公开(公告)号：US20250014911A1

公开(公告)日：2025-01-09

申请号：US18708723

申请日：2022-11-04

Applicant: VERSUM MATERIALS US, LLC

Inventor： XIAOBO SHI ,  JOHN G LANGAN ,  MARK LEONARD O'NEILL ,  ROBERT VACASSY ,  JAMES A. SCHLUETER ,  ARA PHILIPOSSIAN ,  YASA SAMPURNO

IPC: H01L21/321 ,  B24B37/24 ,  C09G1/02 ,  H01L21/3105

Abstract: A single platen Chemical Mechanical Planarization (CMP) process using a novel pad-in-a-bottle (PIB) technology and PIB type CMP slurries for back-end CMP application is described to replace multiple (such as three) platens Chemical Mechanical Planarization (CMP) process for back-end CMP applications. The single platen with a single polishing pad is used for the whole back-end CMP process comprising metal bulk, metal soft landing, and metal barrier CMP.

公开(公告)号：US12163224B2

公开(公告)日：2024-12-10

申请号：US15764751

申请日：2016-10-06

Applicant: VERSUM MATERIALS US, LLC ,  BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM

Inventor： Xinjian Lei ,  Moo-Sung Kim ,  Anupama Mallikarjunan ,  Aaron Michael Dangerfield ,  Luis Fabián Peña ,  Yves Jean Chabal

IPC: C23C16/34 ,  C23C16/30 ,  C23C16/455

Abstract: Described herein are methods for forming a conformal Group 4, 5, 6, 13 metal or metalloid doped silicon nitride film. In one aspect, there is provided a method of forming an aluminum silicon nitride film comprising the steps of: providing a substrate in a reactor; introducing into the reactor an at least one aluminum precursor which reacts on at least a portion of the surface of the substrate to provide a chemisorbed layer; purging the reactor with a purge gas; introducing into the reactor an organoaminosilane precursors to react on at least a portion of the surface of the substrate to provide a chemisorbed layer; introducing a nitrogen source and an inert gas into the reactor to react with at least a portion of the chemisorbed layer; and optionally purge the reactor with an inert gas; and wherein the steps are repeated until a desired thickness of the aluminum nitride film is obtained.

公开(公告)号：US20240392434A1

公开(公告)日：2024-11-28

申请号：US18795937

申请日：2024-08-06

Applicant: Versum Materials US, LLC

Inventor： JIANHENG LI ,  XINJIAN LEI ,  ROBERT GORDON RIDGEWAY ,  RAYMOND NICHOLAS VRTIS ,  MANCHAO XIAO ,  RICHARD HO

IPC: C23C16/34 ,  C07F7/10 ,  C07F7/18 ,  C23C16/04 ,  C23C16/36 ,  C23C16/40 ,  C23C16/50

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.

公开(公告)号：US12110436B2

公开(公告)日：2024-10-08

申请号：US17756223

申请日：2020-09-30

Applicant: Versum Materials US, LLC

Inventor： Chung-Yi Chang ,  Wen Dar Liu ,  Yi-Chia Lee

IPC: C09K13/08 ,  C09K13/06 ,  H01L21/3213

CPC classification number: C09K13/08 ,  C09K13/06 ,  H01L21/32134

Abstract: The disclosed and claimed subject matter relates to wet etchants exhibiting high copper and cobalt etching rates where the etching rate ratio between the two metals can be varied. The wet etchants have a composition comprising a formulation consisting of: at least one alkanolamine having at least two carbon atoms, at least one amino substituent and at least one hydroxyl substituent with the amino and hydroxyl substituents attached to two different carbon atoms; at least one pH adjuster for adjusting the pH of the formulation to between approximately 9 and approximately 12; at least one chelating agent; and water.

公开(公告)号：US20240287257A1

公开(公告)日：2024-08-29

申请号：US18613569

申请日：2024-03-22

Applicant: Versum Materials US, LLC

Inventor： Manchao Xiao ,  Matthew R. MacDonald ,  Xinjian Lei ,  Meiliang Wang

IPC: C08G77/26 ,  C07F7/10 ,  C07F7/18 ,  C07F7/21 ,  C08G77/04 ,  C08G77/06 ,  C08L83/08 ,  C23C16/40 ,  C23C16/455

CPC classification number: C08G77/26 ,  C07F7/10 ,  C07F7/1888 ,  C07F7/21 ,  C08G77/045 ,  C08G77/06 ,  C08L83/08 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45553 ,  C08G2390/40

Abstract: Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

公开(公告)号：US20240271040A1

公开(公告)日：2024-08-15

申请号：US18561030

申请日：2022-04-26

Applicant: Versum Materials US, LLC

Inventor： WEN DAR LIU ,  YI-CHIA LEE ,  AIPING WU

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: The disclosed and claimed subject matter pertains to an etching solution including (i) water, (ii) at least one oxidizer, (iii) at least one fluoride ion source, (iv) at least one polyfunctional acid; (v) at least one corrosion inhibiting surfactant, (vi) at least one silane silicon oxide etch inhibitor and (vii) optionally at least one water-miscible organic solvent. The solutions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.

公开(公告)号：US20240247090A1

公开(公告)日：2024-07-25

申请号：US18558788

申请日：2022-05-16

Applicant: Versum Materials US, LLC

Inventor： Gregor Larbig ,  PEER KIRSCH ,  MATTHIAS STENDER ,  XIAOBO SHI

IPC: C08F226/06 ,  C08F212/14 ,  C08F220/34 ,  C08F220/56 ,  C08F220/58 ,  C09G1/02 ,  H01L21/321

CPC classification number: C08F226/06 ,  C08F212/26 ,  C08F220/34 ,  C08F220/56 ,  C08F220/58 ,  C09G1/02 ,  H01L21/3212

Abstract: Synthesis of imidazolium-based poly(ionic liquid)s is disclosed. Chemical Mechanical Planarization (CMP) slurries comprise abrasives; activator; oxidizing agent; additive comprising imidazolium-based poly(ionic liquid); and water. The use of the synthesized imidazolium-based poly(ionic liquid)s in the CMP slurries reduces dishing and erosion in highly selective tungsten slurries.

公开(公告)号：US11976740B2

公开(公告)日：2024-05-07

申请号：US17905247

申请日：2021-03-03

Applicant: VERSUM MATERIALS US, LLC

Inventor： Mason Seidl ,  Meredith Elaine Flickinger ,  Thomas William Piltz ,  Shawn S. Cable ,  David Ebeling ,  Charles Michael Birtcher

IPC: F16K27/02 ,  F16K11/04

CPC classification number: F16K27/0263 ,  F16K11/04

Abstract: A compact valve block for a chemical container wherein the coaxial valve block has a housing that can accommodate three valve control mechanisms thus allowing for quick and effective purging without the need for an additional external conduit, valves, and coaxial injector. The advantage is a greatly reduced amount of wetted surface area inside the valve block leading to a significant decrease in the time it takes to purge a system thus allowing for quicker times to change chemical containers.

公开(公告)号：US11946148B2

公开(公告)日：2024-04-02

申请号：US17416328

申请日：2020-01-10

Applicant: Versum Materials US, LLC

Inventor： Wen Dar Liu ,  Yi-Chia Lee

IPC: C23F11/06 ,  C23F1/32 ,  H01L21/02 ,  H01L21/3213

CPC classification number: C23F11/06 ,  C23F1/32 ,  H01L21/02068 ,  H01L21/32134

Abstract: Described herein is an etching solution suitable for the selective removal of TiSiN over hafnium oxide from a microelectronic device, which consists essentially of: water; at least one alkaline ammonium compound selected from the group consisting of ammonium hydroxide, a quaternary ammonium hydroxide, ammonium fluoride, and a quaternary ammonium fluoride; at least one peroxide compound; a water-miscible organic solvent; at least one nitrogen containing compound selected from the group consisting of a C4-12 alkylamine, a polyalkylenimine, and a polyamine; and optionally at least one chelating agent.

公开(公告)号：US20240010915A1

公开(公告)日：2024-01-11

申请号：US17905340

申请日：2021-03-02

Applicant: Versum Materials US, LLC

Inventor： CHAO-HSIANG CHEN ,  JHIH KUEI GE ,  YI-CHIA LEE ,  WEN DAR LIU

IPC: C09K13/08 ,  C23F1/26 ,  H01L21/311 ,  H01L21/3213

CPC classification number: C09K13/08 ,  C23F1/26 ,  H01L21/31111 ,  H01L21/32134

Abstract: Etching composition suitable for etching titanium nitride and molybdenum from a microelectronic device, which includes, consists essentially of, or consists of, in effective amounts: water; HNO3; optionally, at least one chloride ion source selected from the group of NH4Cl and HCl; a base selected from the group of an alkanolamine, NH4OH, a quaternary ammonium hydroxide, and mixtures thereof; optionally, at least one fluoride ion source; optionally, at least one heteroaromatic compound; and optionally, at least one water-miscible solvent selected from the group of diethylene glycol butyl ether, sulfolane, and propylene carbonate.