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公开(公告)号：US20190157592A1
公开(公告)日：2019-05-23
申请号：US16254711
申请日：2019-01-23
Abstract: A method for manufacturing an organic thin film transistor includes steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with an organic solution and heating the graphene layer to form organic semiconductor nano lines on the surface of the graphene layer; and transferring the organic semiconductor nano lines to a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by the graphene layer. The semiconductor layer having organic thin film transistors is formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed simultaneously on the surface of the metal substrate with a large area.
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公开(公告)号：US20180337356A1
公开(公告)日：2018-11-22
申请号：US15544015
申请日：2017-04-28
CPC classification number: H01L51/0558 , H01L27/3274 , H01L51/0013 , H01L51/0045 , H01L51/0052
Abstract: The present application discloses a manufacturing method of an organic thin film transistor, comprising steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with organic solution and heating the graphene layer to form an organic semiconductor nano line on the surface of the graphene layer; and transferring the organic semiconductor nano line on a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by graphene layer. The semiconductor layer having organic thin film transistors are formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed at a time on the surface of the metal substrate with a large area.
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公开(公告)号：US20190088536A1
公开(公告)日：2019-03-21
申请号：US15536177
申请日：2017-04-25
Inventor： Wei WANG
IPC: H01L21/768 , H01L27/12 , H01L21/311 , H01L21/3213
CPC classification number: H01L21/76816 , H01L21/30608 , H01L21/3065 , H01L21/31111 , H01L21/31116 , H01L21/31144 , H01L21/32134 , H01L21/32135 , H01L21/84 , H01L27/1218 , H01L27/1255 , H01L27/1259 , H01L27/1288 , H01L2021/775 , H01L2221/101
Abstract: A control method for differentiated etching depth is provided. The method includes: providing a first etching stop pattern layer in a panel having stacked structure; adopting a first etchant to perform a first etching process to the panel such that a location of the panel provided with the first etching stop pattern layer forms a first etching depth, and forms a second etching depth at a location of the panel without providing the first etching stop pattern layer; through controlling an etching time, the second etching depth is deeper than a bottom of the first etching stop pattern layer; and adopting a second etchant to perform a second etching process to the panel in order to etch and remove the first etching stop pattern layer. In a same mask process, through changing the etchant, different depths are etched and formed to reduce the time consuming and decrease the production cost.
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公开(公告)号：US20180212096A1
公开(公告)日：2018-07-26
申请号：US15327133
申请日：2017-01-05
CPC classification number: H01L33/007 , H01L27/156 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/325 , H01L33/42
Abstract: The present disclosure proposes a micro LED and a method of forming the same. After a body of layers to structure a PN junction is formed sequentially on the outer wall of a buffer layer column, a first electrode is formed on the outer side of the body of layers that structured the PN junction. A second electrode is formed on the inner side of the body of layers that structured the PN junction after the buffer layer column is removed. The first electrode and second electrode are insulating to each other in areas outside of the body of layers structuring the PN junction. The micro LED formed is of a tube structure. The tube-structured micro LED can effectively lower the impedance imposed by the body of layers structuring the PN junction between the first and second electrodes, and thus enhance conductivity and illumination efficiency of the micro LED.
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5.发明申请公开(公告)号：US20180197926A1
公开(公告)日：2018-07-12
申请号：US15111230
申请日：2016-04-01
Inventor： Jhih-jie HUANG , Bo LIANG , Wei WANG
CPC classification number: H01L27/3244 , H01L51/0035 , H01L51/0097 , H01L51/5271 , H01L51/56 , H01L2227/323 , H01L2251/5323 , H01L2251/5338 , Y02E10/549
Abstract: The present application discloses a double sided organic light-emitting display apparatus, including: a rigid substrate; a transmission flexible substrate and a reflective flexible substrate formed on the rigid substrate; a display substrate having a plurality of switching elements formed on the transmission flexible substrate and the reflective flexible substrate; and a top-emission OLED light-emitting layer and a bottom-emission OLED light-emitting layer formed on the display substrate, wherein the top-emission OLED light-emitting layer is corresponding to the reflective flexible substrate and the bottom-emission OLED light-emitting layer is corresponding to the transmission flexible substrate. The present application also provides a method of manufacturing the OLED display apparatus. The OLED display apparatus can achieve the double sided display, and because of its use of the flexible substrate, it also has the advantage of ease of carrying and flexible property.
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Patent Agency Ranking
6.发明申请公开(公告)号：US20170323903A1
公开(公告)日：2017-11-09
申请号：US14909103
申请日：2015-12-30
Inventor： Wei WANG
IPC: H01L27/12 , H01L29/786 , G02F1/1343 , G02F1/1335 , G02F1/1368
CPC classification number: H01L27/127 , G02F1/133514 , G02F1/133516 , G02F1/134309 , G02F1/13439 , G02F1/1368 , G02F2201/50 , G02F2202/10 , H01L27/1225 , H01L29/66969 , H01L29/78606 , H01L29/78693
Abstract: A manufacturing method of an array substrate is provided in this invention, a protective layer for the channel is formed by magnetron sputtering and thermal annealing treatment with the oxygen concentration greater than 21%, at a temperature of 300˜400° C. and the material of the protection layer includes Al2O3. The present invention further includes an array substrate and a liquid crystal display panel with the array substrate. The present invention prevents the impurity such as hydrogen atom into the channel, and the quality of the protective layer prepared by the present invention is higher to ensure the electrical properties of the channel and process easy to be achieve and conducive to industrialization.
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公开(公告)号：US20200174311A1
公开(公告)日：2020-06-04
申请号：US16349261
申请日：2018-12-26
Inventor： Wei WANG
IPC: G02F1/1335
Abstract: The present invention provides a liquid crystal display panel and a manufacturing method of the liquid crystal display panel. The display panel includes a color filter substrate. The color filter substrate includes a color resist layer. The color resist layer includes a first color resist region and a second color resist region. The first color resist region is arranged corresponding to a display region. The second color resist region is arranged corresponding to a non-display region.
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公开(公告)号：US20190157593A1
公开(公告)日：2019-05-23
申请号：US16254742
申请日：2019-01-23
Abstract: A method for manufacturing an organic thin film transistor includes steps of: forming a graphene layer on a surface of a metal substrate; covering a surface of the graphene layer with an organic solution and heating the graphene layer to form organic semiconductor nano lines on the surface of the graphene layer; and transferring the organic semiconductor nano lines to a target substrate. The graphene layer is formed on the surface of the metal substrate in mass production. The organic semiconductor nano lines (monocrystalline semiconductor) are grown in mass production by the graphene layer. The semiconductor layer having organic thin film transistors is formed after transferring the organic semiconductor nano lines on the target substrate. A large amount of the organic semiconductor nano lines can be formed simultaneously on the surface of the metal substrate with a large area.
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9.发明申请公开(公告)号：US20180277376A1
公开(公告)日：2018-09-27
申请号：US15546711
申请日：2017-03-10
Inventor： Wei WANG
IPC: H01L21/30 , H01L27/12 , H01L49/02 , H01L29/786 , H01L29/66
CPC classification number: H01L21/3003 , H01L27/1222 , H01L27/1251 , H01L27/1255 , H01L27/1259 , H01L27/127 , H01L27/3244 , H01L27/3262 , H01L28/60 , H01L29/0615 , H01L29/0619 , H01L29/0623 , H01L29/66757 , H01L29/78675 , H01L51/0097 , H01L2251/5338
Abstract: The present application discloses a method for fabricating a thin film transistor including the steps of: sequentially forming an active layer, a gate insulating layer, a gate, and a capacitive insulating layer on a substrate, the gate insulating layer isolating the active layer from the gate; a hydrogen-blocking layer is formed on the side of the capacitive insulating layer facing away from the substrate, and the hydrogen-blocking layer covering the capacitive insulating layer; and performing hydrogenation treatment to the gate insulating layer and the active layer. The present application also discloses a thin film transistor and a display apparatus. In improving the flexibility of the AMOLED display apparatus while ensuring the hydrogenation effect of the polysilicon thin film transistor, the fabricated thin film transistor has high electron mobility, and the display apparatus has a good display performance.
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公开(公告)号：US20210404522A1
公开(公告)日：2021-12-30
申请号：US16470566
申请日：2019-02-25
Inventor： Wei WANG
Abstract: A carrying device and a fixing method of a carrying device are provided. The carrying device includes a body and an electromagnet fixing module disposed on the body; wherein the electromagnet fixing module is configured to fix the carrying device. The present application uses the electromagnet fixing module to fix the carrying device, which can avoid downtime of an exposure machine caused by shaking of the carrying device when a robot arm of the exposure machine picks or places the mask form the carrying device so as to improve throughput.
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