper film is selectively decreased, comprising one or more compounds selected from the group consisting of a monoamine or diamine compound; a polyamine having three or more amino groups in its molecule; an ether group-containing amine; and a heterocyclic compound having nitrogen atom. The polishing composition can be used for removing an insulating film which has been embedded for isolation into a trench formed on a silicon substrate and sedimented outside the trench, thereby planing a surface of the silicon substrate.

    Polishing composition
    4.
    发明申请
    Polishing composition 有权

    公开(公告)号：US20060117666A1

    公开(公告)日：2006-06-08

    申请号：US11328149

    申请日：2006-01-10

    申请人： Hiroyuki Yoshida ,  Toshiya Hagihara ,  Ryoichi Hashimoto ,  Yasuhiro Yoneda

    发明人： Hiroyuki Yoshida ,  Toshiya Hagihara ,  Ryoichi Hashimoto ,  Yasuhiro Yoneda

    IPC分类号： B24B7/30 ,  C09K3/14

    CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

    摘要： A polishing composition comprising an improver of a ratio of a polishing rate of an insulating film to that of a stopper film, wherein the polishing rate of the stopper film is selectively decreased, comprising one or more compounds selected from the group consisting of a monoamine or diamine compound; a polyamine having three or more amino groups in its molecule; an ether group-containing amine; and a heterocyclic compound having nitrogen atom. The polishing composition can be used for removing an insulating film which has been embedded for isolation into a trench formed on a silicon substrate and sedimented outside the trench, thereby planing a surface of the silicon substrate.

    Polishing composition
    7.
    发明授权
    Polishing composition 有权
    抛光组成

    公开(公告)号：US07303601B2

    公开(公告)日：2007-12-04

    申请号：US10727571

    申请日：2003-12-05

    申请人： Kenichi Suenaga ,  Yoshiaki Oshima ,  Toshiya Hagihara

    发明人： Kenichi Suenaga ,  Yoshiaki Oshima ,  Toshiya Hagihara

    IPC分类号： C09G1/02 ,  B24B1/00

    CPC分类号： C09G1/02 ,  C09K3/1409 ,  C09K3/1463

    摘要： A polishing composition for memory hard disk containing water and silica particles, wherein the silica particles have a particle size distribution in which the relationship of a particle size (R) and a cumulative volume frequency (V) in a graph of particle size-cumulative volume frequency obtained by plotting a cumulative volume frequency (%) of the silica particles counted from a small particle size side against a particle size (nm) of the silica particles in the range of particle sizes of from 40 to 100 nm satisfy the following formula (1): V≧0.5×R+40 (1), wherein the particle size is determined by observation with a transmission electron microscope (TEM). The polishing composition of the present invention can be even more suitably used for the manufacture of a substrate for precision parts such as substrates for memory hard disks.

    摘要翻译： 一种含有水和二氧化硅颗粒的记忆硬盘的抛光组合物，其中二氧化硅颗粒具有颗粒尺寸分布，其中颗粒尺寸累积体积（R）和累积体积频率（V） 通过绘制从小粒径侧计数的二氧化硅粒子的累积体积频率（％）与粒径为40〜100nm范围内的二氧化硅粒子的粒径（nm）的曲线图所得到的频率满足下式（ 1）：V> = 0.5×R + 40（1），其中通过用透射电子显微镜（TEM）观察确定粒径。 本发明的抛光组合物甚至可以更适合用于制造用于存储硬盘的基板的精密部件用基板。

    POLISHING COMPOSITION
    8.
    发明申请
    POLISHING COMPOSITION 审中-公开
    抛光组合物

    公开(公告)号：US20070167116A1

    公开(公告)日：2007-07-19

    申请号：US11692619

    申请日：2007-03-28

    申请人： Hiroyuki YOSHIDA ,  Yuichi Homma ,  Shigeaki Takashima ,  Toshiya Hagihara

    发明人： Hiroyuki YOSHIDA ,  Yuichi Homma ,  Shigeaki Takashima ,  Toshiya Hagihara

    IPC分类号： B24D3/02 ,  B24B7/30

    CPC分类号： C09G1/02 ,  B24B37/044 ,  C09K3/1436 ,  C09K3/1463

    摘要： The present invention relates to a polishing composition containing an aqueous medium and silica particles, wherein the silica particles in the polishing composition has a zeta potential of from −15 to 40 mV; a method for manufacturing a substrate including the step of polishing a substrate to be polished with a polishing composition containing an aqueous medium and silica particles, wherein the silica particles in the polishing composition has a zeta potential of from −15 to 40 mV; and a method for reducing scratches on a substrate to be polished with a polishing composition containing an aqueous medium and silica particles, including the step of adjusting a zeta potential of silica particles in the polishing composition to −15 to 40 mV. The polishing composition can be favorably used in polishing the substrate for precision parts, including substrates for magnetic recording media such as magnetic discs, optical discs and opto-magnetic discs; photomask substrates; optical lenses; optical mirrors; optical prisms; semiconductor substrates; and the like.

    摘要翻译： 本发明涉及含有水性介质和二氧化硅颗粒的抛光组合物，其中抛光组合物中的二氧化硅颗粒的ζ电位为-15至40mV; 一种基板的制造方法，其特征在于，包括使用含有水性介质和二氧化硅粒子的研磨用组合物研磨待研磨基板的工序，其中，研磨用组合物中的二氧化硅粒子的ζ电位为-15〜40mV， 以及包括将研磨用组合物中的二氧化硅粒子的ζ电位调整为-15〜40mV的步骤的减少含有水性介质和二氧化硅粒子的研磨用组合物的研磨用基板上的划痕的方法。 抛光组合物可以有利地用于抛光用于精密部件的基板，包括用于诸如磁盘，光盘和光磁盘的磁记录介质的基板; 光掩模基板; 光学镜片; 光学镜; 光学棱镜 半导体衬底; 等等。