TFT ARRAY SUBSTRATE AND LCD PANEL

    公开(公告)号:US20210124206A1

    公开(公告)日:2021-04-29

    申请号:US16308483

    申请日:2018-09-27

    Abstract: The invention provides a TFT array substrate and LCD panel. the TFT array substrate comprises a first metal layer, a first interlayer insulating layer, a second metal layer, a second interlayer insulating layer and a third metal layer sequentially disposed above the substrate. The first, second and third metal layers comprise a plurality of first, second and third fanout lines in the fanout line area, respectively; two of the first, second, and third fanout lines are connected to the data lines, and the other is connected with the touch line; because the first interlayer insulating layer is disposed between the first and second fanout lines, and the second interlayer insulating layer is disposed between the third and second fanout lines, the first, second and third fanout lines can overlap, which can effectively reduce the fanout line area and help to achieve a narrow border.

    GOA circuit
    3.
    发明授权

    公开(公告)号:US10796656B1

    公开(公告)日:2020-10-06

    申请号:US16308813

    申请日:2018-09-27

    Abstract: The invention provides a GOA circuit. The first node control module of the GOA circuit provided by the invention comprises a tenth TFT, an eleventh TFT and a twelfth TFT of N-type TFTs, when the voltage of the first node is high, the gate-to-source voltage difference of the twelfth TFT is the threshold voltage thereof, so that the drain-source voltage difference of the eleventh TFT is also the threshold voltage of the twelfth TFT, thereby making the resistance between the drain of the tenth TFT and the first node is extremely large, which can avoid the impact of leakage current generated by the tenth TFT on the voltage of the first node when the noise and coupling in the second node occurs, and to ensure the normal output of the scan signal.

    Display panel and display device
    5.
    发明授权

    公开(公告)号:US10714509B2

    公开(公告)日:2020-07-14

    申请号:US15744615

    申请日:2017-12-21

    Abstract: The present disclosure provides a display panel including a display area and a non-display area, a base substrate, a plurality of thin film transistors, a plurality of touch signal lines, a first test signal line area, an array substrate row driving circuit, a second test signal line area, a ground line area and an insulating layer. The thin film transistor includes a gate, a gate insulating layer, a source and a drain. The non-display area includes a first side and a second side; the array substrate row driving circuit respectively forms a first gap and a second gap with the first test signal line area and the second test signal line area, an orthographic projection of the ground line area on the base substrate is in the projection of the second test signal line area in the base substrate. The present disclosure also provides a display device.

    Method for manufacturing display device

    公开(公告)号:US10146080B1

    公开(公告)日:2018-12-04

    申请号:US15738031

    申请日:2017-11-30

    Abstract: The present invention provides a method for manufacturing a display device includes providing an array substrate with a plurality of pixel unit areas formed on a surface thereof; defining a dividing line; dividing the pixel unit areas to a pixel calculating area, a predetermined displaying area, and a predetermined shielding area, and dividing the pixel calculating area to a first part and a second part by the dividing line; calculating areas of sub pixels according to light extraction efficiencies and effective light extraction areas of the sub pixels; forming a shielding layer according to the areas of the sub pixels.

    GOA CIRCUIT
    7.
    发明申请
    GOA CIRCUIT 审中-公开

    公开(公告)号:US20200320949A1

    公开(公告)日:2020-10-08

    申请号:US16308813

    申请日:2018-09-27

    Abstract: The invention provides a GOA circuit. The first node control module of the GOA circuit provided by the invention comprises a tenth TFT, an eleventh TFT and a twelfth TFT of N-type TFTs, when the voltage of the first node is high, the gate-to-source voltage difference of the twelfth TFT is the threshold voltage thereof, so that the drain-source voltage difference of the eleventh TFT is also the threshold voltage of the twelfth TFT, thereby making the resistance between the drain of the tenth TFT and the first node is extremely large, which can avoid the impact of leakage current generated by the tenth TFT on the voltage of the first node when the noise and coupling in the second node occurs, and to ensure the normal output of the scan signal.

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