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    Conductive beam optics for reducing particles in ion implanter
    1.
    发明授权
    Conductive beam optics for reducing particles in ion implanter 有权

    公开(公告)号：US10714301B1

    公开(公告)日：2020-07-14

    申请号：US15901775

    申请日：2018-02-21

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Shengwu Chang ,  Frank Sinclair ,  Alexandre Likhanskii ,  Christopher Campbell ,  Robert C. Lindberg

    IPC: H01J37/05 ,  H01J37/31 ,  H01J37/317

    Abstract: Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

    DUAL STAGE SCANNER FOR ION BEAM CONTROL
    3.
    发明申请
    DUAL STAGE SCANNER FOR ION BEAM CONTROL 有权
    用于离子束控制的双级扫描仪

    公开(公告)号：US20150108361A1

    公开(公告)日：2015-04-23

    申请号：US14163833

    申请日：2014-01-24

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Kenneth H. Purser ,  Christopher Campbell ,  Frank Sinclair ,  Robert C. Lindberg ,  Joseph C. Olson

    IPC: H01J37/147

    CPC classification number: H01J37/1475 ,  H01J37/3171

    Abstract: An ion beam scanner includes a first scanner stage having a first opening to transmit an ion beam, the first scanner stage to generate, responsive to a first oscillating deflection signal, a first oscillating deflecting field within the first opening; a second scanner stage disposed downstream of the first scanner stage and having a second opening to transmit the ion beam, the second scanner stage to generate, responsive to a second oscillating deflection signal, a second oscillating deflecting field within the second opening that is opposite in direction to the first oscillating deflecting field, and a scan controller to synchronize the first oscillating deflection signal and second oscillating deflection signal to generate a plurality of ion trajectories when the scanned ion beam exits the second stage that define a common focal point.

    Abstract translation: 离子束扫描器包括具有第一开口以传输离子束的第一扫描仪台，所述第一扫描仪台响应第一振荡偏转信号产生第一开口内的第一振荡偏转场; 第二扫描台，其设置在所述第一扫描台的下游，并具有用于透射所述离子束的第二开口，所述第二扫描仪台响应于第二振荡偏转信号，产生所述第二开口内的第二振荡偏转场， 方向到第一振荡偏转场，以及扫描控制器，当扫描离子束离开定义公共焦点的第二阶段时，使第一振荡偏转信号和第二振荡偏转信号同步以产生多个离子轨迹。

    Ion source and a method for in-situ cleaning thereof
    5.
    发明授权
    Ion source and a method for in-situ cleaning thereof 有权
    离子源及其原位清洗方法

    公开(公告)号：US09142379B2

    公开(公告)日：2015-09-22

    申请号：US14326321

    申请日：2014-07-08

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Bon-Woong Koo ,  Christopher R. Campbell ,  Craig R. Chaney ,  Robert C. Lindberg ,  Wilhelm P. Platow ,  Alexander S. Perel

    IPC: H01J27/02 ,  H01J27/14 ,  H01J37/08 ,  H01J37/317 ,  H01J37/30

    CPC classification number: H01J27/022 ,  H01J27/02 ,  H01J27/14 ,  H01J37/08 ,  H01J37/3002 ,  H01J37/3171 ,  H01J2237/022 ,  H01J2237/31705

    Abstract: An ion source and method of cleaning are disclosed. One or more heating units are placed in close proximity to the inner volume of the ion source, so as to affect the temperature within the ion source. In one embodiment, one or more walls of the ion source have recesses into which heating units are inserted. In another embodiment, one or more walls of the ion source are constructed of a conducting circuit and an insulating layer. By utilizing heating units near the ion source, it is possible to develop new methods of cleaning the ion source. Cleaning gas is flowed into the ion source, where it is ionized, either by the cathode, as in normal operating mode, or by the heat generated by the heating units. The cleaning gas is able to remove residue from the walls of the ion source more effectively due to the elevated temperature.

    Abstract translation: 公开了一种离子源和清洁方法。 一个或多个加热单元放置在离离子源的内部体积附近，以便影响离子源内的温度。 在一个实施例中，离子源的一个或多个壁具有插入加热单元的凹部。 在另一个实施例中，离子源的一个或多个壁由导电电路和绝缘层构成。 通过利用离子源附近的加热单元，可以开发清洗离子源的新方法。 清洁气体流入离子源，其中它通过阴极，如在正常操作模式中，或通过加热单元产生的热量而被离子化。 由于升高的温度，清洁气体能够更有效地从离子源的壁去除残留物。

    Dual stage scanner for ion beam control
    6.
    发明授权
    Dual stage scanner for ion beam control 有权
    用于离子束控制的双级扫描仪

    公开(公告)号：US08993980B1

    公开(公告)日：2015-03-31

    申请号：US14163833

    申请日：2014-01-24

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Kenneth H. Purser ,  Christopher Campbell ,  Frank Sinclair ,  Robert C. Lindberg ,  Joseph C. Olson

    IPC: H01J37/147 ,  H01J37/317

    CPC classification number: H01J37/1475 ,  H01J37/3171

    Abstract: An ion beam scanner includes a first scanner stage having a first opening to transmit an ion beam, the first scanner stage to generate, responsive to a first oscillating deflection signal, a first oscillating deflecting field within the first opening; a second scanner stage disposed downstream of the first scanner stage and having a second opening to transmit the ion beam, the second scanner stage to generate, responsive to a second oscillating deflection signal, a second oscillating deflecting field within the second opening that is opposite in direction to the first oscillating deflecting field, and a scan controller to synchronize the first oscillating deflection signal and second oscillating deflection signal to generate a plurality of ion trajectories when the scanned ion beam exits the second stage that define a common focal point.

    Abstract translation: 离子束扫描器包括具有第一开口以传输离子束的第一扫描仪台，所述第一扫描仪台响应第一振荡偏转信号产生第一开口内的第一振荡偏转场; 第二扫描台，其设置在所述第一扫描台的下游，并具有用于透射所述离子束的第二开口，所述第二扫描仪台响应于第二振荡偏转信号，产生所述第二开口内的第二振荡偏转场， 方向到第一振荡偏转场，以及扫描控制器，当扫描离子束离开定义公共焦点的第二阶段时，使第一振荡偏转信号和第二振荡偏转信号同步以产生多个离子轨迹。

    Dual mode ion implanter
    7.
    发明授权
    Dual mode ion implanter 有权
    双模式离子注入机

    公开(公告)号：US08884244B1

    公开(公告)日：2014-11-11

    申请号：US14163814

    申请日：2014-01-24

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Kenneth H. Purser ,  Christopher Campbell ,  Frank Sinclair ,  Robert C. Lindberg ,  Joseph C. Olson

    IPC: H01J37/00 ,  H01J37/317 ,  H01J37/147

    CPC classification number: H01J37/3171 ,  H01J37/3023 ,  H01J2237/0455 ,  H01J2237/30483

    Abstract: A system for dual mode operation in an ion implanter may include a movable beam blocker to adjust beam width of an ion beam in a first direction perpendicular to a first local direction of propagation of the ion beam. The system may further include a scanner to scan the ion beam in a second direction perpendicular to a second local direction of propagation of the ion beam when in a first state and to transmit the ion beam unperturbed in a second state; and mode selector to send a set of signals to the movable beam blocker and to the scanner in order to adjust the width of the ion beam and state of the scanner in concert.

    Abstract translation: 用于离子注入机中的双模式操作的系统可以包括可移动束阻挡器，以在垂直于离子束的第一局部传播方向的第一方向上调节离子束的束宽度。 该系统可以进一步包括扫描仪，当处于第一状态时，扫描仪沿垂直于离子束的第二局部传播方向的第二方向扫描离子束，并且在第二状态下传输不受扰动的离子束; 以及模式选择器，用于向可移动光束阻挡器和扫描器发送一组信号，以便调整离子束的宽度和扫描仪的状态。

    CONDUCTIVE BEAM OPTIC CONTAINING INTERNAL HEATING ELEMENT
    8.
    发明申请
    CONDUCTIVE BEAM OPTIC CONTAINING INTERNAL HEATING ELEMENT 审中-公开

    公开(公告)号：US20190259560A1

    公开(公告)日：2019-08-22

    申请号：US15901778

    申请日：2018-02-21

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Shengwu Chang ,  Frank Sinclair ,  Alexandre Likhanskii ,  Christopher Campbell ,  Robert C. Lindberg ,  Eric D. Hermanson

    IPC: H01J37/05 ,  H01J37/317

    Abstract: Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.

    Apparatus to control an ion beam
    9.
    发明授权
    Apparatus to control an ion beam 有权
    用于控制离子束的装置

    公开(公告)号：US09029811B1

    公开(公告)日：2015-05-12

    申请号：US14163844

    申请日：2014-01-24

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Kenneth H. Purser ,  Christopher Campbell ,  Frank Sinclair ,  Robert C. Lindberg ,  Joseph C. Olson

    IPC: H01J37/317 ,  H01J37/14 ,  H01J37/147

    CPC classification number: H01J37/1475 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/30472

    Abstract: An apparatus to control an ion beam includes a scanner configured in an first state to scan the ion beam wherein the scanner outputs the ion beam as a diverging ion beam; a collimator configured to receive along a side of the collimator the diverging ion beam and to output the diverging ion beam as a collimated ion beam; a beam adjustment component that extends proximate the side of the collimator; and a controller configured to send a first signal when the scanner is in the first state to the beam adjustment component to adjust ion trajectories of the diverging ion beam from a first set of trajectories to a second set of trajectories.

    Abstract translation: 控制离子束的装置包括扫描器，其配置成第一状态以扫描离子束，其中扫描器输出离子束作为发散离子束; 准直器，被配置为沿着准直器的一侧接收发散的离子束并且将发散的离子束作为准直的离子束输出; 光束调节部件，其靠近准直仪的一侧延伸; 以及控制器，其被配置为当所述扫描仪处于所述第一状态时向所述光束调节部件发送第一信号，以将所述发散离子束的离子轨迹从第一组轨迹调整到第二组轨迹。

    APPARATUS TO CONTROL AN ION BEAM
    10.
    发明申请
    APPARATUS TO CONTROL AN ION BEAM 有权
    控制离子束的装置

    公开(公告)号：US20150108362A1

    公开(公告)日：2015-04-23

    申请号：US14163844

    申请日：2014-01-24

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Kenneth H. Purser ,  Christopher Campbell ,  Frank Sinclair ,  Robert C. Lindberg ,  Joseph C. Olson

    IPC: H01J37/147

    CPC classification number: H01J37/1475 ,  H01J37/317 ,  H01J37/3171 ,  H01J2237/30472

    Abstract: An apparatus to control an ion beam includes a scanner configured in an first state to scan the ion beam wherein the scanner outputs the ion beam as a diverging ion beam; a collimator configured to receive along a side of the collimator the diverging ion beam and to output the diverging ion beam as a collimated ion beam; a beam adjustment component that extends proximate the side of the collimator; and a controller configured to send a first signal when the scanner is in the first state to the beam adjustment component to adjust ion trajectories of the diverging ion beam from a first set of trajectories to a second set of trajectories.

    Abstract translation: 控制离子束的装置包括扫描器，其配置成第一状态以扫描离子束，其中扫描器输出离子束作为发散离子束; 准直器，被配置为沿着准直器的一侧接收发散的离子束并且将发散的离子束作为准直的离子束输出; 光束调节部件，其靠近准直仪的一侧延伸; 以及控制器，其被配置为当所述扫描仪处于所述第一状态时向所述光束调节部件发送第一信号，以将所述发散离子束的离子轨迹从第一组轨迹调整到第二组轨迹。

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