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公开(公告)号：US20240271040A1
公开(公告)日：2024-08-15
申请号：US18561030
申请日：2022-04-26
Applicant: Versum Materials US, LLC
Inventor： WEN DAR LIU , YI-CHIA LEE , AIPING WU
IPC: C09K13/08 , H01L21/306
CPC classification number: C09K13/08 , H01L21/30604
Abstract: The disclosed and claimed subject matter pertains to an etching solution including (i) water, (ii) at least one oxidizer, (iii) at least one fluoride ion source, (iv) at least one polyfunctional acid; (v) at least one corrosion inhibiting surfactant, (vi) at least one silane silicon oxide etch inhibitor and (vii) optionally at least one water-miscible organic solvent. The solutions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.
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公开(公告)号：US20220243150A1
公开(公告)日：2022-08-04
申请号：US17596199
申请日：2020-06-15
Applicant: Versum Materials US, LLC
Inventor： LILI WANG , AIPING WU , LAISHENG SUN , YI-CHIA LEE , YUANMEI CAO
Abstract: Compositions and methods useful for removing residue and photoresist from a semiconductor substrate comprising: from about 5 to about 60% by wt. of water; from about 10 to about 90% by wt. of a water-miscible organic solvent; from about 5 to about 90% by wt. of at least one alkanolamine; from about 0.05 to about 20% by wt. of at least one polyfunctional organic acid; and from about 0.1 to about 10% by wt. of at least one phenol-type corrosion inhibitor, wherein the composition is substantially free of hydroxylamine.
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公开(公告)号：US20240014036A1
公开(公告)日：2024-01-11
申请号：US18254477
申请日：2021-11-30
Applicant: VERSUM MATERIALS US, LLC
Inventor： RONALD M. PEARLSTEIN , XINJIAN LEI , ROBERT GORDON RIDGEWAY , AIPING WU , YI-CHIA LEE , SUMIT AGARWAL , ROHIT NARAYANAN KAVASSERY RAMESH , WANXING XU , RYAN JAMES GASVODA
IPC: H01L21/02
CPC classification number: H01L21/0228 , H01L21/02126 , H01L21/0214 , H01L21/02164 , H01L21/02274
Abstract: A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.
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公开(公告)号：US20220298182A1
公开(公告)日：2022-09-22
申请号：US17754165
申请日：2020-09-28
Applicant: Versum Materials US, LLC
Inventor： Jhih Kuei Ge , YI-CHIA LEE , WEN DAR LIU , AIPING WU , LAISHENG SUN
IPC: C07F9/06 , C07F7/08 , C09K13/06 , H01L21/02 , H01L21/311
Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.
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公开(公告)号：US20250002823A1
公开(公告)日：2025-01-02
申请号：US18708246
申请日：2022-11-30
Applicant: Versum Materials US, LLC
Inventor： YUANMEI CAO , LILI WANG , LAISHENG SUN , AIPING WU
Abstract: The disclosed and claimed compositions relate to stripper solutions for the removal of photoresists and etch residue that include a triazine (e.g., benzoguanamine) corrosion inhibitor.
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Patent Agency Ranking
公开(公告)号：US20240047196A1
公开(公告)日：2024-02-08
申请号：US18254467
申请日：2021-11-30
Applicant: VERSUM MATERIALS US, LLC
Inventor： RONALD M. PEARLSTEIN , XINJIAN LEI , ROBERT GORDON RIDGEWAY , AIPING WU , YI-CHIA LEE , SUMIT AGARWAL , ROHIT NARAYANAN KAVASSERY RAMESH , WANXING XU , RYAN JAMES GASVODA
IPC: H01L21/02 , C23C16/02 , C23C16/04 , C23C16/455
CPC classification number: H01L21/0228 , C23C16/0254 , C23C16/04 , C23C16/45525
Abstract: A selective thermal atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material than the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to the non-plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a silicon-containing dielectric film on the dielectric material.
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公开(公告)号：US20220380705A1
公开(公告)日：2022-12-01
申请号：US17753256
申请日：2020-09-24
Applicant: Versum Materials US, LLC
Inventor： LAISHENG SUN , LILI WANG , AIPING WU , YI-CHIA LEE , TIANNIU CHEN
Abstract: A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.
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公开(公告)号：US20220333044A1
公开(公告)日：2022-10-20
申请号：US17753529
申请日：2020-09-28
Applicant: Versum Materials US, LLC
Inventor： YUANMEI CAO , MICHAEL PHENIS , LILI WANG , LAISHENG SUN , AIPING WU
Abstract: Cleaning compositions and the method of using the same are disclosed, where the compositions include one or more alkanolamines, one or more ether alcohol solvents or aromatic containing alcohol, one or more corrosion inhibitors, and optionally one or more secondary solvents.
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公开(公告)号：US20220298417A1
公开(公告)日：2022-09-22
申请号：US17596078
申请日：2020-06-12
Applicant: Versum Materials US, LLC
Inventor： Wen Dar Liu , YI-CHIA LEE , CHUNG-YI CHANG , AIPING WU , LAISHENG SUN
IPC: C09K13/06 , H01L21/311 , H01L21/3213
Abstract: Described herein is an etching solution suitable for the selective removal of silicon over p-doped silicon and/or silicon-germanium from a microelectronic device, having water; at least one of NH4OH or a quaternary ammonium hydroxide; at least one compound selected from benzoquinone or a derivative of benzoquinone; quinoline or a derivative of quinoline; an unsubstituted or substituted C6-20 aliphatic acid; a C4-12 alkylamine; and a polyalkylenimine; optionally at least one water-miscible organic solvent; and optionally, at least one compound selected from an alkanolamine and a polyamine.
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公开(公告)号：US20220228062A1
公开(公告)日：2022-07-21
申请号：US17656828
申请日：2022-03-28
Applicant: Versum Materials US, LLC
Inventor： Jhih Kuei Ge , YI-CHIA LEE , WEN DAR LIU , AIPING WU , LAISHENG SUN
IPC: C09K13/06 , H01L21/311
Abstract: The disclosed and claimed subject matter is directed to an etching composition that includes (A) phosphoric acid and (B) a mixture that includes (i) a silicon-containing compound and (ii) an aqueous solvent. In some embodiments, the etching compositions include additional ingredients. The etching compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.
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