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1.发明申请MULTI-STAGE PLASMA REACTOR SYSTEM WITH HOLLOW CATHODES FOR CRACKING CARBONACEOUS MATERIAL 有权多层等离子体反应器系统，用于破碎碳质材料的中空阴极公开(公告)号：US20150044106A1
公开(公告)日：2015-02-12
申请号：US14361616
申请日：2012-08-03
Applicant: Xuan Li , Binhang Yan , Changning Wu , Yi Cheng , Yi Guo
Inventor： Xuan Li , Binhang Yan , Changning Wu , Yi Cheng , Yi Guo
CPC classification number: B01J19/088 , B01J19/2415 , B01J2219/0809 , B01J2219/0869 , B01J2219/0871 , B01J2219/0894 , C10J3/00 , C10J3/485 , C10J3/721 , C10J3/78 , C10J3/84 , C10J2200/12 , C10J2300/093 , C10J2300/0946 , C10J2300/0959 , C10J2300/0976 , C10J2300/1238 , C10J2300/1807
Abstract: Disclosed is a multi-stage plasma reactor system with hollow cathodes for cracking carbonaceous material with each stage comprising: hollow cathodes and hollow anodes cooled by recycling cooling medium or refrigerant; working gas inlet(s); inlet(s) of carbonaceous material and carrier gas as feedstock; reaction tubes in connection with the anode or cathode, in addition, the reactor system also comprises: at least one inlet(s) of quench medium located lower portion of last one of the reaction tubes; and at least one outlet(s) of quenched products and gases located on bottom or lower portion of last one of the reaction tubes, wherein chambers are formed between the first hollow cathode or the hollow cathode used as the reaction tube of any stage and the anode so as to generate plasma gas and/or electric arc therein, generated plasma gas jet fully contacts and efficiently mixes with the carbonaceous material and carrier gas as feedstock and/or volatiles caused by pyrolysis within or nearby highest temperature region of the chambers, and pyrolysis of the carbonaceous material and/or gas-phase reaction of volatiles are occurred. The present reactor system has excellent energy efficiency and higher cracked products yield.
Abstract translation: 公开了一种具有用于裂化含碳材料的空心阴极的多级等离子体反应器系统，每级包括：通过循环冷却介质或制冷剂冷却的中空阴极和中空阳极; 工作气体入口; 碳质材料和载气作为原料的入口; 与阳极或阴极连接的反应管，此外，反应器系统还包括：位于反应管的最后一个的下部的至少一个骤冷介质入口; 以及位于最后一个反应管的底部或下部的至少一个淬火产物和气体出口，其中在用作任何阶段的反应管的第一空心阴极或中空阴极之间形成腔室， 阳极，以便在其中产生等离子体气体和/或电弧，所产生的等离子体气体射流完全接触并有效地与碳质材料和载体混合，作为由室内或附近的最高温度区域内或其附近的热解引起的原料和/或挥发物，以及 发生碳质材料的热解和/或挥发物的气相反应。 本反应器系统具有优异的能量效率和较高的裂化产物产率。
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2.发明授权Multi-stage plasma reactor system with hollow cathodes for cracking carbonaceous material 有权具有中空阴极的多级等离子体反应器系统用于裂化碳质材料公开(公告)号：US09393542B2
公开(公告)日：2016-07-19
申请号：US14361616
申请日：2012-08-03
Applicant: Xuan Li , Binhang Yan , Changning Wu , Yi Cheng , Yi Guo
Inventor： Xuan Li , Binhang Yan , Changning Wu , Yi Cheng , Yi Guo
CPC classification number: B01J19/088 , B01J19/2415 , B01J2219/0809 , B01J2219/0869 , B01J2219/0871 , B01J2219/0894 , C10J3/00 , C10J3/485 , C10J3/721 , C10J3/78 , C10J3/84 , C10J2200/12 , C10J2300/093 , C10J2300/0946 , C10J2300/0959 , C10J2300/0976 , C10J2300/1238 , C10J2300/1807
Abstract: Disclosed is a multi-stage plasma reactor system with hollow cathodes for cracking carbonaceous material with each stage comprising: hollow cathodes and hollow anodes cooled by recycling cooling medium or refrigerant; working gas inlet(s); inlet(s) of carbonaceous material and carrier gas as feedstock; reaction tubes in connection with the anode or cathode, in addition, the reactor system also comprises: at least one inlet(s) of quench medium located lower portion of last one of the reaction tubes; and at least one outlet(s) of quenched products and gases located on bottom or lower portion of last one of the reaction tubes, wherein chambers are formed between the first hollow cathode or the hollow cathode used as the reaction tube of any stage and the anode so as to generate plasma gas and/or electric arc therein, generated plasma gas jet fully contacts and efficiently mixes with the carbonaceous material and carrier gas as feedstock and/or volatiles caused by pyrolysis within or nearby highest temperature region of the chambers, and pyrolysis of the carbonaceous material and/or gas-phase reaction of volatiles are occurred. The present reactor system has excellent energy efficiency and higher cracked products yield.
Abstract translation: 公开了一种具有用于裂化含碳材料的空心阴极的多级等离子体反应器系统，每级包括：通过循环冷却介质或制冷剂冷却的中空阴极和中空阳极; 工作气体入口; 碳质材料和载气作为原料的入口; 与阳极或阴极连接的反应管，此外，反应器系统还包括：位于反应管的最后一个的下部的至少一个骤冷介质入口; 以及位于最后一个反应管的底部或下部的至少一个淬火产物和气体出口，其中在用作任何阶段的反应管的第一空心阴极或中空阴极之间形成腔室， 阳极，以便在其中产生等离子体气体和/或电弧，所产生的等离子体气体射流完全接触并有效地与碳质材料和载体混合，作为由室内或附近的最高温度区域内或其附近的热解引起的原料和/或挥发物，以及 发生碳质材料的热解和/或挥发物的气相反应。 本反应器系统具有优异的能量效率和较高的裂化产物产率。
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3.发明申请公开(公告)号：US20190222281A1
公开(公告)日：2019-07-18
申请号：US16189157
申请日：2018-11-13
Applicant: Alexander Sirotkin , Alexei Davydov , Andrey Chervyakov , Anthony Lee , Avik Sengupta , Bharat Shrestha , Candy Yiu , Chang Hong Shan , Dae Won Lee , Dawei Ying , Debdeep Chatterjee , Farid Adrangi , Gang Xiong , Geng Wu , Gregory Morozov , Hassan Ghozlan , Hong He , Honglei Miao , Hua Li , Jaemin Han , Jeongho Jeon , Jie Cui , Jing Zhu , Joey Chou , Joonbeom Kim , Joonyoung Cho , Kathiravetpillai Sivanesan , Lu Lu , May Wu , Naveen Palle , Puneet Jain , Qian Li , Richard C. Burbidge , Robert Zaus , Rui Huang , Satish Chandra Jha , Seau S. Lim , Sergey Panteleev , Song Noh , Yaser M. Fouad , Yi Guo , Yizhi Yao , Yongjun Kwak , Youn Hyoung Heo , Yuhan Zhou , Yujian Zhang , Yushu Zhang
Inventor： Alexander Sirotkin , Alexei Davydov , Andrey Chervyakov , Anthony Lee , Avik Sengupta , Bharat Shrestha , Candy Yiu , Chang Hong Shan , Dae Won Lee , Dawei Ying , Debdeep Chatterjee , Farid Adrangi , Gang Xiong , Geng Wu , Gregory Morozov , Hassan Ghozlan , Hong He , Honglei Miao , Hua Li , Jaemin Han , Jeongho Jeon , Jie Cui , Jing Zhu , Joey Chou , Joonbeom Kim , Joonyoung Cho , Kathiravetpillai Sivanesan , Lu Lu , May Wu , Naveen Palle , Puneet Jain , Qian Li , Richard C. Burbidge , Robert Zaus , Rui Huang , Satish Chandra Jha , Seau S. Lim , Sergey Panteleev , Song Noh , Yaser M. Fouad , Yi Guo , Yizhi Yao , Yongjun Kwak , Youn Hyoung Heo , Yuhan Zhou , Yujian Zhang , Yushu Zhang
Abstract: Embodiments of apparatus and methods for signaling for resource allocation and scheduling in 5G-NR integrated access and backhaul are generally described herein. In some embodiments, User Equipment configured for reporting a channel quality indicator (CQI) index in a channel state information (CSI) reference resource assumes a physical resource block (PRB) bundling size of two PRBs to derive the CQI index.
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4.发明申请公开(公告)号：US20190174576A1
公开(公告)日：2019-06-06
申请号：US16273728
申请日：2019-02-12
Applicant: Sudeep K. Palat , Seau S. Lim , Yi Guo
Inventor： Sudeep K. Palat , Seau S. Lim , Yi Guo
Abstract: Embodiments of a User Equipment (UE), Evolved Node-B (eNB) and methods of communication are generally described herein. The UE may receive a SystemInformationBlockType1 from an eNB. The UE may determine that the eNB supports Fifth Generation Core (5GC) operation if the SystemInformationBlockType1 message includes a plmn-Identity-5GC-r15 parameter. The UE may transmit a radio resource control (RRC) connection request message to establish an RRC connection. If it is determined that the eNB supports 5GC operation, and if the UE supports 5GC operation, the UE may encode the RRC connection request message in accordance with a default new radio packet data convergence protocol (NR PDCP) configuration; and may use NR PDCP for one or more subsequent messages.
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5.发明授权Method of polishing a substrate comprising polysilicon and at least one of silicon oxide and silicon nitride 有权抛光包括多晶硅和至少一种氧化硅和氮化硅的衬底的方法公开(公告)号：US08492277B2
公开(公告)日：2013-07-23
申请号：US12724721
申请日：2010-03-16
Applicant: Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
Inventor： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC: C03C15/00 , C03C25/68 , H01L21/302 , H01L21/461
CPC classification number: H01L21/31053 , C09G1/02
Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon and at least one of silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and an acyclic organosulfonic acid compound, wherein the acyclic organosulfonic acid compound has an acyclic hydrophobic portion having 6 to 30 carbon atoms and a nonionic acyclic hydrophilic portion having 10 to 300 carbon atoms; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the at least one of silicon oxide and silicon nitride is removed from the substrate.
Abstract translation: 提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅和氧化硅和氮化硅中的至少一种; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂 和无环有机磺酸化合物，其中所述无环有机磺酸化合物具有6至30个碳原子的无环疏水部分和具有10至300个碳原子的非离子非环状亲水部分; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中所述至少一种氧化硅和氮化硅中的至少一种从所述衬底去除。
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Patent Agency Ranking
公开(公告)号：US08435420B1
公开(公告)日：2013-05-07
申请号：US13283013
申请日：2011-10-27
Applicant: Yi Guo , Kancharla-Arun Kumar Reddy
Inventor： Yi Guo , Kancharla-Arun Kumar Reddy
CPC classification number: H01L21/3212 , C09G1/02 , C09K3/1463
Abstract: A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.
Abstract translation: 使用化学机械抛光组合物浓缩物的多次稀释来抛光衬底来提供具有沉积在氮化硅上的多晶硅覆盖层的衬底的化学机械抛光的方法，其中用于抛光衬底的浓缩物的第一稀释度被调谐到展现 第一多晶硅去除速率和第一多晶硅与氮化硅的去除速率选择性; 并且其中调整用于抛光所述衬底的所述浓缩物的第二稀释度以显示第二多晶硅去除速率和第二多晶硅与氮化硅去除速率选择性。
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公开(公告)号：US20130109182A1
公开(公告)日：2013-05-02
申请号：US13283013
申请日：2011-10-27
Applicant: Yi Guo , Kancharla-Arun Kumar Reddy
Inventor： Yi Guo , Kancharla-Arun Kumar Reddy
IPC: H01L21/306
CPC classification number: H01L21/3212 , C09G1/02 , C09K3/1463
Abstract: A process for chemical mechanical polishing of a substrate having a polysilicon overburden deposited over silicon nitride is provided using multiple dilutions of a chemical mechanical polishing composition concentrate to polish the substrate, wherein a first dilution of the concentrate used to polish the substrate is tuned to exhibit a first polysilicon removal rate and a first polysilicon to silicon nitride removal rate selectivity; and wherein a second dilution of the concentrate used to polish the substrate is tuned to exhibit a second polysilicon removal rate and a second polysilicon to silicon nitride removal rate selectivity.
Abstract translation: 使用化学机械抛光组合物浓缩物的多次稀释来抛光衬底来提供具有沉积在氮化硅上的多晶硅覆盖层的衬底的化学机械抛光的方法，其中用于抛光衬底的浓缩物的第一稀释度被调谐到展现 第一多晶硅去除速率和第一多晶硅与氮化硅的去除速率选择性; 并且其中调整用于抛光所述衬底的所述浓缩物的第二稀释度以显示第二多晶硅去除速率和第二多晶硅与氮化硅去除速率选择性。
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8.发明申请Chemical Mechanical Polishing Composition and Method For Polishing Germanium-Antimony-Tellurium Alloys 有权化学机械抛光组合物和抛光锗 - 锑 - 碲合金的方法公开(公告)号：US20120276742A1
公开(公告)日：2012-11-01
申请号：US13096740
申请日：2011-04-28
Applicant: Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
Inventor： Jaeseok Lee , Yi Guo , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC: H01L21/306
CPC classification number: C09K3/1463 , C09G1/02 , H01L45/06 , H01L45/144 , H01L45/1683
Abstract: A method for chemical mechanical polishing of a substrate comprising a germanium-antimony-tellurium chalcogenide phase change alloy (GST) using a chemical mechanical polishing composition consisting essentially of, as initial components: water; an abrasive; a material selected from ethylene diamine tetra acetic acid and salts thereof; and an oxidizing agent; wherein the chemical mechanical polishing composition facilitates a high GST removal rate with low defectivity.
Abstract translation: 一种使用化学机械抛光组合物进行化学机械抛光的方法，其包括锗 - 锑 - 碲硫族化物相变合金（GST），所述化学机械抛光组合物基本上由以下组分组成：初始组分：水; 研磨剂 选自乙二胺四乙酸及其盐的材料; 和氧化剂; 其中化学机械抛光组合物有利于具有低缺陷性的高GST去除速率。
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9.发明申请Method of chemical mechanical polishing a substrate with polishing composition adapted to enhance silicon oxide removal 有权用适于增强氧化硅去除的抛光组合物对衬底进行化学机械抛光的方法公开(公告)号：US20110244685A1
公开(公告)日：2011-10-06
申请号：US12750799
申请日：2010-03-31
Applicant: Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
Inventor： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC: H01L21/306
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463
Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises silicon oxide; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; and a substance according to formula I wherein R1, R2 and R3 are each independently selected from a C1-4 alky group; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein the substance according to formula I included in the chemical mechanical polishing composition provides an enhanced silicon oxide removal rate and an improved polishing defectivity performance; and, wherein at least some of the silicon oxide is removed from the substrate.
Abstract translation: 提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括氧化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂 和根据式I的物质，其中R 1，R 2和R 3各自独立地选自C 1-4烷基; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中包括在化学机械抛光组合物中的根据式I的物质提供增强的氧化硅去除速率和改善的抛光缺陷性能; 并且其中所述氧化硅中的至少一些从所述衬底去除。
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10.发明申请Method of polishing a substrate comprising polysilicon, silicon oxide and silicon nitride 有权抛光包括多晶硅，氧化硅和氮化硅的衬底的方法公开(公告)号：US20110230048A1
公开(公告)日：2011-09-22
申请号：US12724685
申请日：2010-03-16
Applicant: Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
Inventor： Yi Guo , Zhendong Liu , Kancharla-Arun Kumar Reddy , Guangyun Zhang
IPC: H01L21/306
CPC classification number: H01L21/31053 , C09G1/02 , C09K3/1463
Abstract: A method for chemical mechanical polishing of a substrate is provided, comprising: providing a substrate, wherein the substrate comprises polysilicon, silicon oxide and silicon nitride; providing a chemical mechanical polishing composition, comprising, as initial components: water; an abrasive; an alkyl aryl polyether sulfonate compound, wherein the alkyl aryl polyether sulfonate compound has a hydrophobic portion having an alkyl group bound to an aryl ring and a nonionic acyclic hydrophilic portion having 4 to 100 carbon atoms; and a substance according to formula I wherein each of R1, R2, R3, R4, R5, R6 and R7 is a bridging group having a formula —(CH2)n—, wherein n is an integer selected from 1 to 10; providing a chemical mechanical polishing pad with a polishing surface; moving the polishing surface relative to the substrate; dispensing the chemical mechanical polishing composition onto the polishing surface; and, abrading at least a portion of the substrate to polish the substrate; wherein at least some of the polysilicon is removed from the substrate; and, wherein at least some of the silicon oxide and silicon nitride is removed from the substrate.
Abstract translation: 提供了一种用于基板的化学机械抛光的方法，包括：提供基板，其中所述基板包括多晶硅，氧化硅和氮化硅; 提供化学机械抛光组合物，其包含作为初始组分的水; 研磨剂 烷基芳基聚醚磺酸盐化合物，其中烷基芳基聚醚磺酸盐化合物具有与芳环结合的烷基的疏水部分和具有4至100个碳原子的非离子非环状亲水部分; 和根据式I的物质，其中R1，R2，R3，R4，R5，R6和R7中的每一个是具有式 - （CH 2）n - 的桥连基团，其中n是选自1至10的整数; 提供具有抛光表面的化学机械抛光垫; 相对于衬底移动抛光表面; 将化学机械抛光组合物分配到抛光表面上; 并且研磨所述衬底的至少一部分以抛光所述衬底; 其中所述多晶硅中的至少一些从所述衬底移除; 并且其中从所述衬底去除所述氧化硅和氮化硅中的至少一些。
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