Diamond diaphragm
    2.
    发明申请
    Diamond diaphragm 审中-公开
    金刚石隔膜

    公开(公告)号:US20070042185A1

    公开(公告)日:2007-02-22

    申请号:US11504645

    申请日:2006-08-16

    Abstract: A method for fabricating a diamond diaphragm is provided, wherein a non-homogeneous energy, generated by a hot wire, plasma, or flame, for activating and dissociating gas is provided to pass above a mold. Due to different distances between a curved surface of the mold and the non-homogeneous energy, different heating effects are produced on the surface of the mold. When the diamond material is coated and grows on the surface of the mold, the growth rate of the diamond material appears to be different by location, thus, the diamond diaphragm has a non-homogeneous vibration characteristic, and thereby having a response bandwidth wider than that of a diamond diaphragm with homogeneous vibration characteristic.

    Abstract translation: 提供一种用于制造金刚石膜片的方法,其中提供用于激活和解离气体的由热丝,等离子体或火焰产生的非均匀能量以通过模具上方。 由于模具的曲面与非均匀能量之间的距离不同,在模具表面产生不同的加热效果。 当金刚石材料被涂覆并在模具的表面上生长时,金刚石材料的生长速率似乎不同于位置,因此金刚石隔膜具有非均匀的振动特性,从而具有比 具有均匀振动特性的金刚石隔膜。

    Diamond substrate and method for fabricating the same
    3.
    发明授权
    Diamond substrate and method for fabricating the same 失效
    金刚石基板及其制造方法

    公开(公告)号:US07510906B2

    公开(公告)日:2009-03-31

    申请号:US11380356

    申请日:2006-04-26

    Abstract: A diamond substrate and a method for fabricating the same are provided wherein a SiC layer is formed on a lower surface of a diamond layer for preventing the diamond layer from being deformed after the process of forming the diamond substrate, and then a semiconductor layer is formed on the diamond layer or directly formed on the surface of the SiC layer. Thereby, the lattice mismatch between the diamond film layer and the semiconductor layer is mitigated by the SiC layer, and the crystalline quality of the semiconductor layer is improved, the fabricating process of the diamond substrate is simplified, and the performance and stability are enhanced.

    Abstract translation: 提供了一种金刚石基板及其制造方法,其中在金刚石层的下表面上形成SiC层,以防止金刚石层在形成金刚石基板的过程之后变形,然后形成半导体层 在金刚石层上或直接形成在SiC层的表面上。 因此,通过SiC层减轻了金刚石膜层和半导体层之间的晶格失配,提高了半导体层的结晶质量,简化了金刚石基板的制造工艺,提高了性能和稳定性。

    LED and method for making the same
    4.
    发明申请
    LED and method for making the same 审中-公开
    LED和制作相同的方法

    公开(公告)号:US20080142813A1

    公开(公告)日:2008-06-19

    申请号:US11984137

    申请日:2007-11-14

    CPC classification number: H01L33/0079

    Abstract: A light emitting diode device and a method for manufacturing the same are disclosed. The method comprises following steps: (A) providing a substrate; (B) forming a diamond layer on the surface of the substrate; (C) forming a doping region on the upper surface of the diamond layer; (D) bonding a semiconductor epitaxy layer on the upper surface of the diamond layer; and (E) removing the substrate. Accordingly, owing to the absence of an adhesion layer necessary for a conventional LED, the LED of the present invention can reduce the blockage for heat transfer caused by a resin adhesion layer and light obscuration caused by a metal adhesion layer so as to enhance the efficiency of heat dissipation of LEDs, simplify the process, and enhance the performance and the stability of products.

    Abstract translation: 公开了一种发光二极管装置及其制造方法。 该方法包括以下步骤:(A)提供衬底; (B)在所述基板的表面上形成金刚石层; (C)在金刚石层的上表面上形成掺杂区域; (D)在金刚石层的上表面上键合半导体外延层; 和(E)去除衬底。 因此,由于没有常规LED所需的粘合层,本发明的LED可以减少由树脂粘合层引起的热传递阻塞和由金属粘合层引起的光遮蔽,从而提高效率 LED散热,简化工艺,提高产品的性能和稳定性。

    Cutter wheel with surface modification and method for manufacturing the same
    5.
    发明申请
    Cutter wheel with surface modification and method for manufacturing the same 审中-公开
    具有表面改性的切割轮及其制造方法

    公开(公告)号:US20100000389A1

    公开(公告)日:2010-01-07

    申请号:US12292360

    申请日:2008-11-18

    Abstract: A cutter wheel is disclosed, which comprises a cutter wheel body, a cutting unit, and a solder layer. The cutter wheel body consists of the first substrate and the second substrate, wherein each substrate has an inner surface and an outer surface. The inner surface of the first substrate is treated with surface modification. The cutting unit can be formed on a rough surface. The solder layer is formed between the cutting unit and the second substrate. The present invention also provides a method for manufacturing the cutter wheel as mentioned above.

    Abstract translation: 公开了一种切割轮,其包括切割轮主体,切割单元和焊料层。 刀轮主体由第一基板和第二基板组成,其中每个基板具有内表面和外表面。 用表面改性处理第一衬底的内表面。 切割单元可以形成在粗糙的表面上。 焊料层形成在切割单元和第二基板之间。 本发明还提供如上所述的用于制造切割轮的方法。

    Chemical vapor deposition reactor
    6.
    发明申请
    Chemical vapor deposition reactor 审中-公开
    化学气相沉积反应器

    公开(公告)号:US20080035060A1

    公开(公告)日:2008-02-14

    申请号:US11594213

    申请日:2006-11-08

    CPC classification number: C23C16/44

    Abstract: A CVD (chemical vapor deposition) reactor having a vertical coating plane and power source-controlled hot filaments is disclosed. The CVD reactor has a chamber, one or a number of rotating electrodes, hot filaments, and a rotating power source at each rotating electrode. When the hot filaments expand due to hot, the rotating power source rotates the rotating electrode(s) to stretch the hot filaments and to further maintain the predetermined tension of the hot filaments, thereby preventing vibration of the hot filaments so as not to interfere with the performance of the coating work and not to damage the substrate upon flowing of a gas in the chamber.

    Abstract translation: 公开了具有垂直涂层平面和电源控制热丝的CVD(化学气相沉积)反应器。 CVD反应器具有室,一个或多个旋转电极,热丝,以及每个旋转电极处的旋转电源。 当热丝由于热而膨胀时,旋转电源使旋转电极旋转以拉伸热丝,并进一步保持热丝的预定张力,从而防止热丝的振动,从而不干扰 涂层的性能工作,并且不会在气体在室中流动时损坏基板。

    Chemical vapor deposition reactor
    7.
    发明申请
    Chemical vapor deposition reactor 审中-公开
    化学气相沉积反应器

    公开(公告)号:US20080035059A1

    公开(公告)日:2008-02-14

    申请号:US11544557

    申请日:2006-10-10

    CPC classification number: C23C16/44

    Abstract: A CVD (chemical vapor deposition) reactor having a horizontal coating plane and power source-controlled hot filaments is disclosed. The CVD reactor has a chamber, rotating electrodes provided inside the chamber, hot filaments connected to the rotating electrodes to form a horizontal coating plane above a substrate, and a rotating power source, which is controlled to rotate the rotating electrodes and to further stretch the hot filaments when the hot filaments expand due to a temperature change, prohibiting the hot filaments from touching the substrate.

    Abstract translation: 公开了具有水平涂层平面和电源控制热丝的CVD(化学气相沉积)反应器。 CVD反应器具有室,设置在室内的旋转电极,连接到旋转电极的热丝,以在基板上方形成水平涂层平面;以及旋转电源,其被控制以旋转旋转电极并进一步拉伸 热丝由于温度变化而膨胀,禁止热丝接触基底。

    Method for manufacturing diamond film
    8.
    发明授权
    Method for manufacturing diamond film 失效
    制造金刚石薄膜的方法

    公开(公告)号:US07435363B2

    公开(公告)日:2008-10-14

    申请号:US11427215

    申请日:2006-06-28

    Inventor: Hsiao-Kuo Chang

    CPC classification number: C23C16/01 C23C16/27

    Abstract: A method for manufacturing a diamond film is provided. The material with a low thermal decomposition point is used as a substrate. A buffer layer is formed on the substrate by coating or deposition, and then a diamond film is coated thereon, fitting the shape of the required diamond film. With the buffer layer, the coating or deposition uniformity of the diamond film is improved, and the problems such as thermal stress cracking and assembly damage are solved as well. During a subsequent process of forming the diamond film, the substrate is thermally decomposed due to a high temperature, such that the problems such as stripping and die loss are overcome.

    Abstract translation: 提供了制造金刚石膜的方法。 具有低热分解点的材料用作基底。 通过涂覆或沉积在衬底上形成缓冲层,然后在其上涂覆金刚石膜,使其适合所需金刚石膜的形状。 利用缓冲层,金刚石膜的涂层或沉积均匀性得到改善,也解决了热应力开裂和组装损坏等问题。 在形成金刚石薄膜的后续工艺中,由于高温,基板被热分解,从而克服了剥离和模具损耗等问题。

    LED and method for marking the same
    9.
    发明申请
    LED and method for marking the same 审中-公开
    LED和标记方法

    公开(公告)号:US20080142812A1

    公开(公告)日:2008-06-19

    申请号:US11984136

    申请日:2007-11-14

    CPC classification number: H01L33/007

    Abstract: A light emitting diode device and a method for manufacturing the same are disclosed. The method comprises following steps: (A) providing a substrate; (B) forming a SiC film on the surface of the substrate; (C) forming a diamond layer on the surface of the SiC film and removing the substrate, wherein the diamond layer has a first surface and a second surface adjacent to the surface of the SiC film; (D) forming a semiconductor epitaxy layer on the surface of SiC film by epitaxial growth process; and (E) forming a first electrode on the surface of the semiconductor epitaxy layer and forming a metal layer on the first surface of the diamond layer. Accordingly, the manufacturing method of the present invention can efficiently reduce manufacturing cost and simplify manufacturing process to provide LEDs with high heat dissipation efficiency and a high-quality epitaxy layer.

    Abstract translation: 公开了一种发光二极管装置及其制造方法。 该方法包括以下步骤:(A)提供衬底; (B)在所述基板的表面上形成SiC膜; (C)在所述SiC膜的表面上形成金刚石层并除去所述基板,其中所述金刚石层具有与所述SiC膜的表面相邻的第一表面和第二表面; (D)通过外延生长工艺在SiC膜的表面上形成半导体外延层; 和(E)在所述半导体外延层的表面上形成第一电极,并在所述金刚石层的第一表面上形成金属层。 因此,本发明的制造方法可以有效地降低制造成本并简化制造工艺,以提供具有高散热效率的LED和高质量的外延层。

    Chemical vapor deposition reactor that pre-heats applied gas and substrate before reaction
    10.
    发明申请
    Chemical vapor deposition reactor that pre-heats applied gas and substrate before reaction 审中-公开
    化学气相沉积反应器在反应前预加热气体和底物

    公开(公告)号:US20080047489A1

    公开(公告)日:2008-02-28

    申请号:US11595903

    申请日:2006-11-13

    CPC classification number: C23C16/509 C23C16/4557

    Abstract: A CVD (chemical vapor deposition) reactor is disclosed to include a reaction chamber, a gas heater, a substrate holder, a substrate heater, hot filaments, an electric field generator, and a magnetic field generator. By means of preheating applied gas with the gas heater and heating the substrate with the substrate holder and the hot filaments, the gas and substrate heating speed is accelerated, thereby saving much deposition time and greatly improving deposition efficiency. Matching with the electric field generator and the magnetic field generator, the ionization of applied gas in the reaction chamber is enhanced and, the uniformity of the thickness of deposition of metal substance on the surface of the substrate(s) is increased.

    Abstract translation: 公开了一种CVD(化学气相沉积)反应器,包括反应室,气体加热器,衬底保持器,衬底加热器,热丝,电场发生器和磁场发生器。 通过利用气体加热器对施加的气体进行预加热,并加热衬底和热丝,使气体和衬底加热速度加快,从而节省了大量沉积时间并大大提高了沉积效率。 与电场发生器和磁场发生器匹配,提高反应室中施加气体的离子化,并且提高金属物质在基片表面上的沉积厚度的均匀性。

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