专利检索 ap:("Versum Materials US, LLC") AND inv:"TIANNIU CHEN" 第 1 页

1.

发明申请
Composition For Removing Etch Residues, Methods Of Using And Use Thereof 有权

公开(公告)号：US20220380705A1

公开(公告)日：2022-12-01

申请号：US17753256

申请日：2020-09-24

申请人： Versum Materials US, LLC

发明人： LAISHENG SUN , LILI WANG , AIPING WU , YI-CHIA LEE , TIANNIU CHEN

IPC分类号： C11D11/00 , G03F7/42 , C11D7/32 , C11D7/26 , C11D7/34

摘要： A method and cleaning composition for microelectronic devices or semiconductor substrates including at least one N alkanolamine; at least one hydroxylamine or derivatives of hydroxylamine or mixtures thereof; at least one polyfunctional organic acid with at least two carboxylic acid groups and water. The cleaning compositions can further include at least one corrosion inhibitor.